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BCDMOS

BCDMOS is a complex circuit composed of Bipolar, CMOS and LDMOS devices. Breakdown voltages can be as high as 750 V.
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Papers overview

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2016
2016
High-voltage linear drivers for multiple-string LEDs have been widely used in general lighting due to their low cost, simplicity… 
2016
2016
This paper presents design of an ultra-high precision bandgap voltage reference circuit in a 180nm BCDMOS 1P6M process. A novel… 
2015
2015
본 논문에서는 자동차 스마트 정션 박스(Smart Junction Box: SJB)의 소형화를 위하여 기존에 단위소자로 구성되어 있던 Enable 스위치 회로의 ASIC화를 위한 연구를 수행하였다. Enable… 
2015
2015
This paper presents a highly efficient envelope-tracking (ET) modulator over wide output power range. The ET modulator is… 
2015
2015
This paper presents a design of the enable switch circuit, which is consist of discrete device at smart junction box(SJB) board… 
2013
2013
본 논문에서는 입력전압을 감지하지 않는 전류연속/임계동작모드 active power factor correction(PFC) circuit을 제안하였다. 기존의 입력전압을 감지하지 않는 PFC circuit… 
2011
2011
The structure and process of high voltage BCDMOS are studied and optimized in this paper.The BCDMOS IC includes NPN,PNP,NMOS,PMOS… 
2010
2010
This paper describes the design methodology of a low dropout regulator (LDO). It was used to develop a power management sub… 
2003
2003
The semiconductor industry is moving towards nanoscale technology with IC transistor counts attaining the hundreds of millions… 
2002
2002
In this paper, We report the novel RESURF structure of LDMOS TR with the p-bottom layer to improve OnResistance. The developed…