Skip to search form
Skip to main content
Skip to account menu
Semantic Scholar
Semantic Scholar's Logo
Search 227,027,588 papers from all fields of science
Search
Sign In
Create Free Account
Tungsten disilicide
Known as:
Tungsten silicide
, Tungsten(IV) silicide
, WSi2
Tungsten silicide (WSi2) is an inorganic compound, a silicide of tungsten. It is an electrically conductive ceramic material.
Wikipedia
(opens in a new tab)
Create Alert
Alert
Related topics
Related topics
4 relations
Chemical vapor deposition
Microelectromechanical systems
Molybdenum disilicide
Plasma etching
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy
C. Durcan
,
Robert Balsano
,
V. LaBella
2015
Corpus ID: 119226403
The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using ballistic electron emission microscopy (BEEM) over…
Expand
2009
2009
Estimating Data for Multicriteria Decision Making Problems: Optimization Techniques
Qing Chen
,
E. Triantaphyllou
Encyclopedia of Optimization
2009
Corpus ID: 33115479
2006
2006
Film stress studies and the multilayer Laue lens project
Chian Liu
,
R. Conley
,
A. Macrander
SPIE Optics + Photonics
2006
Corpus ID: 119860342
A Multilayer Laue Lens (MLL) is a new type of linear zone plate, made by sectioning a planar depth-graded multilayer and used in…
Expand
2005
2005
SiGe HBTs on bonded SOI incorporating buried silicide layers
M. Bain
,
H. El Mubarek
,
+7 authors
P. Ashburn
IEEE Transactions on Electron Devices
2005
Corpus ID: 5143686
A technology is described for fabricating SiGe heterojunction bipolar transistors (HBTs) on wafer-bonded silicon-on-insulator…
Expand
1990
1990
Tungsten silicide/titanium nitride compound gate for submicron CMOSFET
K.T. Kim
,
L.G. Kang
,
+6 authors
Y.E. Park
Digest of Technical Papers. Symposium on VLSI…
1990
Corpus ID: 37855998
Experimental results are presented for a WSi2/TiN compound-gate MOSFET with a near-midgap work function ranging from 4.63 to 4.75…
Expand
1987
1987
High Temperature Stable Metal Contacts On GaAs Based On WSi2 As Diffusion Barrier, Characterized By XPS And Electrical Measurements
J. Wiirfl
,
Ram P. Gupta
,
H. Hartnagel
Other Conferences
1987
Corpus ID: 136578063
A systematic investigation of high temperature stable metal contacts on GaAs using WSi2 as a diffusion barrier between the Ge and…
Expand
1985
1985
Raman microprobe analysis of tungsten silicide
P. Codella
,
F. Adar
,
Y. Liu
1985
Corpus ID: 53512055
The Raman spectrum of tungsten silicide has been observed and is reported for the first time. It was obtained on the MOLE■ Raman…
Expand
1984
1984
A high-transconductance self-aligned GaAs MESFET fabricated by through-AIN implantation
H. Onodera
,
H. Kawata
,
N. Yokoyama
,
H. Nishi
,
A. Shibatomi
IEEE Transactions on Electron Devices
1984
Corpus ID: 6932212
This paper describes a new technique for the fabrication of high-transconductance GaAs MESFET's. Tungsten-silicide gate, self…
Expand
1983
1983
A GaAs 1K static RAM using tungsten-silicide gate self alignment technology
N. Yokoyama
,
T. Ohnishi
,
H. Onodera
,
T. Shinoki
,
A. Shibatomi
,
H. Ishikawa
IEEE International Solid-State Circuits…
1983
Corpus ID: 2734623
This paper will report on a GaAs 1K static RAM using tungsten silicide gate self-aligned technology and ion implantation. Address…
Expand
1983
1983
A GaAs 16x16 bit parallel multiplier
Y. Nakayama
,
K. Suyama
,
+4 authors
H. Ishikawa
IEEE Journal of Solid-State Circuits
1983
Corpus ID: 29982720
A GaAs 16/spl times/16-bit parallel multiplier has been constructed using a direct-coupled FET logic (DCFL) circuit with tungsten…
Expand
By clicking accept or continuing to use the site, you agree to the terms outlined in our
Privacy Policy
(opens in a new tab)
,
Terms of Service
(opens in a new tab)
, and
Dataset License
(opens in a new tab)
ACCEPT & CONTINUE
or Only Accept Required