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NMOS logic

Known as: N-type metal-oxide-semiconductor, NMOS 
N-type metal-oxide-semiconductor logic uses n-type field effect transistors (MOSFETs) to implement logic gates and other digital circuits. These nMOS… 
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Related topics

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1801 series CPUAMD Lance Am7990AND-OR-InvertApplication-specific integrated circuit

Papers overview

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Highly Cited
2007
Highly Cited
2007
(Japanese Journal of Applied Physics,46(4B):2107-2111)Impact of Source/Drain Si1 yCy Stressors on Silicon-on-Insulator N-type Metal-Oxide-Semiconductor Field-Effect Transistors
Highly Cited
2006
Highly Cited
2006
A wide locking range and low Voltage CMOS direct injection-locked frequency divider
A low voltage and wide locking range injection-locked frequency divider using a standard 0.18-/spl mu/m complementary metal oxide… 
Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
2004
Highly Cited
2004
Electrical analysis of mechanical stress induced by STI in short MOSFETs using externally applied stress
This paper presents an electrical analysis of mechanical stress induced by shallow trench isolation (STI) on MOSFETs of advanced… 
Highly Cited
2000
Highly Cited
2000
A CMOS charge pump for low voltage operation
This paper proposes a low-voltage, high performance charge pump circuit suitable for implementation in standard CMOS technologies… 
Highly Cited
1998
Highly Cited
1998
A 1.4-GHz 3-mW CMOS LC low phase noise VCO using tapped bond wire inductances
A 1.4-GHz LC voltage-controlled oscillator has been implemented in a MOSIS 0.5-/spl mu/m CMOS process. Complementary cross… 
Highly Cited
1994
Highly Cited
1994
Ultrafast operation of V/sub th/-adjusted p/sup +/-n/sup +/ double-gate SOI MOSFET's
To optimize the V/sub th/ of double-gate SOI MOSFET's, we fabricated devices with p/sup +/ poly-Si for the front-gate electrode… 
Highly Cited
1985
Highly Cited
1985
NMOS protection circuitry
This paper discusses the major models that relate to breakdown phenomena and how they relate to protection-circuit design. The… 
Highly Cited
1984
Highly Cited
1984
Super Recovery of Total Dose Damage in MOS Devices
Super recovery of the gate threshold voltage has been observed for several types of commercial NMOS integrated circuits. These… 
Highly Cited
1984
Highly Cited
1984
Recursive implementation of optimal time VLSi integer multipliers
We present two algorithms suitable for VLSI implementation of very fast log/V-time multipliers. The first one achieves provably… 
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