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Substrate (electronics)
Known as:
Substrate
, Substrate (semiconductor)
Substrate (also called a wafer) is a solid (usually planar) substance onto which a layer of another substance is applied, and to which that second…
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14 relations
AN/UYK-44
Diode
Epitaxy
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Highly Cited
2004
Highly Cited
2004
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
N. Wu
,
Qingchun Zhang
,
+10 authors
N. Balasubramanian
2004
Corpus ID: 55028092
Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using metalorganic-chemical-vapor-deposited HfO2…
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Highly Cited
2002
Highly Cited
2002
Embedded timing analysis: a soc infrastructure
S. Tabatabaei
,
A. Ivanov
IEEE Design & Test of Computers
2002
Corpus ID: 23219114
This SoC infrastructure core is a flexible, scalable, and highly accurate embedded time interval analyzer (ETIA), used to measure…
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Highly Cited
1992
Highly Cited
1992
Enumeration of bacteria which cleave or demethylate dimethylsulfoniopropionate in the Caribbean Sea
P. Visscher
,
Díaz
,
B. Taylor
1992
Corpus ID: 55686533
Populations of d~methylsulfoniopropionate (DMSP) degrading bacteria were enumerated in Caribbean Sea waters using Most Probable…
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Highly Cited
1990
Highly Cited
1990
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
M. Melloch
,
N. Ōtsuka
,
J. Woodall
,
A. C. Warren
,
J. Freeouf
1990
Corpus ID: 96007064
We have grown film structures by molecular beam epitaxy which include GaAs buffer layers grown at low substrate temperatures (250…
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Highly Cited
1987
Highly Cited
1987
Design and experimental technology for 0.1-µm gate-length low-temperature operation FET's
G. Sai-Halasz
,
M. Wordeman
,
+9 authors
R. Dennard
IEEE Electron Device Letters
1987
Corpus ID: 40213295
The first device performance results are presented from experiments designed to assess FET technology feasibility in the 0.1-µm…
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Highly Cited
1982
Highly Cited
1982
Backgating in GaAs MESFET's
C. Kocot
,
C. Stolte
IEEE Transactions on Electron Devices
1982
Corpus ID: 8588392
The phenomenon of backgating in GaAs depletion mode MESFET devices is investigated. The origin of this effect is electron…
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Highly Cited
1981
Highly Cited
1981
Al on GaAs(110) interface: Possibility of adatom cluster formation
A. Zunger
1981
Corpus ID: 119566048
A reexamination of the experimental data and previous electronic-structure calculations on the prototype Schottky system Al/GaAs…
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Highly Cited
1980
Highly Cited
1980
Stability of performance and interfacial problems in GaAs MESFET's
T. Itoh
,
H. Yanai
IEEE Transactions on Electron Devices
1980
Corpus ID: 31873517
Interface effects in GaAs MESFET's were investigated from the viewpoint of stability of performance. It was clarified, on the…
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Highly Cited
1975
Highly Cited
1975
The Influence of Stored Energy at Step Discontinuities on the Behavior of Surface-Wave Gratings
Robert
,
LI M.
,
John Melngailis
IEEE Transactions on Sonics and Ultrasonics
1975
Corpus ID: 13560140
Abstracf-Energy storage at a groove edge, or similar discontinuity in the substrate surface, produces a phase shift in a surface…
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Highly Cited
1942
Highly Cited
1942
The estimation of serum inorganic phosphate and " acid " and " alkaline " phosphatase activity.
G. Shinowara
,
L. M. Jones
,
H. Reinhart
1942
Corpus ID: 51821865
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