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Electron mobility

Known as: Field-effect mobility, Mobility, Hole mobility 
In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an… 
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Related topics

Related topics

31 relations
Anomalous photovoltaic effectBismuth antimonideBrownian motionDoping (semiconductor)

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2010
Highly Cited
2010
Tailoring side chains of low band gap polymers for high efficiency polymer solar cells
Highly Cited
2007
Highly Cited
2007
Air-stable n-channel organic thin-film transistors with high field-effect mobility based on N,N′-bis(heptafluorobutyl)-3,4:9,10-perylene diimide
The thin-film transistor characteristics of n-channel organic semiconductor, N,N′-bis(2,2,3,3,4,4,4-heptafluorobutyl)-perylene… 
Highly Cited
2006
Highly Cited
2006
Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates
We report on the demonstration of enhancement-mode n-channel GaN high-voltage metal-oxide field-effect transistor (MOSFET… 
Highly Cited
2006
Highly Cited
2006
Effect of surface free energy in gate dielectric in pentacene thin-film transistors
The surface free energy of a dielectric has a strong influence on the performance of pentacene thin-film transistors. Research… 
Highly Cited
2004
Highly Cited
2004
Monolithic Integration of Carbon Nanotube Devices with Silicon MOS Technology
An integrated circuit combining single-walled carbon nanotube (SWNT) devices with n-channel metal oxide semiconductor (NMOS… 
Highly Cited
2004
Highly Cited
2004
Short channel effects in regioregular poly(thiophene) thin film transistors
The effects of the physical channel length on the current-voltage characteristics of thin film transistors (TFTs) made with poly… 
Highly Cited
1994
Highly Cited
1994
Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °C
Polycrystalline silicon films have been deposited on glass substrates at 350 °C by radio‐frequency plasma‐enhanced chemical vapor… 
Highly Cited
1992
Highly Cited
1992
Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering process
The lateral quantum wells formed in vertical (GaAs)n/(InAs)n and (GaP)n/(InP)n short‐period superlattices (SPS) grown on… 
Highly Cited
1989
Highly Cited
1989
2,3,7,8,12,13,17,18-Octakis(.beta.-hydroxyethyl)porphyrin (octaethanolporphyrin) and its liquid crystalline derivatives: synthesis and characterization
A synthesis is reported of 2,3,7,8,12,13,17,18-octakis({beta}-hydroxyethyl)porphyrin (octaethanolporphyrin) and a series of its… 
Highly Cited
1985
Highly Cited
1985
Ultrapure, high mobility organic photoconductors
This contribution demonstrates that high charge carrier mobility (<400 cm2/Vs) is an inherent property ofultrapure organic… 
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