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Diode

Known as: Crystal diode, Thermionic diode, Shockley's equation 
In electronics, a diode is a two-terminal electronic component that conducts primarily in one direction (asymmetric conductance); it has low (ideally… 
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Related topics

Related topics

50 relations
555 timer ICBIZMACBandgap voltage referenceBiasing

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2011
Highly Cited
2011
Analysis and Implementation of a Fixed-Frequency $LCLC$ Resonant Converter With Capacitive Output Filter
This paper presents the steady-state analysis of a fixed-frequency phase-shift LCLC resonant converter with a capacitive output… 
Highly Cited
2008
Highly Cited
2008
Trust Inference in Web-Based Social Networks Using Resistive Networks
By the immense growth of the Web-based social networks (WBSNs), the role of trust in connecting people together through WBSNs is… 
Highly Cited
2007
Highly Cited
2007
Procedures Used for Dynamically Laterally Loaded Pile Tests in a Centrifuge
Most of the experimental work carried on pile behavior on centrifuge has been limited to monotonic or cyclic loading, or both. As… 
Highly Cited
2007
Highly Cited
2007
Analysis of Parallel-Connected Asymmetrical Soft-Switching Converter
A new half-bridge converter with two current-doubler rectifiers is proposed. Two transformers are used in the proposed converter… 
Highly Cited
2007
Highly Cited
2007
Modified photoluminescence properties of rare-earth complex/polymer composite fibers prepared by electrospinning
Efficiently luminescent composite fibers of poly (vinyl pyrrolidone) (Mw≈1300000) and europium complex Eu(TTA)3(TPPO)2 (TTA is… 
2007
2007
A ZVS PWM Half-Bridge Voltage Source Inverter With Active Clamping
This paper presents a zero-voltage (pulsewidth modulation) half-bridge inverter with active voltage clamping using only a single… 
Highly Cited
1999
Highly Cited
1999
Heteroepitaxial Growth of SiC on Si(100) and (111) by Chemical Vapor Deposition Using Trimethylsilane
Heteroepitaxial growth of 3C‐SiC on Si by chemical vapor deposition has been investigated using the precursor trimethylsilane. To… 
1996
1996
Atomic‐scale structure and electronic properties of GaN/GaAs superlattices
We have investigated the atomic‐scale structure and electronic properties of GaN/GaAs superlattices produced by nitridation of a… 
Highly Cited
1994
Highly Cited
1994
Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °C
Polycrystalline silicon films have been deposited on glass substrates at 350 °C by radio‐frequency plasma‐enhanced chemical vapor… 
1982
1982
Auger recombination in quantum-well InGaAsP heterostructure lasers
Interband nonradiative Auger recombination in quantum-well InGaAsP/InP heterostructure lasers has been calculated. It is found… 
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