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Substrate (electronics)
Known as:
Substrate
, Substrate (semiconductor)
Substrate (also called a wafer) is a solid (usually planar) substance onto which a layer of another substance is applied, and to which that second…
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14 relations
AN/UYK-44
Diode
Epitaxy
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Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2009
Highly Cited
2009
COMPARATIVE INVESTIGATION OF RESONANCE CHARACTERISTICS AND ELECTRICAL SIZE OF THE DOUBLE-SIDED SRR, BC-SRR AND CONVENTIONAL SRR TYPE METAMATERIALS FOR VARYING SUBSTRATE PARAMETERS
E. Ekmekci
,
G. Turhan‐Sayan
2009
Corpus ID: 13714646
This paper introduces a planar µ-negative (MNG) metamaterial structure, called double-sided split ring resonator (DSRR), which…
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Highly Cited
2004
Highly Cited
2004
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
N. Wu
,
Qingchun Zhang
,
+10 authors
N. Balasubramanian
2004
Corpus ID: 55028092
Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using metalorganic-chemical-vapor-deposited HfO2…
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Highly Cited
2003
Highly Cited
2003
Proline catalyzed aldol reactions in aqueous micelles: an environmentally friendly reaction system
Yiyuan Peng
,
Q. Ding
,
Zucheng Li
,
P. Wang
,
Jin‐Pei Cheng
2003
Corpus ID: 98158248
Highly Cited
1999
Highly Cited
1999
Micro object handling under SEM by vision-based automatic control
T. Kasaya
,
H. Miyazaki
,
S. Saito
,
Tomomasa Sato
Proceedings IEEE International Conference on…
1999
Corpus ID: 27224828
There is a great demand for the highly accurate and reliable arrangement of micro objects smaller than 100 /spl mu/m in order to…
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Highly Cited
1998
Highly Cited
1998
Macroporous Silicon: A Two‐Dimensional Photonic Bandgap Material Suitable for the Near‐Infrared Spectral Range
A. Birner
,
U. Grüning
,
+5 authors
U. Gösele
1998
Corpus ID: 54557069
We have fabricated macroporous silicon and proved its applicability as a two-dimensional photonic bandgap material in the near…
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Highly Cited
1990
Highly Cited
1990
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
M. Melloch
,
N. Ōtsuka
,
J. Woodall
,
A. C. Warren
,
J. Freeouf
1990
Corpus ID: 96007064
We have grown film structures by molecular beam epitaxy which include GaAs buffer layers grown at low substrate temperatures (250…
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Highly Cited
1987
Highly Cited
1987
Hot-electron effects in Silicon-on-insulator n-channel MOSFET's
J. Colinge
IEEE Transactions on Electron Devices
1987
Corpus ID: 41702799
Hot-electron degradation has been measured in short-channel bulk and SOI MOSFET's. The presence of a floating substrate in the…
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Highly Cited
1987
Highly Cited
1987
Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's
G. Sai-Halasz
,
M. Wordeman
,
+9 authors
R. Dennard
IEEE Electron Device Letters
1987
Corpus ID: 40213295
The first device performance results are presented from experiments designed to assess FET technology feasibility in the 0.1-µm…
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Highly Cited
1982
Highly Cited
1982
Backgating in GaAs MESFET's
C. Kocot
,
C. Stolte
IEEE Transactions on Electron Devices
1982
Corpus ID: 8588392
The phenomenon of backgating in GaAs depletion mode MESFET devices is investigated. The origin of this effect is electron…
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Highly Cited
1942
Highly Cited
1942
The estimation of serum inorganic phosphate and " acid " and " alkaline " phosphatase activity.
G. Shinowara
,
L. M. Jones
,
H. Reinhart
1942
Corpus ID: 51821865
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