Magnetoresistive random-access memory

Known as: Magnetoresistive RAM, Spin-transfer torque magnetoresistive random access memory, Spin-Torque Magnetoresistive Random Access Memory 
Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology under development since the 1990s. Continued increases… (More)
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Topic mentions per year

Topic mentions per year

1990-2017
05010015019902017

Papers overview

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Review
2016
Review
2016
In this paper, a review of the developments in MRAM technology over the past 20 years is presented. The various MRAM generations… (More)
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2016
2016
A high-speed random number generator (RNG) circuit based on magnetoresistive random-access memory (MRAM) using an error… (More)
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2010
2010
A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total… (More)
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2009
2009
MRAM is a nonvolatile memory that has been demonstrated and supports heavy ion immunity to an LET of approximately 69 MeV-cm 2… (More)
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Review
2008
Review
2008
This paper provides an in-depth review of the magnetoresistive random access memory technology and its developments over the past… (More)
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2008
2008
MRAM has received a great deal of attention in recent years for its potential to become a universal memory capable of… (More)
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2005
2005
As magnetic tunnel junction (MTJ) cells for magnetoresistive random access memory (MRAM) are reduced in size, the presence of a… (More)
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Review
2004
Review
2004
  • Baden Hughes
  • 2004 IEEE International Reliability Physics…
  • 2004
This paper provides an overview of the design and operation of, and materials used in, magnetoresistive random access memory… (More)
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Review
2004
Review
2004
Magnetic tunnel junction magnetoresistive random-access memory (MTJ-MRAM) appears to be in an advanced stage of development at… (More)
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1999
1999
MRAhl (Magnetoresistive Random Accebs hlemor)) has man} advantages o x r con\,entional RAM such as nonvolariliry, non-demctive… (More)
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