Snapback (electrical)

Known as: Snapback 
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the… (More)
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Papers overview

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Review
2018
Review
2018
This is the peer reviewed version of the following article: Verhoosel, C. V., Remmers, J. J. C., Gutiérrez, M. A. and de Borst, R… (More)
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2015
2015
An electrostatic discharge (ESD) protection structure constructed by the stacking of multiple anode gate-cathode gate directly… (More)
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2012
2012
A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring an oxide trench placed between the n-collector… (More)
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2010
2010
Snapback ESD devices suffer from increasing danger when the protected ICs experience ESD events in powered up states. To ensure… (More)
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2010
2010
In this paper we present a new device, the 3.3kV semi-SuperJunction Reverse Conducting Insulated Gate Bipolar Transistor that can… (More)
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2007
2007
This study develops a two-step method, coupling the finite element method (FEM) and the scaled boundary finite element method… (More)
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2006
2006
In order to study dynamic effects in accelerator magnets, such as the decay of the magnetic field during the dwell at injection… (More)
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2004
2004
This paper reports on the accurate modeling of immersion capacitive micromachined ultrasonic transducers (cMUTs) using a time… (More)
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1999
1999
This paper deals with the measurement and prediction of the SOA boundary and the accompanying device physics. Results are given… (More)
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1998
1998
A wave equation on a one-dimensional interval I has a van der Pol type nonlinear boundary condition at the right end. At the left… (More)
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