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Analysis and simulation of semiconductor devices
1. Introduction.- 1.1 The Goal of Modeling.- 1.2 The History of Numerical Device Modeling.- 1.3 References.- 2. Some Fundamental Properties.- 2.1 Poisson's Equation.- 2.2 Continuity Equations.- 2.3Expand
SIMON-A simulator for single-electron tunnel devices and circuits
This work discusses the essential problem of random background charge and present possible solutions of SIMON, a single electron tunnel device and circuit simulator that is based on a Monte Carlo method. Expand
A review of hydrodynamic and energy-transport models for semiconductor device simulation
A detailed review of various transport models proposed which account for the average carrier energy or temperature, highlighting the differences and similarities between the models, and shed some light on the critical issues associated with higher order transport models. Expand
A CMOS IC for portable EEG acquisition systems
This paper presents a monolithic low-power, low-noise analog front-end electroencephalogram (EEG) acquisition system. It draws only 500 /spl mu/A from a standard 9 V battery, making it suitable forExpand
Modeling of tunneling current and gate dielectric reliability for nonvolatile memory devices
We present a hierarchy of tunneling models suitable for the two- and three-dimensional simulation of logic and nonvolatile semiconductor memory devices. The crucial modeling topics areExpand
Physically based models of electromigration: From Black's equation to modern TCAD models
This work reviews several electromigration models, focusing on the most well known, continuum physically based models which have been suitable for comprehensive TCAD analysis. Expand
Analysis of split-drain MAGFETs
We present fully three-dimensional simulation results of two-drain and three-drain magnetic field-effect transistors (MAGFET), magnetic sensors based on metal-oxide-semiconductor field-effectExpand
Electron mobility model for strained-Si devices
Strained-Si material has emerged as a strong contender for developing transistors for next-generation electronics, because this material system offers superior transport properties. We suggest aExpand
A benchmark study of the Wigner Monte Carlo method
This paper extends the second approach to the Wigner equation for time-dependent simulations and presents a validation against a well-known benchmark model, the Schrödinger equation, demonstrating excellent quantitative agreement. Expand
Three-Dimensional Delaunay Mesh Generation Using a Modified Advancing Front Approach
A meshing method which uses an advancing front Delaunay algorithm which avoids the need for a temporary tetrahedralization of the convex hull and a later following segmentation step which is typical for commonly used methods. Expand