Skip to search formSkip to main contentSkip to account menu

Gate dielectric

A gate dielectric is a dielectric used between the gate and substrate of a field-effect transistor. In state-of-the-art processes, the gate… 
Wikipedia (opens in a new tab)

Related topics

Related topics

7 relations
Gate oxideHot-carrier injectionQuantum stateSemiconductor

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2010
2010
Fabrication and characterization of sol-gel-derived zinc oxide thin-film transistor
Thin-film transistors (TFTs) with zinc oxide channel layers were fabricated through a simple and low-cost solution process… 
Highly Cited
2010
Highly Cited
2010
Bias-Stress Effect in Pentacene Organic Thin-Film Transistors
The effects of bias stress in integrated pentacene organic transistors are studied and modeled for different stress conditions… 
Highly Cited
2008
Highly Cited
2008
Si-Nanowire Based Gate-All-Around Nonvolatile SONOS Memory Cell
This letter presents a high-speed silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory cell in gate-all-around Si… 
2008
2008
Control of roughness at interfaces and the impact on charge mobility in all-polymer field-effect transistors
The interfacial roughness at a buried dielectric–semiconductor interface in an all-polymer field-effect transistor (FET) is… 
2007
2007
Low-voltage organic thin film transistors with hydrophobic aluminum nitride film as gate insulator
2006
2006
Leakage Biased pMOS Sleep Switch Dynamic Circuits
  • Zhiyu LiuV. Kursun
  • IEEE Transactions on Circuits and Systems - II…
  • 2006
  • Corpus ID: 15450688
In this brief, a low-overhead circuit technique is proposed to simultaneously reduce subthreshold and gate-oxide leakage currents… 
Highly Cited
2005
Highly Cited
2005
Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/ gate dielectric and metal gate
Schottky-barrier source/drain (S/D) germanium p-channel MOSFETs are demonstrated for the first time with HfAlO gate dielectric… 
Highly Cited
2004
Highly Cited
2004
Schottky-barrier S/D MOSFETs with high-k gate dielectrics and metal-gate electrode
This letter presents a low-temperature process to fabricate Schottky-barrier silicide source/drain transistors (SSDTs) with high… 
Highly Cited
2002
Highly Cited
2002
A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate
A novel low thermal budget (/spl les/400/spl deg/C) germanium MOS process with high-/spl kappa/ gate dielectric and metal gate… 
Highly Cited
2001
Highly Cited
2001
High performance 35 nm gate length CMOS with NO oxynitride gate dielectric and ni SALICIDE
35 nm gate length CMOS devices with oxynitride gate dielectric and Ni SALICIDE have been fabricated to study the feasibility of… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)