Skip to search formSkip to main content
You are currently offline. Some features of the site may not work correctly.

Floating body effect

The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on… Expand
Wikipedia

Related topics

Related topics

4 relations
Silicon on insulatorT-RAMTransistorZ-RAM

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Silicon-Based Floating-Body Synaptic Transistor With Frequency-Dependent Short- and Long-Term Memories
A new synaptic transistor was fabricated with two separated gates based on a FinFET structure in order to mimic short- and long… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
2011
2011
On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs
This letter systematically investigates the origin of gate-induced floating-body effect (GIFBE) in partially depleted silicon-on… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
Review
2011
Review
2011
Reliable Memory Cell Design for Environmental Radiation-Induced Failures in SRAM
In this chapter, current status of environmental radiation-induced failures in SRAM is introduced. Alpha ray-induced soft-error… Expand
  • table 6.1
  • table 6.2
  • figure 6.1
  • table 6.3
  • figure 6.2
2010
2010
Enhanced gate-induced floating-body effect in PD SOI MOSFET under external mechanical strain
The influence of tensile mechanical strain on gate-induced floating-body effect (GIFBE) in advanced partially depleted SOI n… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 5
  • figure 4
Highly Cited
2007
Highly Cited
2007
Improved Reliability by Reduction of Hot-Electron Damage in the Vertical Impact-Ionization MOSFET (I-MOS)
This letter presents experimental results and explanations on the reduced degradation caused by hot carriers of the vertical… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
Highly Cited
2007
Highly Cited
2007
A 31.3-dBm Bulk CMOS T/R Switch Using Stacked Transistors With Sub-Design-Rule Channel Length in Floated p-Wells
A 31.3-dBm 900-MHz bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB and isolation of… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 5
  • figure 4
2004
2004
Unusual floating body effect in fully depleted MOSFETs
The transconductance of fully depleted SOI MOSFETs may feature a sudden drop to zero. This surprising behavior, observed for low… Expand
  • figure 6
2004
2004
Modeling the floating-body effects of fully depleted, partially depleted, and body-grounded SOI MOSFETs
Abstract This paper describes a unified framework to model the floating-body effects of various SOI MOSFET operation modes… Expand
  • figure 1
  • figure 2
  • figure 3
  • figure 4
  • figure 5
2003
2003
Very low Schottky barrier to n-type silicon with PtEr-stack silicide
We investigate Er silicide formed on n-type silicon. In order to protect the Er from oxidation during the formation of Er… Expand
  • figure 2
  • figure 1
1997
1997
Correlation Between Low-frequency Noise Overshoot In SOI MOSFETs And Frequency Dependence Of Floating Body Effect
In this paper, a new mechanism is proposed to explain the well-known kink-related noise overshoot in SO1 MOSFETs. We found that… Expand
  • figure 4
  • table 1
  • figure 5
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy, Terms of Service, and Dataset License
ACCEPT & CONTINUE