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Impact ionization

Known as: Impact ionisation 
Impact ionization is the process in a material by which one energetic charge carrier can lose energy by the creation of other charge carriers. For… 
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Related topics

Related topics

5 relations
AmplifierCharge-coupled deviceElectron holeSemiconductor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Impact of gate drive voltage on avalanche robustness of trench IGBTs
2011
2011
Beam Test Measurements With Planar and 3D Silicon Strip Detectors Irradiated to sLHC Fluences
The planned luminosity upgrade of the CERN LHC to the super LHC (sLHC) requires investigation of new radiation hard tracking… 
2008
2008
Analysis of the FIRE II Flight Experiment by Means of a Collisional Radiative Model
An accurate investigation of the behavior of electronically excited states of atoms and molecules in the post shock relaxation… 
Highly Cited
2007
Highly Cited
2007
On magnetospheric electron impact ionisation and dynamics in Titan's ram-side and polar ionosphere – a Cassini case study
We present data from the sixth Cassini flyby of Titan (T5), showing that the magnetosphere of Saturn strongly interacts with the… 
Highly Cited
2005
Highly Cited
2005
Total ionizing dose effects on deca-nanometer fully depleted SOI devices
Total ionizing dose effects are investigated for the first time in deca-nanometer fully depleted (FD) silicon-on-insulator (SOI… 
Highly Cited
2005
Highly Cited
2005
ANALYSIS OF STERYL GLUCOSIDES IN FOODS AND DIETARY SUPPLEMENTS BY SOLID‐PHASE EXTRACTION AND GAS CHROMATOGRAPHY
A method to quantify b -sitosterol (BSS) and b -sitosteryl glucoside (BSSG) in dietary supplements containing added BSS and BSSG… 
Highly Cited
1994
Highly Cited
1994
Impact ionization in InAlAs/InGaAs HFET's
The presence of an energy barrier to the transfer of holes from the channel to the gate electrode of InAlAs/InGaAs HFET's… 
1992
1992
Analysis of gate leakage on MOVPE grown InAlAs/InGaAs-HFET
1990
1990
Impact ionization rates in
Impact ionization rates for electrons and holes in 
1980
1980
Picosecond switching of a multi-kilovolt DC bias with laser activated silicon at low temperature
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