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Magnetoresistive random-access memory

Known as: Magnetoresistive RAM, Spin-transfer torque magnetoresistive random access memory, Spin-Torque Magnetoresistive Random Access Memory 
Magnetoresistive random-access memory (MRAM) is a non-volatile random-access memory technology under development since the 1990s. Continued increases… Expand
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Papers overview

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2018
2018
Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is an attractive alternative to existing random access… Expand
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Highly Cited
2017
Highly Cited
2017
Graphene and related materials (GRMs) are promising candidates for the fabrication of resistive random access memories (RRAMs… Expand
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Highly Cited
2016
Highly Cited
2016
The dependence of the write-error rate (WER) on the applied write voltage, write pulse width, and device size was examined in… Expand
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Highly Cited
2012
Highly Cited
2012
Various new nonvolatile memory (NVM) technologies have emerged recently. Among all the investigated new NVM candidate… Expand
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Highly Cited
2011
Highly Cited
2011
Several emerging nonvolatile memories (NVMs) including phase-change RAM (PCRAM) [1–3], MRAM [4–5], and resistive RAM (RRAM) [6–8… Expand
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Highly Cited
2009
Highly Cited
2009
Caching techniques have been an efficient mechanism for mitigating the effects of the processor-memory speed gap. Traditional… Expand
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Highly Cited
2006
Highly Cited
2006
Colossal magnetoresistance (CMR) phenomena are observed in the perovskite-type hole-doped manganites in which the double-exchange… Expand
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Highly Cited
2005
Highly Cited
2005
Today9s electronic gadgets, such as digital cameras and mp3 players, often contain three different types of memory, because none… Expand
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Review
2003
Review
2003
Magnetoresistive random access memory (MRAM) technology combines a spintronic device with standard silicon-based microelectronics… Expand
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Highly Cited
2003
Highly Cited
2003
This paper mainly focuses on the development of the NOR flash memory technology, with the aim of describing both the basic… Expand
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