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Silicon-germanium

Known as: Sgoi, Silicon germanide, SiGe 
SiGe (/ˈsɪɡiː/ or /ˈsaɪdʒiː/), or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the… 
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Related topics

Related topics

14 relations
Bandgap voltage referenceCMOSChemical vapor depositionElectron mobility

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2013
Highly Cited
2013
A 90–100-GHz 4 $\times$ 4 SiGe BiCMOS Polarimetric Transmit/Receive Phased Array With Simultaneous Receive-Beams Capabilities
This paper presents a 4 × 4 transmit/receive (T/R) SiGe BiCMOS phased-array chip at 90-100 GHz with vertical and horizontal… 
Highly Cited
2010
Highly Cited
2010
A 0.13µm SiGe BiCMOS technology featuring fT/fmax of 240/330 GHz and gate delays below 3 ps
A 0.13 µm SiGe BiCMOS technology for millimeter wave applications is presented. This technology features high-speed HBTs (f<inf>T… 
Highly Cited
2008
Highly Cited
2008
Schottky Barrier Diode Circuits in Silicon for Future Millimeter-Wave and Terahertz Applications
This paper presents Schottky barrier diode circuits fully integrated in a 0.13- mum SiGe BiCMOS process technology. A… 
Highly Cited
2005
Highly Cited
2005
A 3.1 to 8.2 GHz direct conversion receiver for MB-OFDM UWB communications
  • A. IsmailA. Abidi
  • ISSCC. IEEE International Digest of Technical…
  • 2005
  • Corpus ID: 8732549
A direct conversion receiver for UWB applications operates in 3.1-8.2 GHz and gives a NF of 3.3-4.1 dB and a conversion gain of… 
Highly Cited
2005
Highly Cited
2005
Status and Direction of Communication Technologies - SiGe BiCMOS and RFCMOS
We present the status and direction of silicon semiconductor technologies targeted for applications such as wireless, networking… 
Highly Cited
2005
Highly Cited
2005
A SiGe BiCMOS 1ns fast hopping frequency synthesizer for UWB radio
A fully integrated multi-tone generator based on 2 PLL and a SSB mixer in 0.25/spl mu/m SiGe BiCMOS achieves frequency hopping… 
Highly Cited
2000
Highly Cited
2000
A broadband 10 GHz track-and-hold in Si/SiGe HBT technology
This paper presents a track-and-hold amplifier for sub-sampling communications applications based on a diode bridge design with… 
Highly Cited
1999
Highly Cited
1999
SELF-ORGANIZED REPLICATION OF 3D COHERENT ISLAND SIZE AND SHAPE IN MULTILAYER HETEROEPITAXIAL FILMS
Advances in modern science and technology continue to make electronic and optoelectronic devices faster and smaller. As its size… 
Highly Cited
1992
Highly Cited
1992
MBE-grown Si/SiGe HBTs with high beta , f/sub T/, and f/sub max/
Si/SiGe heterojunction bipolar transistors (HBTs) were fabricated by growing the complete layer structure with molecular beam… 
Highly Cited
1991
Highly Cited
1991
Parasitic energy barriers in SiGe HBTs
Parasitic energy barriers can easily be introduced during processing. Measurements and calculations of experimental n-p-n HBTs… 
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