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Silicon on insulator

Known as: Semiconductor on Insulator, SOI device, Buried Oxide 
Silicon on insulator (SOI) technology refers to the use of a layered silicon–insulator–silicon substrate in place of conventional silicon substrates… 
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Papers overview

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Highly Cited
2013
Highly Cited
2013
The introduction of enhancement mode gallium nitride based power devices such as the eGaN®FET offers the potential to achieve… 
Highly Cited
2013
Highly Cited
2013
UTBB FD-SOI technology has become mainstream within STMicroelectronics, with the objective to serve a wide spectrum of mobile… 
Highly Cited
2006
Highly Cited
2006
The floating-point unit (FPU) in the synergistic processor element (SPE) of a CELL processor is a fully pipelined 4-way single… 
Highly Cited
2004
Highly Cited
2004
We report simultaneous lateral growth of a high density of highly oriented, metal-catalyzed silicon nanowires on a patterned… 
Highly Cited
2004
Highly Cited
2004
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional… 
Highly Cited
2003
Highly Cited
2003
The subthreshold swing and threshold voltage characteristics of multiple-gate SOI transistors have been numerically simulated… 
Highly Cited
1998
Highly Cited
1998
This paper explores the limit of bulk (or partially-depleted SOI) CMOS scaling. A feasible design for 25 nm (channel length) CMOS… 
Highly Cited
1987
Highly Cited
1987
This paper describes a new operation mode of the SOI MOSFET. Connecting the floating substrate to the gate in a short-channel SOI… 
Highly Cited
1987
Highly Cited
1987
Hot-electron degradation has been measured in short-channel bulk and SOI MOSFET's. The presence of a floating substrate in the… 
Highly Cited
1983
Highly Cited
1983
A physical model that describes the effects of grain boundaries on the linear-region (strong-inversion) channel conductance of…