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Snapback (electrical)

Known as: Snapback 
Snapback is a mechanism in a bipolar transistor in which avalanche breakdown or impact ionization provides a sufficient base current to turn on the… Expand
Wikipedia

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
An electrostatic discharge (ESD) protection structure constructed by the stacking of multiple anode gate-cathode gate directly… Expand
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Highly Cited
2012
Highly Cited
2012
A computational homogenization procedure for cohesive and adhesive crack modeling of materials with a heterogeneous… Expand
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Highly Cited
2010
Highly Cited
2010
A computational multiscale framework is proposed that incorporates microstructural behaviour in a macroscale discrete fracture… Expand
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2010
2010
In this paper we present a new device, the 3.3kV semi-SuperJunction Reverse Conducting Insulated Gate Bipolar Transistor that can… Expand
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2010
2010
Latchup immunity is a challenging issue for the design of power supply clamps used in high-voltage electrostatic discharge (ESD… Expand
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2007
2007
Realization of on-chip electrostatic discharge (ESD) protection requires extensive technical experience and know-how. A… Expand
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2007
2007
  • L. Lou, J. Liou
  • IEEE Electron Device Letters
  • 2007
  • Corpus ID: 30709673
A new silicon-controlled rectifier (SCR) is proposed and realized in a 0.35-mum/3.3-V fully salicided BiCMOS process for… Expand
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2006
2006
In order to study dynamic effects in accelerator magnets, such as the decay of the magnetic field during the dwell at injection… Expand
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Highly Cited
1998
Highly Cited
1998
A wave equation on a one-dimensional interval I has a van der Pol type nonlinear boundary condition at the right end. At the left… Expand
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1988
1988
The electrostatic discharge (ESD) failure threshold of NMOS transistors in a shelf-aligned TiSi/sub 2/ process has been… Expand
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