Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity Scattering

@article{Alexander2008RandomDopantInducedDC,
  title={Random-Dopant-Induced Drain Current Variation in Nano-MOSFETs: A Three-Dimensional Self-Consistent Monte Carlo Simulation Study Using “Ab Initio” Ionized Impurity Scattering},
  author={C. L. Alexander and Gareth Roy and A. Asenov},
  journal={IEEE Transactions on Electron Devices},
  year={2008},
  volume={55},
  pages={3251-3258}
}
A comprehensive simulation study of random-dopant-induced drain current variability is presented for a series of well-scaled n-channel MOSFETs representative of the 90-, 65-, 45-, 35-, and 22-nm technology nodes. Simulations are performed at low and high drain biases using both 3-D drift diffusion (DD) and 3-D Monte Carlo (MC). The ensemble MC simulator incorporates an ldquo ab initiordquo treatment of ionized impurity scattering through the real-space trajectories of the carriers in the… CONTINUE READING
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