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Gate oxide

The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the… 
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9 relations
Antenna effectFailure of electronic componentsGate dielectricHigh-κ dielectric

Papers overview

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2012
2012
The energy distribution of NBTI-induced hole traps in the Si band gap in PNO pMOSFETs
By applying a low temperature sweeping technique, we indentify the energy profile of recoverable hole traps for nitrided oxide… 
2005
2005
Temperature-Aware Modeling and Banking of IC Lifetime Reliability
Most existing integrated circuit (IC) reliability models assume a uniform, typically worst-case, operating temperature, but… 
Highly Cited
2004
Highly Cited
2004
High inversion current in silicon nanowire field effect transistors
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional… 
Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
2001
2001
Degradation in metal-oxide-semiconductor structure with ultrathin gate oxide due to external compressive stress
The effect of external stress on metal-oxide-semiconductor (MOS) structure with ultrathin gate oxide (∼1.5 nm) was studied. J–V… 
2001
2001
FDK Users Guide (Version 3.0)
1999
1999
A concept of gate oxide lifetime limited by "B-mode" stress induced leakage currents in direct tunneling regime
To realize further advances in MOS ULSIs, thin gate oxides in the direct tunneling regime (<3 nm) are strongly required. In this… 
1997
1997
A detailed analysis of CMOS SRAM's with gate oxide short defects
Using a model of gate oxide short defects, previously developed and validated experimentally, we investigate the behavior of CMOS… 
1991
1991
Measurement of Ultrathin (<100 Å) Oxide Films by Multiple‐Angle Incident Ellipsometry
The application of the multiple-angle incident ellipsometry to measure the ultrathin (< 100 A) oxide has been studied in this… 
1988
1988
Nonstationary carrier dynamics in quarter-micron Si MOSFETs
An application of Monte Carlo particle and relaxation time approximation modeling to quarter-micron Si MOSFETs is presented… 
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