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Light hadrons from lattice QCD with light (u, d), strange and charm dynamical quarks
We present results of lattice QCD simulations with mass-degenerate up and down and mass-split strange and charm (Nf = 2 + 1 + 1) dynamical quarks using Wilson twisted mass fermions at maximal twist.
Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism
We have investigated the band structure of tensile-strained germanium using a 30 band k⋅p formalism. This multiband formalism allows to simultaneously describe the valence and conduction bands,
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process.
TLDR
The mechanical and optical properties of tensile strained Ge microstructures directly fabricated in a state-of-the art complementary metal-oxide-semiconductor fabrication line can be realistically applied to the fabrication of a prototype platform for monolithic integration of near infrared laser sources for silicon photonics.
Low-momentum ghost dressing function and the gluon mass
We study the low-momentum ghost propagator Dyson-Schwinger equation in the Landau gauge, assuming for the truncation a constant ghost-gluon vertex, as it is extensively done, and a simple model for a
All‐Around SiN Stressor for High and Homogeneous Tensile Strain in Germanium Microdisk Cavities
emitter into an effi cient emitter-like III–V semiconductors. There is no need a priori to reach the direct-band gap regime to demonstrate a Ge laser source. The fi rst Ge laser demonstration was
Two-dimensional photonic crystals with large complete photonic band gaps in both TE and TM polarizations.
TLDR
Photonic band gap calculations show that two different designs of two-dimensional photonic crystals patterned in high refractive index thin silicon slabs offer large complete photonic band gaps deltaomega/omega larger than 10% between first and second photonic bands.
Recent advances in germanium emission [Invited]
The optical properties of germanium can be tailored by combining strain engineering and n-type doping. In this paper, we review the recent progress that has been reported in the study of germanium
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