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Strain engineering
Known as:
Dual Stress Liner
, Dual stress
, Strained engineering
Strain engineering refers to a general strategy employed in semiconductor manufacturing to enhance device performance. Performance benefits are…
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Related topics
Related topics
6 relations
Electron mobility
Lattice constant
Microprocessor
Semiconductor
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Implementation of Shear Deformable Thin-Walled Beam Element for Flexible Multibody Dynamics
J. B. Jonker
2017
Corpus ID: 55048236
This paper presents a geometrically nonlinear beam finite element that captures non-uniform torsion and flexuraltorsional…
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2015
2015
Depleted Nanocrystal-Oxide Heterojunctions for High-Sensitivity Infrared Detection
Xian-an Cao
2015
Corpus ID: 19371220
Abstract : The goal of this project is to explore a new IR photodetector architecture based on a depleted ZnO/PbS QD…
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2012
2012
Strain Engineering for Optical Gain in Germanium
P. Boucaud
,
M. E. Kurdi
,
+10 authors
R. Ossikovski
2012
Corpus ID: 114956855
Room temperature optical gain and lasing have been recently demonstrated in germanium. One key ingredient to obtain positive gain…
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2011
2011
cmos structure and method using a dual stress layer which is self-aligned
ホイロン・チュー
,
デウォン・ヤン
2011
Corpus ID: 115182905
2010
2010
Advances in Scattering Probes for Materials
P. Evans
,
S. Billinge
2010
Corpus ID: 16041482
Recent advances in x-ray and neutron sources, optics, and scattering methods are heralding a new age in the study of the…
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2010
2010
Strained Silicon Technology: Mobility Enhancement and Improved Short Channel Effect Performance by Stress Memorization Technique on nFET Devices
Chih-Cheng Lu
,
Jiun-Jia Huang
,
Wun-Cheng Luo
,
T. Hou
,
T. Lei
2010
Corpus ID: 54991202
Historically, the number of transistors on an integrated circuit has doubled approximately every 2 years according to the well…
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2008
2008
Total Ionizing Dose Effects on Strained ${\rm HfO}_{2}$-Based nMOSFETs
Hyunwoo Park
,
S. K. Dixit
,
+4 authors
S. Thompson
IEEE Transactions on Nuclear Science
2008
Corpus ID: 26533881
Radiation-induced charge trapping and mobility degradation are measured on uniaxially stressed HfO2-based nMOSFETs. Controlled…
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Highly Cited
2005
Highly Cited
2005
High performance 65 nm SOI technology with enhanced transistor strain and advanced-low-K BEOL
W. Lee
,
A. Waite
,
+76 authors
N. Kepler
IEEE InternationalElectron Devices Meeting…
2005
Corpus ID: 22372112
A high performance 65 nm SOI CMOS technology is presented. Dual stress liner (DSL), embedded SiGe, and stress memorization…
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2004
2004
Nutritional value of strained yoghurt produced by traditional method
A. K. Seckin
2004
Corpus ID: 89065438
Strained yoghurts were produced by straining of set type yoghurt in the cotton bag (dimension 33x36 cm) that contains 15 x 22…
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2003
2003
Modelling of silo discharge and filling problems by the material point method
Z. Więckowski
2003
Corpus ID: 55684457
Abstract: The problems of flow of a granular material in the processes of silo discharge and filling are considered. Dynamic, two…
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