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Floating body effect

The floating body effect is the effect of dependence of the body potential of a transistor realized by the silicon on insulator (SOI) technology on… Expand
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Papers overview

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2016
2016
A new synaptic transistor was fabricated with two separated gates based on a FinFET structure in order to mimic short- and long… Expand
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2011
2011
This letter systematically investigates the origin of gate-induced floating-body effect (GIFBE) in partially depleted silicon-on… Expand
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Review
2011
Review
2011
In this chapter, current status of environmental radiation-induced failures in SRAM is introduced. Alpha ray-induced soft-error… Expand
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2010
2010
The influence of tensile mechanical strain on gate-induced floating-body effect (GIFBE) in advanced partially depleted SOI n… Expand
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Highly Cited
2007
Highly Cited
2007
This letter presents experimental results and explanations on the reduced degradation caused by hot carriers of the vertical… Expand
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Highly Cited
2007
Highly Cited
2007
A 31.3-dBm 900-MHz bulk CMOS T/R switch with transmit (TX) and receive (RX) insertion losses of 0.5 and 1.0 dB and isolation of… Expand
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2004
2004
The transconductance of fully depleted SOI MOSFETs may feature a sudden drop to zero. This surprising behavior, observed for low… Expand
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2004
2004
Abstract This paper describes a unified framework to model the floating-body effects of various SOI MOSFET operation modes… Expand
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2003
2003
We investigate Er silicide formed on n-type silicon. In order to protect the Er from oxidation during the formation of Er… Expand
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1997
1997
In this paper, a new mechanism is proposed to explain the well-known kink-related noise overshoot in SO1 MOSFETs. We found that… Expand
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