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Silicon on insulator
Known as:
Semiconductor on Insulator
, SOI device
, Buried Oxide
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Silicon on insulator (SOI) technology refers to the use of a layered silicon–insulator–silicon substrate in place of conventional silicon substrates…
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Related topics
Related topics
50 relations
A-RAM
AMD 10h
Broadway (microprocessor)
Bulldozer (microarchitecture)
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2012
Highly Cited
2012
Spin-polarized (001) surface states of the topological crystalline insulator Pb0.73Sn0.27Se
B. M. Wojek
,
R. Buczko
,
+9 authors
O. Tjernberg
2012
Corpus ID: 118722550
We study the nature of (001) surface states in Pb0.73Sn0.27Se in the newly discovered topological-crystalline-insulator (TCI…
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2007
2007
A 500MHz Random Cycle 1.5ns-Latency, SOI Embedded DRAM Macro Featuring a 3T Micro Sense Amplifier
J. Barth
,
W. Reohr
,
+14 authors
S. Iyer
IEEE International Solid-State Circuits…
2007
Corpus ID: 19313098
A prototype SOI embedded DRAM macro is developed for high-performance microprocessors and introduces performance-enhancing 3T…
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Highly Cited
2005
Highly Cited
2005
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
W. Lee
,
A. Waite
,
+76 authors
N. Kepler
IEEE InternationalElectron Devices Meeting…
2005
Corpus ID: 22372112
A high performance 65 nm SOI CMOS technology is presented. Dual stress liner (DSL), embedded SiGe, and stress memorization…
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Highly Cited
2004
Highly Cited
2004
High inversion current in silicon nanowire field effect transistors
S. Koo
,
A. Fujiwara
,
Jinhua Han
,
E. Vogel
,
C. Richter
,
J. Bonevich
2004
Corpus ID: 55263936
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional…
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2003
2003
Performance advantage of Schottky source/drain in ultrathin-body silicon-on-insulator and dual-gate CMOS
D. Connelly
,
C. Faulkner
,
D. Grupp
2003
Corpus ID: 54070473
Here, for the first time, advanced simulation models are used to investigate the performance advantage of Schottky source/drain…
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2002
2002
A direct-conversion single-chip radio-modem for Bluetooth
G. Chang
,
Lars C. Jansson
,
+8 authors
S. V. Kishore
IEEE International Solid-State Circuits…
2002
Corpus ID: 29637972
A fully-integrated radio-modem using a direct-conversion receiver architecture achieves -83 dBm sensitivity at 0.1% BER, +40 dBm…
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1999
1999
Jacqueline Authier-Revuz, Ces mots qui ne vont pas de soi. Boucles réflexives et non-coincidence du dire, Paris, Larousse, 1995
M. Perret
1999
Corpus ID: 124187234
Highly Cited
1993
Highly Cited
1993
Superconducting millimeter wave oscillators and SIS mixers integrated on a chip
V. Koshelets
,
A. Shchukin
,
S. Shitov
,
L. Filippenko
IEEE transactions on applied superconductivity
1993
Corpus ID: 22518351
All-refractory material superconducting millimeter-wave oscillators have been designed and investigated experimentally with…
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1986
1986
Soi funa Finnish coniferous forest
V. Huhta
,
R. Hyvonen
,
+5 authors
P. Vilkamaa
1986
Corpus ID: 88583302
Highly Cited
1985
Highly Cited
1985
A Charge-Based Large-Signal Model for Thin-Film SOI MOSFET's
Hyung Kyu Lim
,
J. Fossum
IEEE Journal of Solid-State Circuits
1985
Corpus ID: 47561347
A charge-based large-signal model for thin-film SOI(Si-on-SiO/sub 2/) MOSFET's, intended for computer simulation of transient…
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