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Floating body effect

The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on… 
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Related topics

Related topics

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Silicon on insulatorT-RAMTransistorZ-RAM

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology
In this paper, the effect of floating body effect(FBE) on a single event transient generation mechanism in fully depleted(FD… 
2013
2013
Study of Floating Body Effect in SOI Technology
The paper presents the floating body effects of PD/FD of SOI technology and also discusses the issues behind the effects, gives… 
2011
2011
Body-contact self-bias effect in partially depleted SOI-CMOS and alternatives to suppress floating body effect
As SOI-CMOS technology nodes reach the tens of nanometer regime,body-contacts become more and more ineffective to suppress the… 
2010
2010
Modeling of Gate Leakage, Floating Body Effect, and History Effect in 32nm HKMG PD-SOI CMOS
The High-K Metal Gate (HKMG) technology has become the keystone to reduce gate leakage and enable the continuous scaling of… 
2009
2009
Investigation of the Gate Length and Drain Bias Dependence of the ZTC Biasing Point Instability of N- and P-Channel PD SOI MOSFETs
This paper presents an analysis of the instability of the Zero Temperature Coefficient (ZTC) as a function of the gate length and… 
2008
2008
Modeling of Floating-Body Devices Based on Complete Potential Description
Advanced MOSFETs exploit the carrier confinement to suppress the short-channel effect, which is realized by reducing the bulk… 
2005
2005
Further insight into the physics and modeling of floating-body capacitorless DRAMs
In this paper, we report on parasitic bipolar conduction occurring in floating-body effect based capacitor-less DRAMs. A way to… 
2003
2003
Reduction of pass-gate leakage by silicon-thickness thinning in double-gate MOSFETs
This paper shows the reduction of Pass-Gate Leakage (PGL) by silicon-thickness thinning in Double-Gate (DG) MOSFET. The PGL… 
Review
2003
Review
2003
Future trends in SOI devices
We review briefly here a history of SOI development in Motorola and several substrate issues on which these novel devices are to… 
2002
2002
Development of floating body effect in SOI MOSFET's
Because of the buried oxide in the sil icon -on -insulator(SOI )MOSFET,it is inevitable to introduce floating body effect(FBE… 
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