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Gate oxide
The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the…
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Related topics
Related topics
9 relations
Antenna effect
Failure of electronic components
Gate dielectric
High-κ dielectric
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Study of Floating Body Effect in SOI Technology
B. Vandana
2013
Corpus ID: 8953475
The paper presents the floating body effects of PD/FD of SOI technology and also discusses the issues behind the effects, gives…
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2010
2010
Observing two stage recovery of gate oxide damage created under negative bias temperature stress
T. Aichinger
,
M. Nelhiebel
,
Sascha Einspieler
,
T. Grasser
2010
Corpus ID: 7010803
We study the hysteresis in threshold voltage shift during alternating gate bias ramps (drain current vs gate voltage (IdVg…
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2005
2005
Study of strain relaxation in Si/SiGe metal-oxide-semiconductor field-effect transistors
S. Olsen
,
A. O'Neill
,
+4 authors
K. Kwa
2005
Corpus ID: 53993071
We report a study of strained Si metal-oxide-semiconductor field-effect transistors (MOSFET’s) fabricated using a high thermal…
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2001
2001
FDK Users Guide (Version 3.0)
R. Fujimoto
,
S. Ferenci
,
+4 authors
Ivan Tacic
2001
Corpus ID: 59626167
2001
2001
Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress
Chao-Chi Hong
,
J. Hwu
2001
Corpus ID: 53457330
The effect of external stress on metal-oxide-semiconductor (MOS) structure with ultrathin gate oxide (∼1.5 nm) was studied. J–V…
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1999
1999
1/f noise characterization of deep sub-micron dual thickness nitrided gate oxide n- and p-MOSFETs
S. D'Souza
,
Li-Ming Hwang
,
+6 authors
P. Kempf
International Electron Devices Meeting…
1999
Corpus ID: 30732338
1/f-noise measurement results on thin and thick gate oxide MOSFETs fabricated in a dual gate thickness CMOS process technology…
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1998
1998
Floating low-temperature radio-frequency plasma oxidation of polycrystalline silicon-germanium
Zhi-Neng Fan
,
Gang Zhao
,
P. Chu
,
Zhonghe Jin
,
H. Kwok
,
M. Wong
1998
Corpus ID: 123238572
Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix…
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1997
1997
A detailed analysis of CMOS SRAM's with gate oxide short defects
J. Segura
,
A. Rubio
IEEE J. Solid State Circuits
1997
Corpus ID: 61774138
Using a model of gate oxide short defects, previously developed and validated experimentally, we investigate the behavior of CMOS…
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1997
1997
Impact Of Trench Sidewall Interface Trap In Shallow Trench Isolation On Junction Leakage Current Characteristics For Sub-0.25 /spl mu/m CMOS Devices
Inaba
,
Takahashi
,
Okayama
,
Yagishita
,
Matsuoka
,
Ishiuchi
Symposium on VLSI Technology
1997
Corpus ID: 40798295
A methodology of direct characterization of interface traps in trench sidewall in STI structure is presented for the first time…
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1988
1988
Nonstationary carrier dynamics in quarter-micron Si MOSFETs
M. Tomizawa
,
K. Yokoyama
,
A. Yoshii
IEEE Trans. Comput. Aided Des. Integr. Circuits…
1988
Corpus ID: 41404205
An application of Monte Carlo particle and relaxation time approximation modeling to quarter-micron Si MOSFETs is presented…
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