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A new synaptic transistor was fabricated with two separated gates based on a FinFET structure in order to mimic short- and long… Expand This letter systematically investigates the origin of gate-induced floating-body effect (GIFBE) in partially depleted silicon-on… Expand In this chapter, current status of environmental radiation-induced failures in SRAM is introduced. Alpha ray-induced soft-error… Expand The influence of tensile mechanical strain on gate-induced floating-body effect (GIFBE) in advanced partially depleted SOI n… Expand This letter presents experimental results and explanations on the reduced degradation caused by hot carriers of the vertical… Expand A 31.3-dBm 900-MHz bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB and isolation of… Expand The transconductance of fully depleted SOI MOSFETs may feature a sudden drop to zero. This surprising behavior, observed for low… Expand Abstract This paper describes a unified framework to model the floating-body effects of various SOI MOSFET operation modes… Expand We investigate Er silicide formed on n-type silicon. In order to protect the Er from oxidation during the formation of Er… Expand In this paper, a new mechanism is proposed to explain the well-known kink-related noise overshoot in SO1 MOSFETs. We found that… Expand