Spin Torque and Field-Driven Perpendicular MRAM Designs Scalable to Multi-Gb/Chip Capacity

@article{Zhu2006SpinTA,
  title={Spin Torque and Field-Driven Perpendicular MRAM Designs Scalable to Multi-Gb/Chip Capacity},
  author={Xiaochun Zhu and Jian-Gang Zhu},
  journal={IEEE Transactions on Magnetics},
  year={2006},
  volume={42},
  pages={2739-2741}
}
In this paper, we present a micromagnetic analysis of two novel magnetoresistive memory designs, both of which utilize the material-intrinsic perpendicular uniaxial magnetic anisotropy for retaining memory states. The analysis shows that such perpendicular memory element design allows the utilization of thick magnetic film, thereby enabling downsize scalability of each memory element while maintaining sufficient thermal stability. One of the designs is to utilize direct current injection for… CONTINUE READING
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