Z-RAM

Known as: Z RAM, ZRAM, Zero capacitor RAM 
Zero-capacitor (registered trademark, Z-RAM) is a dynamic random-access memory technology developed by Innovative Silicon (defunct) based on the… (More)
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Topic mentions per year

Topic mentions per year

1997-2017
02419972017

Papers overview

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2010
2010
Advanced floating body Z-RAM memory cells are studied. In particular, the scalability of the cells is investigated. First, a Z… (More)
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2010
2010
Vertical double gate floating body (FB) Z-RAM memory cell technology fabricated on a recess gate DRAM technology is presented… (More)
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2009
2009
In this paper, the performance of Zero capacitor RAM (Z-RAM<inf>&#x00AE;</inf>) devices, developed in a 45nm SOI CMOS technology… (More)
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2008
2008
Ultra-scaled Z-RAM cells based on MuGFETs are demonstrated for the first time. Effects of physical parameters such as channel… (More)
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Highly Cited
2007
Highly Cited
2007
A new generation of the single transistor floating body DRAM is introduced for the first time. The new memory is largely based on… (More)
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2007
2007
We consider the scaling of the capacitorless single-transistor [zero-capacitor RAM (Z-RAM)] dynamic RAM (DRAM) cells having… (More)
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2007
2007
With each new technology node the challenges of building a robust, scalable embedded memory grow. This trend drives higher… (More)
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2006
2006
The zero-capacitor (Z-RAMreg) floating body memory is a dynamic memory built on an SOI substrate. It differs from a DRAM cell in… (More)
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2006
2006
The operating characteristics and retention times of floating body cells and arrays using Z-RAM<sup>reg</sup> technology… (More)
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2005
2005
In this paper we experimentally study for the first time the retention characteristics of Z-RAM cells based on CMOS FinFET and… (More)
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