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Tungsten disilicide
Known as:
Tungsten silicide
, Tungsten(IV) silicide
, WSi2
Tungsten silicide (WSi2) is an inorganic compound, a silicide of tungsten. It is an electrically conductive ceramic material.
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Related topics
Related topics
4 relations
Chemical vapor deposition
Microelectromechanical systems
Molybdenum disilicide
Plasma etching
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy
C. Durcan
,
Robert Balsano
,
V. LaBella
2015
Corpus ID: 119226403
The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using ballistic electron emission microscopy (BEEM) over…
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2007
2007
Formation of SiO2 Scale in High-Temperature Oxidation of WSi2
K. Kurokawa
,
A. Shibayama
,
A. Kobayashi
2007
Corpus ID: 92933208
In order to clarify the relationship between evaporation of WO 3 and formation of a SiO 2 scale in WSi 2 , high temperature…
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2006
2006
Film stress studies and the multilayer Laue lens project
Chian Liu
,
R. Conley
,
A. Macrander
SPIE Optics + Photonics
2006
Corpus ID: 119860342
A Multilayer Laue Lens (MLL) is a new type of linear zone plate, made by sectioning a planar depth-graded multilayer and used in…
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2005
2005
SiGe HBTs on bonded SOI incorporating buried silicide layers
M. Bain
,
H. El Mubarek
,
+7 authors
P. Ashburn
IEEE Transactions on Electron Devices
2005
Corpus ID: 5143686
A technology is described for fabricating SiGe heterojunction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator…
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1990
1990
Tungsten silicide/titanium nitride compound gate for submicron CMOSFET
K.T. Kim
,
L.G. Kang
,
+6 authors
Y.E. Park
Digest of Technical Papers. Symposium on VLSI…
1990
Corpus ID: 37855998
Experimental results are presented for a WSi2/TiN compound-gate MOSFET with a near-midgap work function ranging from 4.63 to 4.75…
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1987
1987
Raman Scattering From Rapid Thermally Annealed Tungsten Silicide Thin Films
H. Jackson
,
J. Boyd
,
U. Ramabadran
,
R. Vuppuladhadium
Optics & Photonics
1987
Corpus ID: 101797295
Raman scattering as a technique for studying the formation of tungsten silicide is discussed. The tungsten silicide films were…
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1985
1985
Raman microprobe analysis of tungsten silicide
P. Codella
,
F. Adar
,
Y. Liu
1985
Corpus ID: 53512055
The Raman spectrum of tungsten silicide has been observed and is reported for the first time. It was obtained on the MOLE■ Raman…
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1984
1984
Controlling void formation in WSi2polycides
C. Koburger
,
H. Geipel
,
M. Ishaq
,
L. Nesbit
IEEE Electron Device Letters
1984
Corpus ID: 28483791
Polycides, composite wiring/electrode films formed by depositing a refractory metal silicide such as WSi2, MoSi2, or TaSi2atop a…
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1984
1984
A high-transconductance self-aligned GaAs MESFET fabricated by through-AIN implantation
H. Onodera
,
H. Kawata
,
N. Yokoyama
,
H. Nishi
,
A. Shibatomi
IEEE Transactions on Electron Devices
1984
Corpus ID: 6932212
This paper describes a new technique for the fabrication of high-transconductance GaAs MESFET's. Tungsten-silicide gate, self…
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1983
1983
A GaAs 1K static RAM using tungsten-silicide gate self alignment technology
N. Yokoyama
,
T. Ohnishi
,
H. Onodera
,
T. Shinoki
,
A. Shibatomi
,
H. Ishikawa
IEEE International Solid-State Circuits…
1983
Corpus ID: 2734623
This paper will report on a GaAs 1K static RAM using tungsten silicide gate self-aligned technology and ion implantation. Address…
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