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Strained silicon directly on insulator

Known as: SSDOI 
Strained silicon directly on insulator (SSDOI) is a procedure developed by IBM which removes the silicon germanium layer in the strained silicon… 
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Related topics

Related topics

2 relations
Integrated circuit

Broader (1)

Semiconductor device fabrication

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Aggressively scaled strained silicon directly on insulator (SSDOI) FinFETs
Strain engineering has been in the heart of CMOS technology for over a decade. However, the effectiveness of conventional strain… 
2012
2012
Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS
High-performance strain-engineered ETSOI devices are reported. Three methods to boost the performance, namely contact strain… 
Highly Cited
2007
Highly Cited
2007
Physics-Based Modeling of Hole Inversion-Layer Mobility in Strained-SiGe-on-Insulator
The hole inversion-layer mobility of strained-SiGe homo- and heterostructure-on-insulator in ultrathin-body MOSFETs is modeled by… 
2007
2007
Analysis of Compressively Strained GaInAsP–InP Quantum-Wire Electro-Absorption Modulators
Performance of compressively strained (CS) GaInAsP-InP quantum-wire (QWR) electro-absorption modulators (EAMs) is theoretically… 
2006
2006
Strain-Enhanced CMOS Through Novel Process-Substrate Stress Hybridization of Super-Critically Thick Strained Silicon Directly on Insulator (SC-SSOI)
This paper describes a biaxial-uniaxial hybridized strained CMOS technology achieved through selective uniaxial relaxation of… 
2006
2006
Ultrathin-body strained-Si and SiGe heterostructure-on-insulator MOSFETs
The combination of channel mobility-enhancement techniques such as strain engineering with nonclassical MOS device architectures… 
2006
2006
Transport in thin-body MOSFETs fabricated in strained Si and strained Si/SiGe heterostructures on insulator
The combination of channel mobility enhancement techniques such as strain engineering, with non-classical MOS device… 
2006
2006
Integration of Local Stress Techniques with Strained-Si Directly on Insulator (SSDOI) Substrates
Various local stress techniques have been integrated on strained-Si directly on insulator (SSDOI) substrates, including dual… 
2005
2005
Transport and leakage in super-critical thickness strained silicon directly on insulator MOSFETs with strained Si thickness up to 135 nm
In this work, we study both FD- and PD-SSOI with aggressive T/sub Si/ of up to 135 nm for 14% SSOI (14% Ge equivalent strain). We… 
2005
2005
Co-integrated dual strained channels on fully depleted sSDOI CMOSFETs with HfO/sub 2//TiN gate stack down to 15nm gate length
We report an original dual channel fully depleted CMOSFET architecture on insulator (DCOI) co-integrating strained-Si (nMOS) and… 
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