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Lattice constant

Known as: Lattice spacing, Lattice parameter, Lattice constants 
The lattice constant, or lattice parameter, refers to the physical dimension of unit cells in a crystal lattice. Lattices in three dimensions… 
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Related topics

Related topics

10 relations
Crystal structureEpitaxyGrapheneInteratomic potential

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2010
Highly Cited
2010
Nanostructured Pt-Fe/C cathode catalysts for direct methanol fuel cell: The effect of catalyst composition
Highly Cited
2010
Highly Cited
2010
Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications
GaAsyP1-y anion-sublattice compositionally graded buffers and device structures were grown directly on Si(100) substrates by way… 
Highly Cited
2005
Highly Cited
2005
Pseudoelasticity of Single Crystalline Cu Nanowires Through Reversible Lattice Reorientations
Molecular dynamics simulations are carried out to analyze the structure and mechanical behavior of Cu nanowires with lateral… 
Highly Cited
2004
Highly Cited
2004
Characterization of crystalline structure of ball-milled nano-Ni-Zn-ferrite by rietveld method
Highly Cited
2004
Highly Cited
2004
Structural characteristics of ferroelectric phase transformations in single-domain epitaxial films
Structural characteristics of phase transformations in epitaxial ferroelectric films are analyzed via a Landau–Devonshire… 
Highly Cited
2003
Highly Cited
2003
Extremely low threshold-current-density InGaAs quantum-well lasers with emission wavelength of 1215-1233 nm
Extremely low threshold-current-density In0.4Ga0.6As quantum-well (QW) lasers have been realized in the 1215–1233 nm wavelength… 
Highly Cited
2002
Highly Cited
2002
Phase relations, transparency and conductivity in Ga2O3SnO2ZnO
Highly Cited
1999
Highly Cited
1999
Polariton gap in a superconductor–dielectric superlattice
Highly Cited
1998
Highly Cited
1998
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
The etch pit density of organometallic vapor phase epitaxy (OMVPE)-grown GaN on sapphire was discovered to reduce drastically by… 
Highly Cited
1994
Highly Cited
1994
The invariant line and precipitate morphology in Fcc-Bcc systems
Second-phase precipitates in many face-centered cubic-body-centered cubic (fcc-bcc) systems(e.g., Ni-Cr, Cu-Cr, Fe-Cu, and… 
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