Semantic Scholar uses AI to extract papers important to this topic.
The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using ballistic electron emission microscopy (BEEM) over… Expand Researchers develop a fiber-coupled single-photon-detection system using amorphous tungsten silicide superconducting nanowire… Expand The work function of fully nickel-silicided polysilicon was investigated. The midgap work function (4.7 eV) was obtained for… Expand The effects of mechanical stress on radiation damage in polycide-gate MOS capacitors have been investigated as a function of gate… Expand The propagation delay of interconnection lines is a major factor in determining the performance Of VLSI circuits because the RC… Expand The Raman spectrum of tungsten silicide has been observed and is reported for the first time. It was obtained on the MOLE■ Raman… Expand This paper describes a new technique for the fabrication of high-transconductance GaAs MESFET's. Tungsten-silicide gate, self… Expand This paper will report on a GaAs 1K static RAM using tungsten silicide gate self-aligned technology and ion implantation. Address… Expand A GaAs 16/spl times/16-bit parallel multiplier has been constructed using a direct-coupled FET logic (DCFL) circuit with tungsten… Expand Effect of scaling of dimensions, i.e., increase in chip size and decrease in minimum feature size, on the RC time delay… Expand