Impact ionization

Known as: Impact ionisation 
Impact ionization is the process in a material by which one energetic charge carrier can lose energy by the creation of other charge carriers. For… (More)
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Topic mentions per year

Topic mentions per year

1975-2017
05010019752017

Papers overview

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Highly Cited
2005
Highly Cited
2005
One of the fundamental problems in the continued scaling of transistors is the 60 mV/dec room temperature limit in the… (More)
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2000
2000
The kink effect and excess gate current in InAlAs/InGaAs/InAlAs HEMT's have been linked to impact ionization in the high field… (More)
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1999
1999
A pulsed crossed beam technique is used to measure ionization cross-sections of metallic atoms. Relative values of cross-sections… (More)
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1996
1996
The electron impact ionization cross section of H2 is calculated using a distortedwave approximation. The calculated cross… (More)
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1994
1994
The presence of an energy barrier to the transfer of holes from the channel to the gate electrode of InAlAs/InGaAs HFET's… (More)
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1990
1990
Impact ionization rates for electrons and holes in 
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1990
1990
A method to measure impact ionization current in GaAs MESFETs is presented. The impact ionization current is then used to… (More)
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1987
1987
In the past, carrier ionization rates in the silicon bulk have been measured and reported extensively. We present experiments and… (More)
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1983
1983
The room-temperature electron and hold impact ionization coefficients, α and β, respectively, have been determined for 
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1976
1976
Since electron impact ionization has been studied for well over a half century, it seems a bit unlikely that someone should be… (More)
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