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Gate oxide

The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the… 
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Papers overview

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Highly Cited
2012
Highly Cited
2012
An overall performance comparison analysis based on 2-D Poisson's equation solution has been presented here both for silicon-on… 
Highly Cited
2010
Highly Cited
2010
A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f<inf>T… 
Highly Cited
2008
Highly Cited
2008
The optical and carrier transport properties of amorphous transparent zinc indium tin oxide ZITOa-ZITO thin films and the… 
Highly Cited
2004
Highly Cited
2004
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
2004
Highly Cited
2004
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional… 
Highly Cited
2004
Highly Cited
2004
A new MOSFET dosimeter consisting of a floating gate sensor transistor and a reference transistor of identical geometry… 
Highly Cited
2003
Highly Cited
2003
The electronic transport characteristics of self-assembled monolayers of phenylene-based -conjugated molecules were measured in a… 
2000
2000
Shrinking of dimensions allows new functions, continuous increase in speed, and larger and larger density leading eventually to… 
Highly Cited
1984
Highly Cited
1984
Electrical breakdown of thin (32-nm) SiO2films subjected to constant-current stressing is studied. By studying the effects of…