Gate oxide

The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the… (More)
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Highly Cited
2006
Highly Cited
2006
A new charge pump circuit with consideration of gateoxide reliability is designed with two pumping branches in this paper. The… (More)
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Highly Cited
2004
Highly Cited
2004
In this paper we address the growing issue of gate oxide leakage current (I/sub gate/) at the circuit level. Specifically, we… (More)
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Highly Cited
2004
Highly Cited
2004
We propose a new methodology to characterize the negative bias temperature instability (NBTI) degradation without inherent… (More)
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Highly Cited
2003
Highly Cited
2003
In this paper we address the growing issue of gate oxide leakage current (Igate) at the circuit level. Specifically, we develop a… (More)
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Highly Cited
2003
Highly Cited
2003
This paper describes the details of a novel strained transistor architecture which is incorporated into a 90nm logic technology… (More)
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Highly Cited
2001
Highly Cited
2001
A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1–3.6 nm). As a multiplier… (More)
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Highly Cited
2001
Highly Cited
2001
The influence of gate direct tunneling current on ultrathin gate oxide MOS ( nm nm, – nm) circuits has been studied based on… (More)
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Highly Cited
2000
Highly Cited
2000
Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the… (More)
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Highly Cited
1999
Highly Cited
1999
This paper presents a new reliability scaling scenario for CMOS devices with direct-tunneling ultra-thin gate oxide. Device… (More)
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Highly Cited
1996
Highly Cited
1996
  • Chenming Hu
  • International Electron Devices Meeting. Technical…
  • 1996
MOSFET gate oxide scaling limits are examined with respect to time-dependent breakdown, defects, plasma process damage, mobility… (More)
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