A GaAs 1K static RAM using tungsten-silicide gate self alignment technology

@article{Yokoyama1983AG1,
  title={A GaAs 1K static RAM using tungsten-silicide gate self alignment technology},
  author={Norimasa Yokoyama and T. Ohnishi and Hironori Onodera and T. Shinoki and A. Shibatomi and Hiroshi Ishikawa},
  journal={1983 IEEE International Solid-State Circuits Conference. Digest of Technical Papers},
  year={1983},
  volume={XXVI},
  pages={44-45}
}
This paper will report on a GaAs 1K static RAM using tungsten silicide gate self-aligned technology and ion implantation. Address access time of 4ns was obtained with power dissipation of 58mW.