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Gate dielectric

A gate dielectric is a dielectric used between the gate and substrate of a field-effect transistor. In state-of-the-art processes, the gate… 
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Related topics

Related topics

7 relations
Gate oxideHot-carrier injectionQuantum stateSemiconductor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Optimization of n- and p-type TFETs Integrated on the Same ${\rm InAs}/{\rm Al}_{x}{\rm Ga}_{1-x}{\rm Sb}$ Technology Platform
Design of a suitable technology platform is carried out in this paper for co-integration of simultaneously optimized n- and p… 
2010
2010
The morphology of integrated self-assembled monolayers and their impact on devices - a computational and experimental approach
2008
2008
Low-operating-voltage polymeric transistor with solution-processed low-k polymer/high-k metal-oxide bilayer insulators
2007
2007
Photocurable Organic Gate Insulator for the Fabrication of High‐Field Effect Mobility Organic Transistors by Low Temperature and Solution Processing
Demand for inexpensive electronic devices has driven interest in organic semiconductors that can be deposited by simple, low-cost… 
2007
2007
Applications of DCIV method to NBTI characterization
Highly Cited
2006
Highly Cited
2006
Tuning effective metal gate work function by a novel gate dielectric HfLaO for nMOSFETs
Using a novel HfLaO gate dielectric for nMOSFETs with different La composition, we report for the first time that TaN (or HfN… 
2006
2006
Leakage Biased pMOS Sleep Switch Dynamic Circuits
  • Zhiyu LiuV. Kursun
  • IEEE Transactions on Circuits and Systems - II…
  • 2006
  • Corpus ID: 15450688
In this brief, a low-overhead circuit technique is proposed to simultaneously reduce subthreshold and gate-oxide leakage currents… 
Highly Cited
2005
Highly Cited
2005
Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate
Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric… 
2003
2003
Fully-depleted SOI devices with TaSiN gate, HfO2 gate dielectric, and elevated source/drain extensions
We report for the first time the performance of ultrathin film fully-depleted (FD) silicon-on-insulator (SOI) CMOS transistors… 
Highly Cited
1998
Highly Cited
1998
Ultrathin oxide-nitride gate dielectric MOSFET's
The first ultrathin oxide-nitride (O-N) gate dielectrics with oxide equivalent thickness of less than 2 nm have been deposited… 
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