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Stress migration
Stress Migration is a failure mechanism that often occurs in IC metallization (aluminum, copper). Voids form as result of vacancy migration driven by…
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Related topics
Related topics
3 relations
High-temperature operating life
Hot-carrier injection
Broader (1)
Semiconductor device fabrication
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Exploration of baking temperature effects on 28 nm BEOL reliability
Xiangfu Zhao
,
W. Chien
Microelectronics and reliability
2017
Corpus ID: 29607998
Review
2008
Review
2008
Simulation of Migration Effects in Solder Bumps
K. Weide-Zaage
IEEE transactions on device and materials…
2008
Corpus ID: 26267336
Due to miniaturization, the width of interconnects, as well as the dimensions of solder bumps, decreases. As a result of the…
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2007
2007
Dynamic void formation in a DD-copper-structure with different metallization geometry
K. Weide-Zaage
,
D. Dalleau
,
Y. Danto
,
H. Frémont
Microelectronics and reliability
2007
Corpus ID: 40353685
2007
2007
A Detailed Qualitative Model for the Programming Physics of Silicided Polysilicon Fuses
T. Doorn
IEEE Transactions on Electron Devices
2007
Corpus ID: 31455013
This paper presents a detailed qualitative model for the programming physics of 90-nm silicided polysilicon fuses that is derived…
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2005
2005
Effect of test condition and stress free temperature on the electromigration failure of Cu dual damascene submicron interconnect line-via test structures
A. Roy
,
C. Tan
,
Rakesh Kumar
,
Xian Tong Chen
Microelectronics and reliability
2005
Corpus ID: 35084564
2005
2005
Stress migration reliability of wide Cu interconnects with gouging vias
Y. K. Lim
,
R. Arijit
,
+4 authors
D. Vigar
IEEE International Reliability Physics Symposium…
2005
Corpus ID: 30525147
Stress migration (SM) reliability of wide copper (Cu) interconnects with gouging vias was studied using a via chain structure…
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2005
2005
Stress migration lifetime for Cu interconnects with CoWP-only cap
J. Gambino
,
C. Johnson
,
+6 authors
T. Levin
IEEE transactions on device and materials…
2005
Corpus ID: 15651343
Stress migration lifetime is characterized for a CoWP-only cap process (i.e., no dielectric cap) and a CoWP + SiN cap process…
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1997
1997
Stress in copper films for interconnects
S. Riedel
,
J. Rober
,
S. Schulz
,
T. Gessner
European Workshop Materials for Advanced…
1997
Corpus ID: 9923102
1989
1989
A statistical analysis of seismicity in Italy: The clustering properties
P. Gasperini
,
F. Mulargia
1989
Corpus ID: 129365894
Abstract The clustering properties of Italian seismicity are analyzed statistically on the basis of the Istituto Nazionale di…
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1989
1989
Extrametricality, The Cycle, And Turkish Word Stress
C. Barker
1989
Corpus ID: 142613171
Assuming cyclic stress, Turkish supports a highly restrictive version of extrametricality.
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