Silicon-germanium

Known as: Sgoi, Silicon germanide, SiGe 
SiGe (/ˈsɪɡiː/ or /ˈsaɪdʒiː/), or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the… (More)
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Papers overview

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Review
2017
Review
2017
The unique fingerprint spectra of volatile organic compounds for breath analysis and toxic industrial chemicals make an mm-wave… (More)
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2010
2010
“Extreme environment” electronics represent an important niche market in the trillion dollar global electronics industry and span… (More)
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Highly Cited
2008
Highly Cited
2008
Heterojunction tunneling field-effect transistors (HTFETs) that use strained-silicon/strained-germanium type-II staggered band… (More)
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2008
2008
Phase and amplitude controlling ICs realized in a low cost standard silicon process are demonstrated. The design of several ICs… (More)
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Highly Cited
2006
Highly Cited
2006
We propose that the operational wavelength of waveguided Si-based photonic integrated circuits and optoelectronic integrated… (More)
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Highly Cited
2005
Highly Cited
2005
Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high… (More)
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2005
2005
Pulsed-XeCl excimer laser crystallization of germanium (Ge) and silicon–germanium (SiGe) alloy films formed on quartz glass… (More)
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2004
2004
A silicon-germanium ultra-broadband saturable Bragg reflector with sub-picosecond recovery time is fabricated. Its performance is… (More)
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2002
2002
In the past few years, the cutoff frequency of silicon germanium bipolar transistors has nearly quadrupled for devices integrated… (More)
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1992
1992
The authors report a photodetector array based on an amorphous silicon-germanium alloy thin film. The detector array is designed… (More)
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