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Polysilicon depletion effect
Known as:
Poly Depletion Effect
, Poly depletion
Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate…
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Related topics
Related topics
3 relations
CMOS
Electronic circuit
Gate oxide
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Establishing the Liquid Phase Equilibrium of Angrites to Constrain Their Petrogenesis
F. Tissot
,
M. Collinet
,
N. Dauphas
,
T. Grove
2018
Corpus ID: 54990654
Angrites are a series of differentiat-ed meteorites, extremely silica undersaturated and with unusally high Ca and Al contents [1…
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2018
2018
Cyclic steam oxidation of a steel for biomass power plant application
Rebecca-Louise Mobbs
2018
Corpus ID: 139573946
Austenitic stainless steels are commonly used as heat exchanger tubing in power plants. As a result, this class of steels have…
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2017
2017
Oxide thin films for sustainable, multifunctional and flexible electronics
P. Barquinha
,
P. Bahubalindruni
2017
Corpus ID: 56327630
The growing range of applications of large-area electronics (LAE) in the last years is starting to require levels of performance…
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2017
2017
Gamma-Ray Irradiation Effects on Ga 2 O 3 MOSFETs
M. Wong
,
A. Takeyama
,
+5 authors
M. Higashiwaki
2017
Corpus ID: 139150367
National Institute of Information and Communications Technology, National Institutes for Quantum and Radiological Science and…
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Review
2011
Review
2011
Genetic resources , perspective for collection and utilisation
A. Pandey
,
Rita Gupta
2011
Corpus ID: 49528488
The paper provides a brief overview of the major fibre yielding plants and their uses in India. This account includes data mainly…
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2007
2007
Compact Gate Capacitance Model with Polysilicon Depletion Effect for MOS Device
H. Abebe
,
H. Morris
,
E. Cumberbatch
,
V. Tyree
2007
Corpus ID: 62675968
The MOS gate capacitance model presented here is determined by directly solving the coupled Poisson equations on the poly and…
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2004
2004
A Study on MOSCAPs with Cu Gate Electrode and HfN Diffusion Barriers
StudentKai-Li Wang
,
Chun-Yen Chang
2004
Corpus ID: 161048630
Accompany with the scaling down of the devices, the conventional polysilicon gate can not satisfy the performance requirements of…
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2002
2002
MOS Model 11 - Level 1101
R. van Langevelde
,
A. Scholten
,
D. Klaassen
2002
Corpus ID: 137465515
MOS Model 11, Level 1101, is an updated version of Level 1100 (see NLUR 2001/813). It uses the same basic equations as Level 1100…
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Review
2000
Review
2000
Proven Practice and Future Application of Polysilicon CMP in IC Fabrication**
R. Jin
,
Shi-Jian Li
,
Simon J. Fang
,
F. Redeker
2000
Corpus ID: 189921977
This paper reviews and reports advancements in polysilicon CMP development for five different applications in IC fabrication. The…
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1998
1998
Impact of Nitrogen ( N ) Implantation into Polysilicon Gate on High-Performance Dual-Gate CMOS Transistors
B. Yu
,
N. Kepler
,
C. Hu
1998
Corpus ID: 1048232
The effect of nitrogen (N14) implant into dual-doped polysilicon gates was investigated. The electrical characteristics of sub-0…
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