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Snapback (electrical)

Known as: Snapback 
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the… 
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Related topics

Related topics

1 relation
Impact ionization

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2010
2010
THE MAGNETIC MODEL OF THE LHC IN THE EARLY PHASE OF BEAM COMMISSIONING
The relation between field and current in each family of the Large Hadron Collider magnets is modelled with a set of empirical… 
2008
2008
Mechanism of Reverse Snapback on I-V Characteristics of Power SITHs with Buried Gate Structure
The reverse snapback phenomena (RSP) on I-V characteristics of static induction thyristors (SITH) are physically researched. The… 
2007
2007
Modelling cohesive crack growth using a two-step finite element-scaled boundary finite element coupled method
A two-step method, coupling the finite element method (FEM) and the scaled boundary finite element method (SBFEM), is developed… 
2005
2005
RF ESD protection strategies: Codesign vs. low-C protection
2005
2005
ESD-RF co-design methodology for the state of the art RF-CMOS blocks
2004
2004
Dynamic FEM analysis of multiple cMUT cells in immersion [capacitive micromachined ultrasonic transducers]
This paper reports on the accurate modeling of immersion capacitive micromachined ultrasonic transducers (cMUTs) using a time… 
2003
2003
Dynamic analysis of CMUTs in different regimes of operation
This paper reports on dynamic analysis of an immersed single capacitive micromachined ultrasonic transducer (CMUT) cell… 
1992
1992
Bifurcation and stability of structures with interacting propagating cracks
A general method to calculate the tangential stiffness matrix of a structure with a system of interacting propagating cracks is… 
1983
1983
A simplified model of short-channel MOSFET characteristics in the breakdown mode
When a short-channel MOSFET is driven into the avalanche-induced breakdown region, the drain current increases rapidly and… 
1982
1982
Analysis of Breakdown Phenomena in MOSFET's
An accurate two-dimensional self-consistent numerical model for MOS transistors which is able to predict avalanche behavior is… 
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