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Fundamentals of Modern VLSI Devices
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted asExpand
Device scaling limits of Si MOSFETs and their application dependencies
TLDR
The end result is that there is no single end point for scaling, but that instead there are many end points, each optimally adapted to its particular applications. Expand
Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's
Quantum-mechanical modeling of electron tunneling current from the quantized inversion layer of ultra-thin-oxide (<40 /spl Aring/) nMOSFET's is presented, together with experimental verification. AnExpand
CMOS scaling into the nanometer regime
Starting with a brief review on 0.1-/spl mu/m (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light ofExpand
A continuous, analytic drain-current model for DG MOSFETs
This letter presents a continuous analytic current-voltage (I-V) model for double-gate (DG) MOSFETs. It is derived from closed-form solutions of Poisson's equation, and current continuity equationExpand
An analytical solution to a double-gate MOSFET with undoped body
A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution givesExpand
Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs
A one-dimensional (1-D) analytic solution is derived for an undoped (or lightly doped) double-gate (DG) MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution isExpand
Generalized scale length for two-dimensional effects in MOSFETs
We derive a new scale length for two-dimensional (2-D) effects in MOSFETs and discuss its significance. This derivation properly takes into account the difference in permittivity between the SiExpand
Simulation of Nanoscale Multidimensional Transient Heat Conduction Problems Using Ballistic-Diffusive Equations and Phonon Boltzmann Equation
Heat conduction. in micro- and nanoscale and in ultrafast processes may deviate from the predictions of the Fourier law, due to boundary and interface scattering, the ballistic nature of theExpand
25 nm CMOS design considerations
This paper explores the limit of bulk (or partially-depleted SOI) CMOS scaling. A feasible design for 25 nm (channel length) CMOS, without continued scaling of oxide thickness and power supplyExpand
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