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BCDMOS

BCDMOS is a complex circuit composed of Bipolar, CMOS and LDMOS devices. Breakdown voltages can be as high as 750 V.
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Related topics

Related topics

6 relations
Analogue electronicsCMOSElectronic circuitIntegrated circuit

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Highly Efficient Envelope-Tracking Modulator Over Wide Output Power Range for Dual-Mode Power Amplifier
This paper presents a highly efficient envelope-tracking (ET) modulator over wide output power range. The ET modulator is… 
2013
2013
HB1340 ℄ Advanced 0.13um BCDMOS technology of complimentary LDMOS including fully isolated transistors
In this work, we developed a HB1340-0.13um BCD technology of the complimentary LDMOS including fully isolated structure device… 
2013
2013
A 6.0-W bi-directional DC-DC converter for wireless power transceiver in 0.35-µm BCDMOS
A 6.0-W bi-directional DC-DC converter has been developed for a wireless power transceiver which enables a mobile device to… 
2013
2013
JFET pinched bootstrap diode (JPBD) without substrate leakage current integration to 120V BCDMOS process
A new concept to realize the usage of a high-voltage bootstrap diode without substrate leakage current for 120 V high-side-driver… 
2013
2013
An automatic load-adaptive switching frequency selection technique for improving the light-load efficiency of a buck converter
A load-adaptive automatic switching frequency selection scheme is proposed to improve the power efficiency of a switching buck… 
2005
2005
Design of Low Power Monolithic DC-DC Buck Converter with Integrated Inductor
This paper presents the design and fabrication of monolithic buck converter using standard CMOS process. As the Q-factor of… 
2004
2004
A 20-W stereo class-D audio output power stage in 0.6-/spl mu/m BCDMOS technology
This paper presents a highly power efficient 2/spl times/20-W class-D audio output power stage implemented in 0.6-/spl mu/m… 
2003
2003
Atmel ’ s Platform-based Methodology for System-on-Chip Design
The semiconductor industry is moving towards nanoscale technology with IC transistor counts attaining the hundreds of millions… 
2002
2002
The Advanced RESURF Structure to Improve On-Resistance in BCDMOS
In this paper, We report the novel RESURF structure of LDMOS TR with the p-bottom layer to improve OnResistance. The developed… 
2001
2001
Submicron BCDMOS process with extended LDMOS safe-operating-area by optimizing body current
A 20V submicron BCDMOS process is presented with extended LDMOS SOA (Safe-Operating-Area) for smart power applications by… 
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