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Polysilicon depletion effect

Known as: Poly Depletion Effect, Poly depletion 
Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate… 
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Related topics

Related topics

3 relations
CMOSElectronic circuitGate oxide

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2009
2009
The effect of size on photodiode pinch-off voltage for small pixel CMOS image sensors
2009
2009
Modeling of Polysilicon Depletion Effect in Recessed-Channel MOSFETs
The polysilicon depletion effect is one of the key factors that degrade MOSFETs' performance. In this letter, a polysilicon… 
2007
2007
Compact Gate Capacitance Model with Polysilicon Depletion Effect for MOS Device
The MOS gate capacitance model presented here is determined by directly solving the coupled Poisson equations on the poly and… 
2006
2006
Process Integration Issues with Spike, Flash and Laser Anneal Implementation for 90 and 65 NM Technologies
With the need to reduce vertical and lateral device dimensions, submelt laser and flash anneal either with or without prior spike… 
2005
2005
A new logic family based on hybrid MOSFET-polysilicon nanowires
A new logic family based on ultra-thin film (10nm) nanograins (5 to 20nm) polysilicon wires (polySiNW) is proposed, validated and… 
1999
1999
Investigation of intrinsic transistor performance of advanced CMOS devices with 2.5 nm NO gate oxides
Optimum device design for high performance applications has been investigated assuming a fixed oxide thickness of 2.5 nm and… 
Highly Cited
1998
Highly Cited
1998
25 nm CMOS design considerations
This paper explores the limit of bulk (or partially-depleted SOI) CMOS scaling. A feasible design for 25 nm (channel length) CMOS… 
1998
1998
PVD TiN metal gate MOSFETs on bulk silicon and fully depleted silicon-on-insulator (FDSOI) substrates for deep sub-quarter micron CMOS technology
We report here for the first time an evaluation of a polysilicon capped physical vapor deposited (PVD) titanium nitride (TiN… 
1996
1996
Accurate doping profile determination using TED/QM models extensible to sub-quarter micron nMOSFETs
Accurate doping profiles are needed to simulate device characteristics. We use capacitance-voltage curves to interrogate the… 
1981
1981
Ti/W silicide gate technology for self-aligned GaAs MESFET VLSIS
Ti/W mixed metal contacts on GaAs shows instable Schottky diode characteristics with short annealing cycles at temperatures… 
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