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Lattice constant

Known as: Lattice spacing, Lattice parameter, Lattice constants 
The lattice constant, or lattice parameter, refers to the physical dimension of unit cells in a crystal lattice. Lattices in three dimensions… 
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Related topics

Related topics

10 relations
Crystal structureEpitaxyGrapheneInteratomic potential

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2010
Highly Cited
2010
Nanostructured Pt-Fe/C cathode catalysts for direct methanol fuel cell: The effect of catalyst composition
Highly Cited
2010
Highly Cited
2010
Characterization of Metamorphic GaAsP/Si Materials and Devices for Photovoltaic Applications
GaAsyP1-y anion-sublattice compositionally graded buffers and device structures were grown directly on Si(100) substrates by way… 
Highly Cited
2006
Highly Cited
2006
Stress-Induced Martensitic Phase Transformation in Intermetallic Nickel Aluminum Nanowires
Atomistic simulations are utilized to demonstrate a stress-induced martensitic phase transformation in intermetallic nickel… 
Highly Cited
2004
Highly Cited
2004
Characterization of crystalline structure of ball-milled nano-Ni-Zn-ferrite by rietveld method
Highly Cited
2003
Highly Cited
2003
Effects of impurities on the lattice parameters of GaN
The effects on the lattice parameters due to incorporation of impurities in GaN are evaluated using first-principles… 
Highly Cited
2002
Highly Cited
2002
Phase relations, transparency and conductivity in Ga2O3SnO2ZnO
Highly Cited
2001
Highly Cited
2001
Structure, Wettability, and Frictional Properties of Phenyl-Terminated Self-Assembled Monolayers on Gold
Alkanethiols possessing terminal phenyl groups (C6H5(CH2)nSH, n = 12−15) were adsorbed onto the surface of gold to afford phenyl… 
Highly Cited
1999
Highly Cited
1999
Raman spectroscopy on single- and multi-walled nanotubes under high pressure
Abstract.The pressure dependence of the high-energy Raman modes in single- and multi-walled carbon nanotubes was measured in the… 
Highly Cited
1998
Highly Cited
1998
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
The etch pit density of organometallic vapor phase epitaxy (OMVPE)-grown GaN on sapphire was discovered to reduce drastically by… 
Highly Cited
1998
Highly Cited
1998
Magnetic pinning of the vortex lattice by arrays of submicrometric dots
We have prepared regular square arrays of Ni and Ag dots with typical diameter and thickness approaching characteristic low-${T}_… 
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