Sunhak Lee

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High performance lateral diffused MOSFETs on a CMOS platform have been developed for handset power applications. The LDMOS, with 0.3 /spl mu/m physical gate length and 7 nm gate oxide, shows high f/sub T/ and f/sub Max/ values up to 32 and 26 GHz, respectively, as well as low on-resistance of 3.1 ohm-mm and high saturated current of about 450 /spl mu/A//spl(More)
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