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High-temperature operating life

Known as: HTOL, High temperature operating life 
High-temperature operating life (HTOL) is a reliability test applied to integrated circuits (ICs) to determine their intrinsic reliability. This test… 
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Related topics

Related topics

15 relations
Boundary scanBuilt-in self-testCharge pumpDuty cycle

Broader (1)

Reliability engineering

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
RRAM technology and its embedded potential on IoT applications
A highly reliable, substrate independent, and cost-effective (2 extra-masks) HfO 2 -based Resistive-Random-Access-Memory (RRAM… 
Review
2016
Review
2016
BTI induced dispersion: Challenges and opportunities for SRAM bit cell optimization
One of major CMOS reliability concern for advanced nodes is the Bias Temperature Instability mechanism. In addition to the native… 
2014
2014
Advances in reliability and operation space of high-voltage GaN power devices on Si substrates
GaN-on-Si power devices have advantages in both performance and the potential for low cost and high volume production. Advances… 
2010
2010
Device-Level Vacuum Packaging for RF MEMS
For specific RF applications, where the use of MEMS is highly attractive, cost-effective reliable packaging is one of the primary… 
2006
2006
GaN-On-Si Reliability: A Comparative Study Between Process Platforms
GaN-on-Si transistors are put through an extensive suite of reliability tests in order to accurately assess the drift… 
Review
2006
Review
2006
Integration of carbon nanotubes with semiconductor technology: fabrication of hybrid devices by III–V molecular beam epitaxy
We review a number of essential issues regarding the integration of carbon nanotubes in semiconductor devices for electronics… 
2006
2006
Effects of pre-bump probing and bumping processes on eutectic solder bump electromigration
2004
2004
Effects of substrate metallization on the degradation of flip chip interconnects under electromigration
Effects of substrate metallization, i.e. Ni/Au vs. Cu-OSP, are studied to characterize the electromigration resistance of under… 
2001
2001
Conversion of the under bump metallurgy into intermetallics: the impact on flip chip reliability
2001
2001
Exceeding 60-Year Life Expectancy from an Electronic Energy Meter
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