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Tungsten disilicide

Known as: Tungsten silicide, Tungsten(IV) silicide, WSi2 
Tungsten silicide (WSi2) is an inorganic compound, a silicide of tungsten. It is an electrically conductive ceramic material.
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Related topics

Related topics

4 relations
Chemical vapor depositionMicroelectromechanical systemsMolybdenum disilicidePlasma etching

Papers overview

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2015
2015
Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy
The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using ballistic electron emission microscopy (BEEM) over… Expand
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Highly Cited
2013
Highly Cited
2013
Detecting single infrared photons with 93% system efficiency
Researchers develop a fiber-coupled single-photon-detection system using amorphous tungsten silicide superconducting nanowire… Expand
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2012
2012
Fluorine Effects on NMOS Characteristics and DRAM Refresh
We observed that in chemical vapor deposition (CVD) tungsten silicide (WSix) poly gate scheme, the gate oxide thickness decreases… Expand
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2005
2005
Tunable work function in fully nickel-silicided polysilicon gates for metal gate MOSFET applications
The work function of fully nickel-silicided polysilicon was investigated. The midgap work function (4.7 eV) was obtained for… Expand
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Highly Cited
1986
Highly Cited
1986
Mechanical Stress Dependence of Radiation Effects in MOS Structures
The effects of mechanical stress on radiation damage in polycide-gate MOS capacitors have been investigated as a function of gate… Expand
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Highly Cited
1985
Highly Cited
1985
Optimal interconnection circuits for VLSI
The propagation delay of interconnection lines is a major factor in determining the performance Of VLSI circuits because the RC… Expand
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1985
1985
Raman microprobe analysis of tungsten silicide
The Raman spectrum of tungsten silicide has been observed and is reported for the first time. It was obtained on the MOLE■ Raman… Expand
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1983
1983
A GaAs 1K static RAM using tungsten-silicide gate self alignment technology
This paper will report on a GaAs 1K static RAM using tungsten silicide gate self-aligned technology and ion implantation. Address… Expand
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Highly Cited
1983
Highly Cited
1983
Properties of low-pressure CVD tungsten silicide for MOS VLSI interconnections
Low-pressure chemical vapor deposition of tungsten silicide has been done and the properties of the deposited films have been… Expand
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Highly Cited
1982
Highly Cited
1982
Effect of scaling of interconnections on the time delay of VLSI circuits
Effect of scaling of dimensions, i.e., increase in chip size and decrease in minimum feature size, on the RC time delay… Expand
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