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Magnetoresistive random-access memory

Known as: Magnetoresistive RAM, Spin-transfer torque magnetoresistive random access memory, Spin-Torque Magnetoresistive Random Access Memory 
Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology under development since the 1990s. Continued increases… 
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Related topics

29 relations
CPU cacheCharge pumpDigital cameraEEPROM

Broader (1)

Non-volatile memory

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Modeling and Design of Spin Torque Transfer Magnetoresistive Random Access Memory
This thesis presents the modeling and design of memory cells for Spin Torque Transfer Magnetoresistive Random Access Memory (STT… 
2010
2010
Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)
A 1 Mbit MRAM, a nonvolatile memory that uses magnetic tunnel junction (MJT) storage elements, has been characterized for total… 
2008
2008
Development of novel prototype scalable magnetoresistive random access memory
MRAM has received a great deal of attention in recent years for its potential to become a universal memory capable of… 
Highly Cited
2006
Highly Cited
2006
Spin Torque and Field-Driven Perpendicular MRAM Designs Scalable to Multi-Gb/Chip Capacity
In this paper, we present a micromagnetic analysis of two novel magnetoresistive memory designs, both of which utilize the… 
Highly Cited
2005
Highly Cited
2005
A 16-Mb MRAM featuring bootstrapped write drivers
A 16-Mb magnetic random access memory (MRAM) is demonstrated in 0.18-/spl mu/m three-Cu-level CMOS with a three-level MRAM… 
Review
2004
Review
2004
Tutorial on magnetic tunnel junction magnetoresistive random-access memory
  • B. Cockburn
  • Records of the International Workshop on Memory…
  • 2004
  • Corpus ID: 19926394
Magnetic tunnel junction magnetoresistive random-access memory (MTJ-MRAM) appears to be in an advanced stage of development at… 
2004
2004
Magnetoresistive random access memory circuit
The utility model discloses a magnetoresistive random access memory circuit including a magnetoresistive memory cell which is… 
1999
1999
An enhanced structure for multilevel magnetoresistive random access memory
A new multilevel magnetoresistive random access memory (MRAM) has been developed. It consists of one sensing layer per storage… 
Highly Cited
1996
Highly Cited
1996
Identification of a new type of electronic state in the magnetoresistive orthomanganites
PEROVSKITES of composition Ln1–xAxMnO3 (where Ln and A are rare-earth and alkaline-earth elements respectively) have become the… 
1991
1991
Fast Magnetoresistive Random-Access Memory
Magnetoresistive binary digital memories of proposed new type expected to feature high speed, nonvolatility, ability to withstand… 
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