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Tungsten disilicide

Known as: Tungsten silicide, Tungsten(IV) silicide, WSi2 
Tungsten silicide (WSi2) is an inorganic compound, a silicide of tungsten. It is an electrically conductive ceramic material.
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Related topics

Related topics

4 relations
Chemical vapor depositionMicroelectromechanical systemsMolybdenum disilicidePlasma etching

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Time dependent changes in Schottky barrier mapping of the W/Si(001) interface utilizing ballistic electron emission microscopy
The W/Si(001) Schottky barrier height is mapped to nanoscale dimensions using ballistic electron emission microscopy (BEEM) over… Expand
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Highly Cited
2013
Highly Cited
2013
Detecting single infrared photons with 93% system efficiency
Researchers develop a fiber-coupled single-photon-detection system using amorphous tungsten silicide superconducting nanowire… Expand
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2005
2005
Tunable work function in fully nickel-silicided polysilicon gates for metal gate MOSFET applications
The work function of fully nickel-silicided polysilicon was investigated. The midgap work function (4.7 eV) was obtained for… Expand
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Highly Cited
1986
Highly Cited
1986
Mechanical Stress Dependence of Radiation Effects in MOS Structures
The effects of mechanical stress on radiation damage in polycide-gate MOS capacitors have been investigated as a function of gate… Expand
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Highly Cited
1985
Highly Cited
1985
Optimal interconnection circuits for VLSI
The propagation delay of interconnection lines is a major factor in determining the performance Of VLSI circuits because the RC… Expand
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1985
1985
Raman microprobe analysis of tungsten silicide
The Raman spectrum of tungsten silicide has been observed and is reported for the first time. It was obtained on the MOLE■ Raman… Expand
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1984
1984
A high-transconductance self-aligned GaAs MESFET fabricated by through-AIN implantation
This paper describes a new technique for the fabrication of high-transconductance GaAs MESFET's. Tungsten-silicide gate, self… Expand
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1983
1983
A GaAs 1K static RAM using tungsten-silicide gate self alignment technology
This paper will report on a GaAs 1K static RAM using tungsten silicide gate self-aligned technology and ion implantation. Address… Expand
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1983
1983
A GaAs 16x16 bit parallel multiplier
A GaAs 16/spl times/16-bit parallel multiplier has been constructed using a direct-coupled FET logic (DCFL) circuit with tungsten… Expand
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Highly Cited
1982
Highly Cited
1982
Effect of scaling of interconnections on the time delay of VLSI circuits
Effect of scaling of dimensions, i.e., increase in chip size and decrease in minimum feature size, on the RC time delay… Expand
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