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Electron mobility

Known as: Field-effect mobility, Mobility, Hole mobility 
In solid-state physics, the electron mobility characterizes how quickly an electron can move through a metal or semiconductor, when pulled by an… 
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Related topics

Related topics

31 relations
Anomalous photovoltaic effectBismuth antimonideBrownian motionDoping (semiconductor)

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2016
Highly Cited
2016
Intrinsic electron mobility limits in β-Ga2O3
By systematically comparing experimental and theoretical transport properties, we identify the polar optical phonon scattering as… 
Highly Cited
2015
Highly Cited
2015
First Demonstration of Amplification at 1 THz Using 25-nm InP High Electron Mobility Transistor Process
We report the first ever terahertz monolithic integrated circuit amplifier based on 25-nm InP high electron mobility transistor… 
Highly Cited
2008
Highly Cited
2008
Efficacy of Electron Mobility Models in Hybrid-PIC Hall Thruster Simulations
The cross-field electron mobility in Hall thrusters is known to be enhanced by wall collisionality and turbulent plasma… 
Highly Cited
2007
Highly Cited
2007
High-mobility window for two-dimensional electron gases at ultrathin AlN∕GaN heterojunctions
High-conductivity two-dimensional electron gases at AlN∕GaN heterojunctions are reported. The sheet densities can be tuned from… 
Highly Cited
2006
Highly Cited
2006
AlGaN/GaN high electron mobility transistors with InGaN back-barriers
A GaN/ultrathin InGaN/GaN heterojunction has been used to provide a back-barrier to the electrons in an AlGaN/GaN high-electron… 
Highly Cited
2005
Highly Cited
2005
Device model for the operation of polymer/fullerene bulk heterojunction solar cells
We have developed a numerical device model that consistently describes the current-voltage characteristics of polymer:fullerene… 
Highly Cited
2002
Highly Cited
2002
Block-by-Block Growth of Single-Crystalline Si/SiGe Superlattice Nanowires
Heterojunction and superlattice formation is essential for many potential applications of semiconductor nanowires in nanoscale… 
Highly Cited
2000
Highly Cited
2000
Doping and Electrical Transport in Silicon Nanowires
Single-crystal n-type and p-type silicon nanowires (SiNWs) have been prepared and characterized by electrical transport… 
Highly Cited
1982
Highly Cited
1982
Electron and hole mobilities in silicon as a function of concentration and temperature
An analytical expression has been derived for the electron and hole mobility in silicon based on both experimental data and… 
Highly Cited
1980
Highly Cited
1980
Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces
Accurate modeling of MOS devices requires quantitative knowledge of carrier mobilities in surface inversion and accumulation… 
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