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Drain device
Known as:
DRAIN
National Institutes of Health
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Related topics
Related topics
22 relations
Bacteria identified:Prid:Pt:Drain:Nom:Aerobic culture
Body Fluid Discharge
Class:Type:Pt:Wound drain device:Nom
Discharge, body substance
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Narrower (4)
Chest Tubes
Penrose drain
Wound drain
sump drain
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Review
2015
Review
2015
Abdominal drainage versus no drainage post-gastrectomy for gastric cancer.
Zhen Wang
,
Junqiang Chen
,
Ka Su
,
Z. Dong
Cochrane Database of Systematic Reviews
2015
Corpus ID: 205196719
BACKGROUND Gastrectomy remains the primary therapeutic method for resectable gastric cancer. Thought of as an important measure…
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Highly Cited
2008
Highly Cited
2008
Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity Scattering
C. Alexander
,
G. Roy
,
A. Asenov
IEEE Transactions on Electron Devices
2008
Corpus ID: 28716607
A comprehensive simulation study of random-dopant-induced drain current variability is presented for a series of well-scaled n…
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Highly Cited
2008
Highly Cited
2008
A Quasi-Two-Dimensional Compact Drain–Current Model for Undoped Symmetric Double-Gate MOSFETs Including Short-Channel Effects
F. Lime
,
B. Iñíguez
,
O. Moldovan
IEEE Transactions on Electron Devices
2008
Corpus ID: 9565955
A drain-current model for undoped symmetric double-gate MOSFETs is proposed. Channel-length modulation and drain-induced barrier…
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Highly Cited
2004
Highly Cited
2004
High inversion current in silicon nanowire field effect transistors
S. Koo
,
A. Fujiwara
,
Jinhua Han
,
E. Vogel
,
C. Richter
,
J. Bonevich
2004
Corpus ID: 55263936
Silicon nanowire (SiNW) field effect transistors (FETs) with channel widths down to 20 nm have been fabricated by a conventional…
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Highly Cited
2004
Highly Cited
2004
Partially depleted SOI MOSFETs under uniaxial tensile strain
Wei Zhao
,
Jianli He
,
R. Belford
,
L. Wernersson
,
A. Seabaugh
IEEE Transactions on Electron Devices
2004
Corpus ID: 46118394
The effects of tensile uniaxial strain on the DC performance of partially-depleted silicon-on-insulator n and p-channel MOSFETs…
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Highly Cited
2000
Highly Cited
2000
Evaluation of surface and groundwater management strategies for drained sulfidic soil using numerical simulation models
B. Blunden
,
B. Indraratna
2000
Corpus ID: 59443531
The effective management of acid sulfate soils is a major issue for many coastal regions in Australia. Simulations were conducted…
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Highly Cited
1998
Highly Cited
1998
Transistor records of excitable neurons from rat brain
S. Vassanelli
,
P. Fromherz
1998
Corpus ID: 18401265
Field effect transistors form electrical junctions with excitable nerve cells from rat brain which are cultured on oxidized…
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Highly Cited
1996
Highly Cited
1996
Calibration and Evaluation of Subsurface Drainage Component of RZWQM V.2.5
P. Singh
,
R. Kanwar
,
K. Johnsen
,
L. Ahuja
1996
Corpus ID: 21482476
This study was designed to calibrate and evaluate the subsurface drain flow component of the Root Zone Water Quality Model (RZWQM…
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Highly Cited
1987
Highly Cited
1987
A model for the electric field in lightly doped drain structures
K. Mayaram
,
Jack C. Lee
,
Chenming Hu
IEEE Transactions on Electron Devices
1987
Corpus ID: 20430596
A semi-quantitative model for the lateral channel electric field in LDD MOSFET's has been developed. This model is derived from a…
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Highly Cited
1984
Highly Cited
1984
Transient drain current and propagation delay in SOI CMOS
Hyung Kyu Lim
,
J. Fossum
IEEE Transactions on Electron Devices
1984
Corpus ID: 44040206
The transient overshoot in drain current that occurs in thin-film SOI (Si-on-SiO2) MOSFET's because of the floating body in…
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