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Electron mobility
Known as:
Field-effect mobility
, Mobility
, Hole mobility
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In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an…
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Related topics
Related topics
31 relations
Anomalous photovoltaic effect
Bismuth antimonide
Brownian motion
Doping (semiconductor)
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2012
2012
Upper limit of two-dimensional hole gas mobility in strained Ge/SiGe heterostructures
Toshiyuki Tanaka
,
Y. Hoshi
,
K. Sawano
,
N. Usami
,
Y. Shiraki
,
K. Itoh
2012
Corpus ID: 123107237
High two-dimensional hole gas (2DHG) mobility (μ2DHG>10000cm2/Vs at T 5000cm2/Vs at room temperature is presented.
2012
2012
ADAPTING TO THE RANGE OF AN ELECTRIC VEHICLE – THE RELATION OF EXPERIENCE TO SUBJECTIVELY AVAILABLE MOBILITY RESOURCES
T. Franke
,
P. Cocron
,
Franz Bühler
,
I. Neumann
,
J. Krems
2012
Corpus ID: 51963551
Range of electric vehicles has been identified as a major barrier for acceptance of electric mobility within studies with…
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2011
2011
InxGa1-xSb channel p-metal-oxide-semiconductor field effect transistors: Effect of strain and heterostructure design
A. Nainani
,
Ze Yuan
,
+6 authors
K. Saraswat
2011
Corpus ID: 2028405
InxGa1-xSb is an attractive candidate for high performance III-V p-metal-oxide-semiconductor field effect transistors (pMOSFETs…
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Highly Cited
2008
Highly Cited
2008
Organic bulk heterojunction solar cells using poly(2,5-bis(3-tetradecyllthiophen-2-yl)thieno[3,2,-b]thiophene)
Jack E. Parmer
,
A. Mayer
,
+4 authors
I. McCulloch
2008
Corpus ID: 14906101
By transitioning to semicrystalline polymers, the performance of polymer-based solar cells has recently increased to over 5% [W…
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2008
2008
Microstructure of Oligofluorene Asymmetric Derivatives in Organic Thin Film Transistors
Q. Yuan
,
S. Mannsfeld
,
+4 authors
Zhenan Bao
2008
Corpus ID: 55273779
In organic thin film transistors (OTFT), modifying the molecular chemical structure affects the molecular packing and thin film…
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2007
2007
High mobility p-channel HFETs using strained Sb-based materials
J. B. Boos
,
B. R. Bennett
,
+4 authors
B. V. Shanabrook
2007
Corpus ID: 55425805
Antimonide-based p-channel HFETs with a 0.25 mum gate length have been fabricated with an InAlSb/AlGaSb barrier and a strained In…
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Highly Cited
2006
Highly Cited
2006
Anisotropic field-effect mobility of pentacene thin-film transistor: Effect of rubbed self-assembled monolayer
Shou-Zheng Weng
,
Wei-Shan Hu
,
C.-H. Kuo
,
Y. Tao
,
Liang-Jen Fan
,
Yaw-Wen Yang
2006
Corpus ID: 122530734
Enhanced and anisotropic field-effect mobility of thin-film transistors based on pentacene was obtained on a substrate covered…
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2006
2006
Engineering strained silicon-looking back and into the future
T. Acosta
,
S. Sood
IEEE potentials
2006
Corpus ID: 39594444
The purpose of this article is to explain the basics behind straining and report on the current process technologies available to…
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2003
2003
Very low defects and high performance Ge-on-insulator p-MOSFETs with Al/sub 2/O/sub 3/ gate dielectrics
C. Huang
,
M.Y. Yang
,
+5 authors
D. Kwong
Symposium on VLSI Technology. Digest of Technical…
2003
Corpus ID: 39286361
We demonstrate for the first time high quality and dislocation free Ge-on-insulator (GOI) p-MOSFETs with Al/sub 2/O/sub 3/ gate…
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Highly Cited
1992
Highly Cited
1992
Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering process
Keh-Yung Y. Cheng
,
K. Hsieh
,
J. N. Baillargeon
1992
Corpus ID: 64504124
The lateral quantum wells formed in vertical (GaAs)n/(InAs)n and (GaP)n/(InP)n short‐period superlattices (SPS) grown on…
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