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Gate oxide

The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the… Expand
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Papers overview

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Highly Cited
2010
Highly Cited
2010
We propose a new technique for fabricating 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) with high… Expand
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Highly Cited
2006
Highly Cited
2006
A new charge pump circuit with consideration of gate-oxide reliability is designed with two pumping branches in this paper. The… Expand
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Highly Cited
2006
Highly Cited
2006
Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub… Expand
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Highly Cited
2004
Highly Cited
2004
Harnessing the potential of single crystal inorganic nanowires for practical advanced nanoscale applications requires not only… Expand
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Highly Cited
2003
Highly Cited
2003
Silicon nanowires can be prepared with single-crystal structures, diameters as small as several nanometers and controllable hole… Expand
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Highly Cited
2003
Highly Cited
2003
Off-state leakage is static power, current that leaks through transistors even when they are turned off. The other source of… Expand
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Highly Cited
2001
Highly Cited
2001
A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1-3.6 nm). As a multiplier… Expand
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Highly Cited
2001
Highly Cited
2001
Experiments have demonstrated that nitridation provides critically important improvements in the quality of SiO2–SiC interface… Expand
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Highly Cited
2000
Highly Cited
2000
Short-channel effects in fully-depleted double-gate (DG) and cylindrical, surrounding-gate (Cyl) MOSFETs are governed by the… Expand
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Highly Cited
1999
Highly Cited
1999
This paper presents a new reliability scaling scenario for CMOS devices with direct-tunneling ultra-thin gate oxide. Device… Expand
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