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NMOS logic

Known as: N-type metal-oxide-semiconductor, NMOS 
N-type metal-oxide-semiconductor logic uses n-type field effect transistors (MOSFETs) to implement logic gates and other digital circuits. These nMOS… 
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Related topics

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1801 series CPUAMD Lance Am7990AND-OR-InvertApplication-specific integrated circuit

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2010
Highly Cited
2010
Local $V_{\rm th}$ Variability and Scalability in Silicon-on-Thin-BOX (SOTB) CMOS With Small Random-Dopant Fluctuation
The silicon on thin buried oxide (SOTB) has the smallest V th variation among planar CMOS due to a low-dose channel. This study… 
Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
2004
Highly Cited
2004
Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress
This paper presents an electrical analysis of mechanical stress induced by shallow trench isolation (STI) on MOSFETs of advanced… 
Highly Cited
2003
Highly Cited
2003
Performance dependence of CMOS on silicon substrate orientation for ultrathin oxynitride and HfO2 gate dielectrics
Dependence of CMOS performance on silicon crystal orientation of [100], [111], and [110] has been investigated with the… 
Highly Cited
1986
Highly Cited
1986
"Introduction to nMOS and cMOS VLSI Systems Design" by Amar Mukherjee, from: Prentice-Hall, Englewood Cliffs, NJ 07632, U.S.A
Highly Cited
1986
Highly Cited
1986
Resonant-microbridge vapor sensor
A novel integrated vapor sensor is described that incorporates a polycrystalline silicon microbridge coated with a thin polymer… 
Highly Cited
1986
Highly Cited
1986
The impact of intrinsic series resistance on MOSFET scaling
The intrinsic parasitic series resistance associated with the practical structure of a MOSFET is examined. The components… 
Highly Cited
1985
Highly Cited
1985
Development of the Self-Aligned Titanium Silicide Process for VLSI Applications
A manufacturable self-aligned titanium silicide process which simultaneously silicides both polysilicon gates and junctions has… 
Highly Cited
1984
Highly Cited
1984
Super Recovery of Total Dose Damage in MOS Devices
Super recovery of the gate threshold voltage has been observed for several types of commercial NMOS integrated circuits. These… 
Highly Cited
1978
Highly Cited
1978
MOS switched capacitor ladder filters
A new technique for designing precision, fully integrated, high-order filters using standard MOS technology is described… 
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