Strained silicon directly on insulator
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High-performance strained Silicon-On-Insulator (sSOI) nanowire (NW) transistors with gate length and NW width down to 15 nm are… Expand Strain engineering has been in the heart of CMOS technology for over a decade. However, the effectiveness of conventional strain… Expand The electron effective mobility in ultrathin-body n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge… Expand The hole inversion-layer mobility of strained-SiGe homo- and heterostructure-on-insulator in ultrathin-body MOSFETs is modeled by… Expand This paper describes a biaxial-uniaxial hybridized strained CMOS technology achieved through selective uniaxial relaxation of… Expand The combination of channel mobility-enhancement techniques such as strain engineering with nonclassical MOS device architectures… Expand In this work, we study both FD- and PD-SSOI with aggressive T/sub Si/ of up to 135 nm for 14% SSOI (14% Ge equivalent strain). We… Expand Hole transport is studied in ultrathin body (UTB) MOSFETs in strained-Si directly on insulator (SSDOI) with a Si thickness down… Expand Electron and hole mobility enhancements are studied in Ge-free strained silicon directly on insulator fabricated by a bond and… Expand A tensile-strained Si layer was transferred to form an ultra-thin (<20 nm) strained Si directly on insulator (SSDOI) structure… Expand