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Silicon on insulator

Known as: Semiconductor on Insulator, SOI device, Buried Oxide 
Silicon on insulator (SOI) technology refers to the use of a layered silicon–insulator–silicon substrate in place of conventional silicon substrates… 
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Related topics

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A-RAMAMD 10hBroadway (microprocessor)Bulldozer (microarchitecture)

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2013
Highly Cited
2013
Understanding the effect of PCB layout on circuit performance in a high frequency gallium nitride based point of load converter
The introduction of enhancement mode gallium nitride based power devices such as the eGaN®FET offers the potential to achieve… 
Highly Cited
2006
Highly Cited
2006
Memory effect of a polymer thin-film transistor with self-assembled gold nanoparticles in the gate dielectric
A self-assembled film of gold nanoparticles is integrated into the gate dielectric of an organic thin-film transistor to produce… 
Highly Cited
1998
Highly Cited
1998
CMOS VLSI engineering: silicon-on-insulator (SOI)
1. Introduction. 2. SOI CMOS Technology. 3. SOI CMOS Circuits. 4. SOI CMOS Devices - Basic. 5. SOI CMOS Devices - Advanced. 6… 
Highly Cited
1997
Highly Cited
1997
An 80-Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs
We report on an 80-Gbit/s 2:1 selector-type multiplexer IC using InAlAs/InGaAs/InP HEMTs incorporating a high-speed double layer… 
Highly Cited
1997
Highly Cited
1997
CMOS devices below 0.1 /spl mu/m: how high will performance go?
  • Yuan TaurE. Nowak
  • International Electron Devices Meeting. IEDM…
  • 1997
  • Corpus ID: 35663536
Issues, challenges, and potential directions for further performance gains beyond 0.1 /spl mu/m CMOS are explored. Gate oxide… 
Highly Cited
1992
Highly Cited
1992
Point-contact pseudo-MOSFET for in-situ characterization of as-grown silicon-on-insulator wafers
A pseudo-MOS transistor can be activated in as-grown silicon-on-insulator (SOI) structures without any device processing by using… 
Highly Cited
1987
Highly Cited
1987
An SOI voltage-controlled bipolar-MOS device
This paper describes a new operation mode of the SOI MOSFET. Connecting the floating substrate to the gate in a short-channel SOI… 
Highly Cited
1987
Highly Cited
1987
Hot-electron effects in Silicon-on-insulator n-channel MOSFET's
Hot-electron degradation has been measured in short-channel bulk and SOI MOSFET's. The presence of a floating substrate in the… 
Highly Cited
1983
Highly Cited
1983
Effects of grain boundaries on the channel conductance of SOl MOSFET's
A physical model that describes the effects of grain boundaries on the linear-region (strong-inversion) channel conductance of… 
Highly Cited
1980
Highly Cited
1980
Flashover Performance of Artificially Contaminated and ICED Long-Rod Transmission Line Insulators
The 60 Hz flashover performance of 230 kV and 500 kV long-rod polymer insulators is compared to standard ceramic suspension… 
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