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Strained silicon directly on insulator
Known as:
SSDOI
Strained silicon directly on insulator (SSDOI) is a procedure developed by IBM which removes the silicon germanium layer in the strained silicon…
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Related topics
Related topics
2 relations
Integrated circuit
Broader (1)
Semiconductor device fabrication
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Cp 2 TiCH-CONTAINING CATALYST FOR
L. Gilliom
2017
Corpus ID: 59499833
A difunctional monomer containing a strained olefin ring and an unstrained olefin, ether group or other group polymerizable with…
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2016
2016
Century Journey from Synthetic Organic Chemistry to Mathematical Stereochemistry through Chemoinformatics S
S. Fujita
,
A. Ashrafi
2016
Corpus ID: 59391550
My half-century journey started from synthetic organic chemistry. During the first stage of my journey, my interest in…
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2014
2014
Strain Quantification Analysis of Epitaxial SiGe on SOI by Nanobeam Diffraction (NBD)
L. Juntao
,
K. Cheng
,
+7 authors
J. Gaudiello
2014
Corpus ID: 27985063
Strain engineering technology is now routinely integrated in the wafer fabrication process to increase the carrier mobility and…
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2014
2014
Fabrication and Characteristics of Self-Supporting Rolled-Up InGaAs/GaAs Microtubes Array on GaAs (100)
Zhihong Pan
,
Qi Wang
,
+5 authors
Yongqing Huang
Asia Communications and Photonics conference and…
2014
Corpus ID: 115206633
Self-supporting In<inf>0.2</inf>Ga<inf>0.8</inf>As (15 nm)/GaAs (35 nm) microtubes array was fabricated on GaAs (100) through…
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2014
2014
ELECTRON TRANSPORT IN ULTRATHIN-BODY FULLY DEPLETED N-MOSFETS FABRICATED ON STRAINED SILICON DIRECTLY ON INSULATOR WITH BODY THICKNESS RANGING FROM 2 NM TO 25 NM
Silicon Directly
,
L. Gomez
2014
Corpus ID: 85559556
The electron effective mobility in ultrathin-body (UTB) n-MOSFETs fabricated on Ge-free 30% strained-Si directly on insulator…
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2010
2010
Strained Ge1-xSnx thin film on Ge (100) with low temperature Ge buffer layer
I. Yu
,
K.Y. Wu
,
+5 authors
O. Pchelyakov
IEEE International Nanoelectronics Conference
2010
Corpus ID: 2772091
Alloys of germanium (Ge) and tin (Sn) get much research attention because of possible direct band gap semiconductors. In this…
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2007
2007
Strained silanes as Lewis acids for the construction of carbon-carbon bonds
N. R. Perl
2007
Corpus ID: 94321262
2006
2006
Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator
I. Åberg
2006
Corpus ID: 108540815
The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device…
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2005
2005
The effects of strain on carrier transport in thin and ultra-thin SOI MOSFETs
I. Lauer
2005
Corpus ID: 45680773
Thin-body MOSFET geometries such as fully-depleted SO1 and double-gate devices are attractive because they can offer superior…
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1999
1999
Structural Defects Due to Growth Interruptions in ZnSe-Based Heterostructures
I. Sedova
,
S. Sorokin
,
A. Sitnikova
,
R. V. Zolotareva
,
S. Ivanov
1999
Corpus ID: 17162901
Abstract : It has been shown that the growth interruption peffomed for calibration of VI-II flux ratio leads to the additional…
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