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Stress migration

Stress Migration is a failure mechanism that often occurs in IC metallization (aluminum, copper). Voids form as result of vacancy migration driven by… Expand
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Papers overview

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Highly Cited
2012
Highly Cited
2012
Through-silicon via is a critical element for three-dimensional (3D) integration of devices in multilevel stack structures… Expand
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2012
2012
This paper studies the electromigration (EM) failure of interconnect structure and solder joint in a wafer level chip scale… Expand
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2009
2009
We describe the new full-field transmission x-ray microscope (TXM) for automated cryo-tomography and nano-spectroscopy which is… Expand
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2005
2005
Variations in the mechanical properties of copper related to plating chemistry and copper thickness are found to control stress… Expand
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2004
2004
Thermal effects are becoming a limiting factor in high-performance circuit design due to the strong temperature-dependence of… Expand
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2004
2004
Stress migration (SM) or stress-induced voiding experiments were conducted for two back-end-of-line (BEoL) technologies: Cu/FTEOS… Expand
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2004
2004
Stress migration (SM) or stress-induced voiding (SIV) experiments were conducted for two BEoL (Back End of Line) technologies: Cu… Expand
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2002
2002
We have carried out a detailed study of the relevant process techniques by using high-pressure annealing in order to embed Cu… Expand
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1998
1998
Higher-resolution, larger-diagonal active-matrix liquid crystal displays (AMLCDs) will require the use of low-resistivity gate… Expand
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1989
1989
Abstract The clustering properties of Italian seismicity are analyzed statistically on the basis of the Istituto Nazionale di… Expand
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