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Characterization of oxide traps leading to RTN in high-k and metal gate MOSFETs
We proposed a new method for characterization of oxide traps leading to Random Telegraph Noise (RTN) in high-k and metal gate MOSFETs considering their energy band structure. Through this method andExpand
Electron trap density distribution of Si-rich silicon nitride extracted using the modified negative charge decay model of silicon-oxide-nitride-oxide-silicon structure at elevated temperatures
The authors modified the charge decay model of silicon-oxide-nitride-oxide-silicon-type memory at the temperatures above 150°C. The modified model includes the effect of the internal electric fieldExpand
An Analytic Current–Voltage Equation for Top-Contact Organic Thin Film Transistors Including the Effects of Variable Series Resistance
An analytic current?voltage (I?V) equation for top-contact organic thin film transistors (OTFTs) is derived by analyzing the channel and the overlap region separately. From the analysis on theExpand
Activation Energies $(E_{a})$ of Failure Mechanisms in Advanced NAND Flash Cells for Different Generations and Cycling
The conventional temperature-accelerated lifetime test method of NAND Flash memory does not follow the Arrhenius model, as various failure mechanisms occur concurrently. We completely separated threeExpand
Characterization of the Variable Retention Time in Dynamic Random Access Memory
To study the relationship between the original leakage current fluctuation and the detected variable retention time (VRT) from the retention test of dynamic random access memory (DRAM), we simulatedExpand
RTS-like fluctuation in Gate Induced Drain Leakage current of Saddle-Fin type DRAM cell transistor
RTS (random telegraph signal)-like fluctuation in Gate Induced Drain Leakage (GIDL) current of Saddle-Fin (S-Fin) type DRAM cell transistor was investigated for the first time. Furthermore, two typesExpand
Characterization of an Oxide Trap Leading to Random Telegraph Noise in Gate-Induced Drain Leakage Current of DRAM Cell Transistors
An accurate method for extracting the depth and the energy level of an oxide trap from random telegraph noise (RTN) in the gate-induced drain leakage (GIDL) current of a metal-oxide-semiconductorExpand
Admittance Measurements on OFET Channel and Its Modeling With $R$–$C$ Network
For the modeling of charge response behavior in the organic field-effect-transistor (OFET) channel, the admittance of the OFET channel is measured from the two-terminal MIS structures. The channel isExpand
Investigation of Retention Characteristics for Trap-Assisted Tunneling Mechanism in Sub 20-nm NAND Flash Memory
In this paper, retention characteristics of the trap-assisted tunneling (TAT) mechanism are investigated in sub 20-nm NAND flash memory. Total charge loss source for the TAT mechanismExpand
A Simple Figure of Merit of RF MOSFET for Low-Noise Amplifier Design
In this letter, it is proposed that g<sub>m</sub> <sup>2</sup>/I<sub>D</sub>, which has been used as the figure of merit (FoM) of MOSFETs for analog amplifiers, can also be used as the RF MOSFET FoMExpand
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