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Gate oxide

The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the… 
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Related topics

Related topics

9 relations
Antenna effectFailure of electronic componentsGate dielectricHigh-κ dielectric

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2005
2005
Fabrication and properties of under-gated triode with CNT emitter for flat lamp
Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
2004
Highly Cited
2004
High inversion current in silicon nanowire field effect transistors
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional… 
Highly Cited
2004
Highly Cited
2004
Efficient ultraviolet electroluminescence from a Gd-implanted silicon metal–oxide–semiconductor device
Strong ultraviolet electroluminescence with an external quantum efficiency above 1% is observed from an indium-tin oxide/SiO2:Gd… 
Highly Cited
2003
Highly Cited
2003
Absence of Strong Gate Effects in Electrical Measurements on Phenylene-Based Conjugated Molecules
The electronic transport characteristics of self-assembled monolayers of phenylene-based -conjugated molecules were measured in a… 
2000
2000
Heading for decananometer CMOS - Is navigation among icebergs still a viable strategy?
Shrinking of dimensions allows new functions, continuous increase in speed, and larger and larger density leading eventually to… 
1998
1998
High-voltage accumulation-layer UMOSFETs in 4H-SiC
During the past year, the performance of SiC power MOSFETs exceeded the theoretical limits of silicon devices for the first time… 
1989
1989
Ion-sensing using chemically-modified ISFETs
Highly Cited
1984
Highly Cited
1984
On physical models for gate oxide breakdown
Electrical breakdown of thin (32-nm) SiO2films subjected to constant-current stressing is studied. By studying the effects of… 
1984
1984
Study of Electrical Characteristics on Thermally Nitrided SiO2 (Nitroxide) Films
A significant influence of thermal nitridation on the electrical characteristics of nitroxide films was found in this study… 
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