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Light hadrons from lattice QCD with light (u, d), strange and charm dynamical quarks
We present results of lattice QCD simulations with mass-degenerate up and down and mass-split strange and charm (Nf = 2 + 1 + 1) dynamical quarks using Wilson twisted mass fermions at maximal twist.Expand
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Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism
We have investigated the band structure of tensile-strained germanium using a 30 band k⋅p formalism. This multiband formalism allows to simultaneously describe the valence and conduction bands,Expand
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Dynamical twisted mass fermions with light quarks: simulation and analysis details
In a recent paper [ETMC, P. Boucaud et al., Phys. Lett. B 650 (2007) 304, hep-lat/0701012] we presented precise lattice QCD results of our European Twisted Mass Collaboration (ETMC). They wereExpand
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Computing K and D meson masses with Nf=2+1+1 twisted mass lattice QCD
We discuss the computation of the mass of the K and D mesons within the framework of N-f = 2 + 1 + 1 twisted mass lattice QCD from a technical point of view. These quantities are essential, alreadyExpand
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All-Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities
emitter into an effi cient emitter-like III–V semiconductors. There is no need a priori to reach the direct-band gap regime to demonstrate a Ge laser source. The fi rst Ge laser demonstration wasExpand
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Two-dimensional photonic crystals with large complete photonic band gaps in both TE and TM polarizations.
Photonic crystals exhibiting a photonic band gap in both TE and TM polarizations are particularly interesting for a better control of light confinement. The simultaneous achievement of large bandExpand
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Tensile-strained germanium microdisks
We show that a strong tensile strain can be applied to germanium microdisks using silicon nitride stressors. The transferred strain allows one to control the direct band gap emission that is shiftedExpand
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Recent advances in germanium emission [Invited]
The optical properties of germanium can be tailored by combining strain engineering and n-type doping. In this paper, we review the recent progress that has been reported in the study of germaniumExpand
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Enhanced photoluminescence of heavily n-doped germanium
We show that a significant enhancement of the direct band gap photoluminescence can be achieved at room temperature in bulk Ge and Ge-on-insulator heavily n-doped by gas immersion laser doping. TheExpand
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Direct Band Gap Germanium Microdisks Obtained with Silicon Nitride Stressor Layers
Germanium is an ideal candidate to achieve a monolithically integrated laser source on silicon. Unfortunately bulk germanium is an indirect band gap semiconductor. Here, we demonstrate that a thickExpand
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