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Quantum capacitance
Known as:
Chemical capacitance
Quantum capacitance, also called chemical capacitance is a quantity first introduced by Serge Luryi (1988). In the simplest example, if you make a…
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Related topics
Related topics
5 relations
Band bending
Capacitance–voltage profiling
Graphene
Semiconductor
Broader (1)
Quantum mechanics
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2016
2016
Understanding why replacing I3−/I− by cobalt(II)/(III) electrolytes in bis(diimine)copper(I)-based dye-sensitized solar cells improves performance
Sebastian O. Fürer
,
Biljana Bozic-Weber
,
+4 authors
M. Willgert
2016
Corpus ID: 56167937
The performances of dye-sensitized solar cells (DSCs) comprising heteroleptic bis(diimine)copper(I) based dyes combined with…
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2012
2012
Gate Capacitance Modeling and Diameter-Dependent Performance of Nanowire MOSFETs
Yeonghun Lee
,
K. Kakushima
,
K. Natori
,
H. Iwai
IEEE Transactions on Electron Devices
2012
Corpus ID: 40121444
We investigated the diameter-dependent performance of Si and InAs nanowire metal-oxide-semiconductor field-effect transistors (NW…
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2012
2012
On the origin of the mobility reduction in n- and p-metal–oxide–semiconductor field effect transistors with hafnium-based/metal gate stacks
P. Toniutti
,
P. Palestri
,
D. Esseni
,
F. Driussi
,
M. Michielis
,
L. Selmi
2012
Corpus ID: 55555752
We examine the mobility reduction measured in hafnium-based dielectrics in n- and p-MOSFETs by means of extensive comparison…
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2011
2011
Experimental Determination of Quantum and Centroid Capacitance in Arsenide–Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect
A. Ali
,
H. Madan
,
+5 authors
S. Datta
IEEE Transactions on Electron Devices
2011
Corpus ID: 9691281
Experimental gate capacitance (<i>Cg</i>) versus gate voltage data for InAs<sub>0.8</sub>Sb<sub>0.2</sub> quantum-well MOSFET (QW…
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2010
2010
Quantum Effects on the Gate Capacitance of Trigate SOI MOSFETs
R. Granzner
,
S. Thiele
,
C. Schippel
,
F. Schwierz
IEEE Transactions on Electron Devices
2010
Corpus ID: 24818132
Scaling effects on the gate capacitance of trigate MOS field-effect transistors are studied by means of analytical models and…
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2009
2009
Influence of alumina coating on transport and recombination in DSSCs with 1-methylbenzidazole as electrolyte additives
Xueqing Xu
,
Eva M Barea
,
F. Fabregat‐Santiago
,
J. Bisquert
,
Gang Xu
Photonics and Optoelectronics Meetings
2009
Corpus ID: 137622504
Nanocrystalline TiO2 electrodes have been coated with alumina by being immersed into the solutions of aluminum isopropoxide and…
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2008
2008
One-Dimensional Nanoelectronic Devices - Towards the Quantum Capacitance Limit
J. Knoch
,
M. Björk
,
H. Riel
,
H. Schmid
,
W. Riess
Device Research Conference
2008
Corpus ID: 23219784
We present a study on the scaling of conventional as well as tunneling nanowire/tube field-effect transistors towards the quantum…
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2006
2006
A Circuit-Compatible Model for Ballistic Nanowire Transistors
Jinghong Chen
2006
Corpus ID: 16695808
Silicon nanowire transistors (SNWTs) have attracted broad attention as a promising device structure for future integrated…
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2004
2004
Quantum Capacitance Effects in Carbon Nanotube Field-Effect Devices
L. Latessa
,
A. Pecchia
,
A. Carlo
,
P. Lugli
Abstracts 10th International Workshop on…
2004
Corpus ID: 41230022
Density functional numerical simulations are reported in which the non-equilibrium coherent transport properties of a coaxially…
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2002
2002
ATOMISTIC CAPACITANCE OF A NANOTUBE ELECTROMECHANICAL DEVICE
S. Rotkin
,
Kirill A. BULASHEVICHz
,
N. Aluru
,
N. Mathews
2002
Corpus ID: 46199053
An atomistic capacitance is derived for a single-wall carbon nanotube in a nano-electromechanical device. Multi-scale calculation…
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