Electron mobility

Known as: Field-effect mobility, Mobility, Hole mobility 
In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an… (More)
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Papers overview

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Review
2017
Review
2017
Perovskite photovoltaic cells have seen a remarkable rise in power conversion efficiencies over a period of only a few years… (More)
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Highly Cited
2011
Highly Cited
2011
In this paper, background describing THz monolithic integrated circuits using InP HEMT is presented. This three-terminal… (More)
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Highly Cited
2008
Highly Cited
2008
We have achieved mobilities in excess of 200,000 cm2 V−1 s−1 at electron densities of ∼2×1011 cm−2 by suspending single layer… (More)
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Highly Cited
2008
Highly Cited
2008
We have found that there is a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade… (More)
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Highly Cited
2006
Highly Cited
2006
A GaN/ultrathin InGaN/GaN heterojunction has been used to provide a back-barrier to the electrons in an AlGaN/GaN high-electron… (More)
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Highly Cited
2006
Highly Cited
2006
We have carried out systematic experiments of the electrical reliability of state-of-the-art GaN HEMTs. We have found that… (More)
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Highly Cited
1983
Highly Cited
1983
New carrier mobility data for both arsenic- and boron-doped silicon are presented in the high doping range. The data definitely… (More)
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Highly Cited
1982
Highly Cited
1982
An analytical expression has been derived for the electron and hole mobility in silicon based on both experimental data and… (More)
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Highly Cited
1980
Highly Cited
1980
Accurate modeling of MOS devices requires quantitative knowledge of carrier mobilities in surface inversion and accumulation… (More)
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Highly Cited
1979
Highly Cited
1979
The effective mobility of electrons in the inverted 〈100〉 Si surface was measured over a wide range of temperatures, gate… (More)
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