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Vendor serial number:ID:Pt:Subarachnoid drain:Nom

Known as: Rivenditore, numero di serie:ID:Pt:Drenaggio subaracnoideo:Nom, Vendor serial number:Identifier:Point in time:Subarachnoid drain:Nominal, número de serie del distribuidor:intradérmico:punto en el tiempo:drenaje subaracnoideo:Nominal: 
National Institutes of Health

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Drain deviceIdentifierNomNumbers

Papers overview

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2017
2017
Subperiosteal Drainage versus Subdural Drainage in the management of Chronic Subdural Hematoma (A Comparative Study).
INTRODUCTION Symptomatic chronic subdural hematomas (CSDH) remain one of the most frequent diagnoses in current neurosurgical… 
2015
2015
Leak or Fistula After Sleeve Gastrectomy: Treatment with Pigtail Drain by the Rendezvous Technique
After a sleeve gastrectomy, a leak or fistula is a serious complication. Laparoscopic drainage, drainage under US or CT scan… 
2014
2014
Performance Enhancement of Flip-Chip Packaged AlGaN/GaN HEMTs Using Active-Region Bumps-Induced Piezoelectric Effect
We experimentally investigated the impact of different bump patterns on the output electrical characteristics of flip-chip (FC… 
2014
2014
InGaAs MOSFETs with InP drain
InGaAs MOSFETs may find usage in both digital and analogue applications. While most efforts so far have focused on digital… 
Highly Cited
2012
Highly Cited
2012
Time- and Field-Dependent Trapping in GaN-Based Enhancement-Mode Transistors With p-Gate
This letter describes an extensive analysis of the time- and field-dependent trapping processes that occur in GaN-based gate… 
Highly Cited
2012
Highly Cited
2012
Assessment of Ambipolar Behavior of a Tunnel FET and Influence of Structural Modifications
In the present work, comprehensive investigation of the ambipolar characteristics of two silicon (Si) tunnel field-effect… 
2010
2010
Schottky-Ohmic Drain AlGaN/GaN Normally Off HEMT With Reverse Drain Blocking Capability
In this letter, we propose an AlGaN/GaN normally off high-electron mobility transistor (HEMT) with reverse drain blocking… 
1987
1987
An analytic I—V model for lightly doped drain (LDD) MOSFET devices
An analytic I-V model for lightly doped drain (LDD) MOSFET devices is presented. In this model, the n-region is considered to be… 
1985
1985
An analytical one-dimensional model for lightly doped drain (LDD) MOSFET devices
An analytic one-dimensional model for lightly doped drain (LDD) MOSFET devices is presented. This model decomposes the LDD device… 
Highly Cited
1980
Highly Cited
1980
Design and characteristics of the lightly doped drain-source (LDD) insulated gate field-effect transistor
The LDD structure, where narrow, self-aligned n-regions are introduced between the channel and the n+source-drain diffusions of… 
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