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Magnetoresistive random-access memory

Known as: Magnetoresistive RAM, Spin-transfer torque magnetoresistive random access memory, Spin-Torque Magnetoresistive Random Access Memory 
Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology under development since the 1990s. Continued increases… 
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Related topics

Related topics

29 relations
CPU cacheCharge pumpDigital cameraEEPROM

Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory
This thesis presents the modeling and design of memory cells for Spin Torque Transfer Magnetoresistive Random Access Memory (STT… 
2013
2013
A Low-Power Low-VDD Nonvolatile Latch Using Spin Transfer Torque MRAM
The high leakage power due to the scaling down of the process nodes has been one of the critical issues in CMOS circuits… 
2011
2011
Write Activity Minimization for Nonvolatile Main Memory Via Scheduling and Recomputation
Nonvolatile memories such as Flash memory, phase change memory (PCM), and magnetic random access memory (MRAM) have many… 
2009
2009
A 90nm 12ns 32Mb 2T1MTJ MRAM
Since MRAM cells have unlimited write endurance, they can be used as substitutes for DRAMs or SRAMs. MRAMs in electronic… 
2008
2008
Development of novel prototype scalable magnetoresistive random access memory
MRAM has received a great deal of attention in recent years for its potential to become a universal memory capable of… 
Review
2004
Review
2004
Tutorial on magnetic tunnel junction magnetoresistive random-access memory
  • B. Cockburn
  • Records of the International Workshop on Memory…
  • 2004
  • Corpus ID: 19926394
Magnetic tunnel junction magnetoresistive random-access memory (MTJ-MRAM) appears to be in an advanced stage of development at… 
2004
2004
Magnetoresistive random access memory circuit
The utility model discloses a magnetoresistive random access memory circuit including a magnetoresistive memory cell which is… 
2000
2000
Nanostructuring magnetic thin films using interference lithography
Proliferation of data caused by rapid increases in computer power and the rise of the internet have caused an acute need for… 
1999
1999
High-speed characterization of submicrometer giant magnetoresistive devices
A microwave test structure has been designed to measure the high-speed response of giant magnetoresistive (GMR) devices. The test… 
1991
1991
Fast Magnetoresistive Random-Access Memory
Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand…