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Single event upset
Known as:
Single event upsets
, SEU
, Single-event upset
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A single event upset (SEU) is a change of state caused by one single ionizing particle (ions, electrons, photons...) striking a sensitive node in a…
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Related topics
Related topics
30 relations
Beetle (ASIC)
Borophosphosilicate glass
Dynamic random-access memory
ECC memory
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Broader (1)
Digital electronics
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2015
2015
Mitigating Single-Event Upsets
Jameel Hussein
,
G. Swift
2015
Corpus ID: 10618597
www.xilinx.com 1 © Copyright 2012 Xilinx, Inc. Xilinx, the Xilinx logo, Artix, ISE, Kintex, Spartan, Virtex, Zynq, and other…
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Highly Cited
2009
Highly Cited
2009
Single event upset and multiple cell upset modeling in commercial bulk 65 nm CMOS SRAMs and flip-flops
S. Uznanski
,
G. Gasiot
,
P. Roche
,
C. Tavernier
,
J. Autran
European Conference on Radiation and Its Effects…
2009
Corpus ID: 47414721
A new proprietary Monte-Carlo simulation code dedicated to the heavy-ion cross-section prediction has been developed. The code is…
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2008
2008
Single event upset modeling with nuclear reactions in nanoscale electronics
M. Turowski
,
A. Fedoseyev
,
A. Raman
,
K. Warren
International Conference on Mixed Design of…
2008
Corpus ID: 7101445
In modern nano-scale technologies, circuits are increasingly sensitive to various kinds of perturbations. Soft errors, a concern…
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2007
2007
Single Event Upset Detection and Correction
Jawar Singh
,
J. Mathew
,
Mohammad Hosseinabady
,
D. Pradhan
10th International Conference on Information…
2007
Corpus ID: 15499474
This paper proposes a low cost solution to detect and correct a transient faults in registers of a design. The proposed method…
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Highly Cited
2007
Highly Cited
2007
Multiple-Bit Upset Analysis in 90 nm SRAMs: Heavy Ions Testing and 3D Simulations
D. Giot
,
P. Roche
,
G. Gasiot
,
R. Harboe-Sørensen
IEEE Transactions on Nuclear Science
2007
Corpus ID: 43348618
SEU and MBU cross-sections are measured with heavy ions for commercial 90 nm single port and dual port SRAMs. SEU and MBU rates…
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Highly Cited
2005
Highly Cited
2005
Fault tolerant solid state mass memory for space applications
G. Cardarilli
,
M. Ottavi
,
S. Pontarelli
,
M. Re
,
A. Salsano
IEEE Transactions on Aerospace and Electronic…
2005
Corpus ID: 10967208
In this paper, an innovative fault tolerant solid state mass memory (FTSSMM) architecture is described. Solid state mass memories…
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Highly Cited
2004
Highly Cited
2004
A pulsão romântica e as ciências humanas no ocidente
L. F. Duarte
2004
Corpus ID: 142155222
A cultura ocidental moderna articula-se em torno da tensao entre um universalismo primordial e o seu constante contraponto rom…
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1984
1984
Single Event Upset Testing with Relativistic Heavy Ions
T. Criswell
,
P. Measel
,
K. Wahlin
IEEE Transactions on Nuclear Science
1984
Corpus ID: 1710859
Two bipolar devices, the AMD 2901B microprocessor and the AMD 27LS00 256-bit RAM, have been tested for single event upset using…
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Highly Cited
1984
Highly Cited
1984
Neutron Generated Single-Event Upsets in the Atmosphere
R. Silberberg
,
C. Tsao
,
J. R. Letaw
IEEE Transactions on Nuclear Science
1984
Corpus ID: 41192094
Heavy cosmic ray nuclei are mostly attenuated with a shielding of 50 g/cm2 atmospheric gas. However, the shielding acts as a…
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1981
1981
Single Event Upsets in NMOS Microprocessors
C. S. Guenzer
,
A. Campbell
,
P. Shapiro
IEEE Transactions on Nuclear Science
1981
Corpus ID: 46330380
Three advanced 16-bit NMOS microprocessors have been observed to suffer single event upset at a rate varying between one upset…
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