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Substrate (electronics)

Known as: Substrate, Substrate (semiconductor) 
Substrate (also called a wafer) is a solid (usually planar) substance onto which a layer of another substance is applied, and to which that second… 
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14 relations
AN/UYK-44DiodeEpitaxyPaper disc

Papers overview

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Review
2008
Review
2008
Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)
  • P. Ye
  • 2008
  • Corpus ID: 45648280
Lacking a suitable gate insulator, practical GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) have remained all… 
Highly Cited
2004
Highly Cited
2004
Carbon nanotube transistor operation at 2.6 Ghz
We present the first demonstration of single-walled carbon nanotube transistor operation at microwave frequencies. To measure the… 
Highly Cited
2004
Highly Cited
2004
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
Metal-oxide-semiconductor capacitors were fabricated on germanium substrates by using metalorganic-chemical-vapor-deposited HfO2… 
Highly Cited
2004
Highly Cited
2004
Integrating in situ reef-top reflectance spectra with Landsat TM imagery to aid shallow-tropical benthic habitat mapping
This manuscript presents the use of hyperspectral in situ reflectance measurements evaluated above the water surface to train a… 
Highly Cited
1999
Highly Cited
1999
Observation of light propagation in photonic crystal optical waveguides with bends
We observed the light propagation in 2-D photonic crystal waveguides with bends, which were composed of densely-packed holes… 
Highly Cited
1998
Highly Cited
1998
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
The etch pit density of organometallic vapor phase epitaxy (OMVPE)-grown GaN on sapphire was discovered to reduce drastically by… 
Highly Cited
1997
Highly Cited
1997
Mechanism of and Defect Formation in the Self-Assembly of Polymeric Polycation−Montmorillonite Ultrathin Films
Positively charged polydiallyldimethylammonium chloride, P, was found to bind strongly to the surface of anionic montmorrillonite… 
Highly Cited
1990
Highly Cited
1990
Formation of arsenic precipitates in GaAs buffer layers grown by molecular beam epitaxy at low substrate temperatures
We have grown film structures by molecular beam epitaxy which include GaAs buffer layers grown at low substrate temperatures (250… 
Highly Cited
1982
Highly Cited
1982
Backgating in GaAs MESFET's
The phenomenon of backgating in GaAs depletion mode MESFET devices is investigated. The origin of this effect is electron… 
Highly Cited
1942
Highly Cited
1942
The estimation of serum inorganic phosphate and " acid " and " alkaline " phosphatase activity.
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