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Stress migration

Stress Migration is a failure mechanism that often occurs in IC metallization (aluminum, copper). Voids form as result of vacancy migration driven by… Expand
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Papers overview

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2009
2009
We describe the new full-field transmission x-ray microscope (TXM) for automated cryo-tomography and nano-spectroscopy which is… Expand
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Review
2008
Review
2008
  • K. Weide-Zaage
  • IEEE Transactions on Device and Materials…
  • 2008
  • Corpus ID: 26267336
Due to miniaturization, the width of interconnects, as well as the dimensions of solder bumps, decreases. As a result of the… Expand
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2007
2007
  • T. Doorn
  • IEEE Transactions on Electron Devices
  • 2007
  • Corpus ID: 31455013
This paper presents a detailed qualitative model for the programming physics of 90-nm silicided polysilicon fuses that is derived… Expand
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2005
2005
Variations in the mechanical properties of copper related to plating chemistry and copper thickness are found to control stress… Expand
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2005
2005
Stress migration (SM) reliability of wide copper (Cu) interconnects with gouging vias was studied using a via chain structure… Expand
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Highly Cited
2004
Highly Cited
2004
Thermal effects are becoming a limiting factor in high-performance circuit design due to the strong temperature-dependence of… Expand
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2004
2004
Stress migration (SM) or stress-induced voiding experiments were conducted for two back-end-of-line (BEoL) technologies: Cu/FTEOS… Expand
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2004
2004
  • C. Zhai, H. Yao, +6 authors K. Taylor
  • IEEE International Reliability Physics Symposium…
  • 2004
  • Corpus ID: 26029545
Stress migration (SM) or stress-induced voiding (SIV) experiments were conducted for two BEoL (Back End of Line) technologies: Cu… Expand
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1998
1998
Higher-resolution, larger-diagonal active-matrix liquid crystal displays (AMLCDs) will require the use of low-resistivity gate… Expand
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1989
1989
Abstract The clustering properties of Italian seismicity are analyzed statistically on the basis of the Istituto Nazionale di… Expand
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