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Wire bonding

Known as: Bond wire, Bond, Wirebond 
Wire bonding is the method of making interconnections between an integrated circuit (IC) or other semiconductor device and its packaging during… 
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Related topics

Related topics

39 relations
Alexander CoucoulasBall bondingCompliant bondingConformal coating

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Challenges of ultimate ultra-fine pitch process with gold wire & copper wire in QFN packages
Since several years ago, many semiconductors companies have invested a lot of efforts and resources in the wire bonding… 
2009
2009
A Micropower $\Delta\Sigma$-Based Interface ASIC for a Capacitive 3-Axis Micro-Accelerometer
In this paper, a micropower interface IC for a capacitive 3-axis micro-accelerometer is presented. The IC is implemented in a 0… 
Review
2007
Review
2007
Ge-on-SOI-Detector/Si-CMOS-Amplifier Receivers for High-Performance Optical-Communication Applications
In this paper, an overview and assessment of high-performance receivers based upon Ge-on-silicon-on-insulator (Ge-on-SOI… 
Highly Cited
2007
Highly Cited
2007
Reliability of Cu Wire Bonding to Al Metallization
The use of Cu wire for thermosonic ball bonding presents several advantages over Au wire. These advantages include significant… 
2007
2007
Design, Fabrication, and Measurement of Benzocyclobutene Polymer Zero-Level Packaging for Millimeter-Wave Applications
This paper presents a whole benzocyclobutene (BCB) membrane zero-level packaging using a wafer-level BCB bonding technique and a… 
Highly Cited
2006
Highly Cited
2006
Evaluation of board-level reliability of electronic packages under consecutive drops
2006
2006
Facing the challenge of designing for Cu/low-k reliability
Highly Cited
2005
Highly Cited
2005
ESD engineering of nitride-based LEDs
GaN-based light emitting diodes (LEDs) with p-cap layers grown at various temperatures were fabricated. It was found that the LED… 
2004
2004
Integrated packaging of a 1 kW switching module using a novel planar integration technology
A metal-oxide-semiconductor field-effect transistor (MOSFET) (rating at 500 V/24 A) half-bridge power switching subassembly with… 
1979
1979
Degradation mechanism of Nb 3 Sn composite wires under tensile strain at 4.2K
Bronze-processed Nb 3 Sn composite wire conductors exhibit changes in their superconducting parameters when strained in tension… 
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