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Gate oxide

The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the… 
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Related topics

Related topics

9 relations
Antenna effectFailure of electronic componentsGate dielectricHigh-κ dielectric

Papers overview

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Highly Cited
2016
Highly Cited
2016
A Compact 2-D Analytical Model for Electrical Characteristics of Double-Gate Tunnel Field-Effect Transistors With a SiO2/High- $k$ Stacked Gate-Oxide Structure
A compact 2-D analytical model for electrical characteristics such as surface potential, drain current, and threshold voltage of… 
Highly Cited
2015
Highly Cited
2015
Gate Oxide Reliability Issues of SiC MOSFETs Under Short-Circuit Operation
Silicon-Carbide (SiC) MOSFETs, due to material properties, are designed with smaller thickness in the gate oxide and a higher… 
Highly Cited
2006
Highly Cited
2006
Silicon Vertically Integrated Nanowire Field Effect Transistors
Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub… 
Highly Cited
2005
Highly Cited
2005
A variable range bi-phasic current stimulus driver circuitry for an implantable retinal prosthetic device
This paper reports a driver circuitry to generate bi-phasic (anodic and cathodic) current pulses for stimulating the retinal… 
Highly Cited
2005
Highly Cited
2005
Suspended-gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor
Reference NANOLAB-CONF-2005-019View record in Web of Science Record created on 2007-05-16, modified on 2017-05-10 
Highly Cited
2004
Highly Cited
2004
Single Crystal Nanowire Vertical Surround-Gate Field-Effect Transistor
Harnessing the potential of single crystal inorganic nanowires for practical advanced nanoscale applications requires not only… 
Highly Cited
2004
Highly Cited
2004
Direct integration of metal oxide nanowire in vertical field-effect transistor
We demonstrate seamless direct integration of a semiconductor nanowire grown using a bottom-up approach to obtain a vertical… 
Highly Cited
2001
Highly Cited
2001
Modeling CMOS tunneling currents through ultrathin gate oxide due to conduction- and valence-band electron and hole tunneling
A semi-empirical model is proposed to quantify the tunneling currents through ultrathin gate oxides (1-3.6 nm). As a multiplier… 
Highly Cited
1996
Highly Cited
1996
Gate oxide scaling limits and projection
  • C. Hu
  • 1996
  • Corpus ID: 9460483
MOSFET gate oxide scaling limits are examined with respect to time-dependent breakdown, defects, plasma process damage, mobility… 
Highly Cited
1995
Highly Cited
1995
Soft Breakdown of Ultra-Thin Gate Oxide Layers
The dielectric breakdown of ultra-thin 3 to 4 nm SiO2 layers used as a gate dielectric in poly-Si gate capacitors is investigated… 
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