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Transistor–transistor logic
Known as:
FJ series
, TTL logic
, Transistor Transistor Logic
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Transistor–transistor logic (TTL) is a class of digital circuits built from bipolar junction transistors (BJTs) and resistors. It is called…
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Related topics
Related topics
49 relations
74181
AND-OR-Invert
Acorn Microcomputer
Arithmetic logic unit
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Broader (1)
Digital electronics
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2004
Highly Cited
2004
N-type Schottky barrier source/drain MOSFET using ytterbium silicide
Shiyang Zhu
,
Jingde Chen
,
+7 authors
D. Kwong
IEEE Electron Device Letters
2004
Corpus ID: 40155006
Ytterbium silicide, for the first time, was used to form the Schottky barrier source/drain (S/D) of N-channel MOSFETs. The device…
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Highly Cited
2004
Highly Cited
2004
Design and programming of embedded multiprocessors: an interface-centric approach
Pieter van der Wolf
,
Erwin de Kock
,
T. Henriksson
,
W. Kruijtzer
,
G. Essink
International Conference on Hardware/Software…
2004
Corpus ID: 6406770
We present design technology for the structured design and programming of embedded multi-processor systems. It comprises a task…
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Highly Cited
2004
Highly Cited
2004
35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS
P. Chidambaram
,
Brian A. Smith
,
+11 authors
D. T. Grider
Digest of Technical Papers. Symposium on VLSI…
2004
Corpus ID: 20198429
Results from the best reported PMOS transistor at a 37 nm gate length (Lg) built on a process with a recessed SiGe epitaxial…
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1999
1999
Transistor–Transistor Logic
D. Wyland
1999
Corpus ID: 60578515
The sections in this article are 1 Transistor–Transistor Logic Circuit Design 2 TTL: An Improvement on DTL 3 The…
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Highly Cited
1989
Highly Cited
1989
Hot-electron InGaAs/InP heterostructure bipolar transistors with f/sub T/ of 110 GHz
R. Nottenburg
,
Y. Chen
,
M. Panish
,
D. Humphrey
,
R. Hamm
IEEE Electron Device Letters
1989
Corpus ID: 41946479
A hot-electron InGaAs/InP heterostructure bipolar transistor (HBT) is discussed. A unity-current-gain cutoff frequency of 110 GHz…
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Highly Cited
1986
Highly Cited
1986
Quantum-well resonant tunneling bipolar transistor operating at room temperature
F. Capasso
,
S. Sen
,
A. Gossard
,
A. L. Hutchinson
,
J. English
IEEE Electron Device Letters
1986
Corpus ID: 7533637
The first resonant tunneling bipolar transistor (RBT) is reported. The AlGaAs/GaAs wide-gap emitter device, grown by molecular…
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Review
1985
Review
1985
Performance studies of a Prolog machine architecture
T. Dobry
,
A. Despain
,
Y. Patt
International Symposium on Computer Architecture
1985
Corpus ID: 14367172
The PLM is a co-processor a r c h i t e c t u r e designed for efficient execu t ion of Prolog programs. It is the first p ro to…
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Highly Cited
1978
Highly Cited
1978
Wafer-scale integration-a fault-tolerant procedure
R. Aubusson
,
I. Catt
IEEE Journal of Solid-State Circuits
1978
Corpus ID: 36425907
Considers a new approach to full-slice technology in relation to existing procedures for achieving this goal. Under external…
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Highly Cited
1970
Highly Cited
1970
Microwave properties of Schottky-barrier field-effect transistors
P. Wolf
1970
Corpus ID: 62219570
The microwave properties of silicon Schottky-barrier field-effect transistor(MESFET'S) with a gate-length of one micrometer are…
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1968
1968
Transistor-transistor logic with high packing density and optimum performance at high inverse gain
B. Murphy
,
V. Glinski
1968
Corpus ID: 61414741
The advantages of using thin epitaxial layers for bipolar integrated circuits are discussed in this paper. Using epitaxial layer…
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