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Publications Influence

Fundamentals of Modern VLSI Devices

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as… Expand

2,277 231- PDF

Device scaling limits of Si MOSFETs and their application dependencies

- D. Frank, R. Dennard, E. Nowak, P. Solomon, Y. Taur, H. P. Wong
- Engineering
- 1 March 2001

This paper presents the current state of understanding of the factors that limit the continued scaling of Si complementary metal-oxide-semiconductor (CMOS) technology and provides an analysis of the… Expand

1,215 36- PDF

Quantum-mechanical modeling of electron tunneling current from the inversion layer of ultra-thin-oxide nMOSFET's

- S.-H. Lo, D. Buchanan, Y. Taur, W. Wang
- Chemistry
- IEEE Electron Device Letters
- 1 May 1997

Quantum-mechanical modeling of electron tunneling current from the quantized inversion layer of ultra-thin-oxide (<40 /spl Aring/) nMOSFET's is presented, together with experimental verification. An… Expand

750 30

CMOS scaling into the nanometer regime

- Y. Taur, D. Buchanan, +8 authors H. P. Wong
- Materials Science
- 1 April 1997

Starting with a brief review on 0.1-/spl mu/m (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of… Expand

819 22- PDF

An analytical solution to a double-gate MOSFET with undoped body

- Y. Taur
- Chemistry
- 1 May 2000

A one-dimensional (1-D) analytical solution is derived for an undoped (or lightly-doped) double-gate MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution gives… Expand

268 19

A continuous, analytic drain-current model for DG MOSFETs

- Y. Taur, Xiaoping Liang, Wei Wang, H. Lu
- Chemistry
- 6 February 2004

This letter presents a continuous analytic current-voltage (I-V) model for double-gate (DG) MOSFETs. It is derived from closed-form solutions of Poisson's equation, and current continuity equation… Expand

298 18

Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs

- Y. Taur
- Physics
- 1 December 2001

A one-dimensional (1-D) analytic solution is derived for an undoped (or lightly doped) double-gate (DG) MOSFET by incorporating only the mobile charge term in Poisson's equation. The solution is… Expand

339 17

Generalized scale length for two-dimensional effects in MOSFETs

- D. J. Frank, Y. Taur, H.-S.P. Wong
- Chemistry
- IEEE Electron Device Letters
- 1 October 1998

We derive a new scale length for two-dimensional (2-D) effects in MOSFETs and discuss its significance. This derivation properly takes into account the difference in permittivity between the Si… Expand

277 16

25 nm CMOS design considerations

- Y. Taur, C. Wann, D. J. Frank
- Physics
- International Electron Devices Meeting…
- 6 December 1998

This paper explores the limit of bulk (or partially-depleted SOI) CMOS scaling. A feasible design for 25 nm (channel length) CMOS, without continued scaling of oxide thickness and power supply… Expand

252 14

MOSFET channel length: extraction and interpretation

- Y. Taur
- Physics
- 2000

This paper focuses on MOSFET channel length: its definition, extraction, and physical interpretation. After a brief review of the objectives of channel length extraction and previous extraction… Expand

97 14