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Gate oxide
The gate oxide is the dielectric layer that separates the gate terminal of a MOSFET from the underlying source and drain terminals as well as the…
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Related topics
Related topics
9 relations
Antenna effect
Failure of electronic components
Gate dielectric
High-κ dielectric
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2012
Highly Cited
2012
Spatial Composition Grading of Binary Metal Alloy Gate Electrode for Short-Channel SOI/SON MOSFET Application
B. Manna
,
S. Sarkhel
,
N. Islam
,
Sreyash Sarkar
,
S. K. Sarkar
IEEE Transactions on Electron Devices
2012
Corpus ID: 26954986
An overall performance comparison analysis based on 2-D Poisson's equation solution has been presented here both for silicon-on…
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Highly Cited
2010
Highly Cited
2010
A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps
H. Rücker
,
B. Heinemann
,
+19 authors
Y. Yamamoto
IEEE Bipolar/BiCMOS Circuits and Technology…
2010
Corpus ID: 12107058
A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f<inf>T…
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Highly Cited
2008
Highly Cited
2008
Optical and Carrier Transport Properties of Cosputtered Zn–In–Sn–O Films and Their Applications to TFTs
Kachirayil J. Saji
,
M. Jayaraj
,
K. Nomura
,
T. Kamiya
,
Hideo Hosonob
2008
Corpus ID: 56042057
The optical and carrier transport properties of amorphous transparent zinc indium tin oxide ZITOa-ZITO thin films and the…
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2005
2005
Fabrication and properties of under-gated triode with CNT emitter for flat lamp
Y. Jung
,
G. Son
,
+4 authors
Chong-Yun Park
2005
Corpus ID: 27762056
Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
Yu-Chih Tseng
,
Peiqi Xuan
,
+4 authors
H. Dai
2004
Corpus ID: 1560670
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS…
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Highly Cited
2004
Highly Cited
2004
High inversion current in silicon nanowire field effect transistors
S. Koo
,
A. Fujiwara
,
Jinhua Han
,
E. Vogel
,
C. Richter
,
J. Bonevich
2004
Corpus ID: 55263936
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional…
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Highly Cited
2004
Highly Cited
2004
A sensitive, temperature-compensated, zero-bias floating gate MOSFET dosimeter
N. G. Tarr
,
K. Shortt
,
Yanbin Wang
,
I. Thomson
IEEE Transactions on Nuclear Science
2004
Corpus ID: 42812555
A new MOSFET dosimeter consisting of a floating gate sensor transistor and a reference transistor of identical geometry…
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Highly Cited
2003
Highly Cited
2003
Absence of Strong Gate Effects in Electrical Measurements on Phenylene-Based Conjugated Molecules
Jeong-O Lee
,
G. Lientschnig
,
+6 authors
C. Dekker
2003
Corpus ID: 15534581
The electronic transport characteristics of self-assembled monolayers of phenylene-based -conjugated molecules were measured in a…
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2000
2000
Heading for decananometer CMOS - Is navigation among icebergs still a viable strategy?
T. Skotnicki
European Solid-State Device Research Conference
2000
Corpus ID: 24653856
Shrinking of dimensions allows new functions, continuous increase in speed, and larger and larger density leading eventually to…
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Highly Cited
1984
Highly Cited
1984
On physical models for gate oxide breakdown
S. Holland
,
I. Chen
,
T. Ma
,
C. Hu
IEEE Electron Device Letters
1984
Corpus ID: 46068936
Electrical breakdown of thin (32-nm) SiO2films subjected to constant-current stressing is studied. By studying the effects of…
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