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Silicon-germanium

Known as: Sgoi, Silicon germanide, SiGe 
SiGe (/ˈsɪɡiː/ or /ˈsaɪdʒiː/), or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the… 
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Related topics

Related topics

14 relations
Bandgap voltage referenceCMOSChemical vapor depositionElectron mobility

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2014
Highly Cited
2014
Importance of frequency-dependent grain boundary scattering in nanocrystalline silicon and silicon–germanium thermoelectrics
Nanocrystalline silicon and silicon–germanium alloys are promising thermoelectric (TE) materials that have achieved substantially… 
Review
2012
Review
2012
Silicon quantum electronics
This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based quantum dots, and it highlights the… 
Highly Cited
2010
Highly Cited
2010
A Fully-Integrated 16-Element Phased-Array Receiver in SiGe BiCMOS for 60-GHz Communications
A fully-integrated 16-element 60-GHz phased-array receiver is implemented in IBM 0.12-μm SiGe BiCMOS technology. The receiver… 
Highly Cited
2009
Highly Cited
2009
Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys
We discuss a model for the onsite matrix elements of the sp3d5s tight-binding Hamiltonian of a strained diamond or zinc-blende… 
Highly Cited
2006
Highly Cited
2006
Silicon Vertically Integrated Nanowire Field Effect Transistors
Silicon nanowires have received considerable attention as transistor components because they represent a facile route toward sub… 
Review
2003
Review
2003
Towards implementation of a nickel silicide process for CMOS technologies
Highly Cited
2003
Highly Cited
2003
A 90nm high volume manufacturing logic technology featuring novel 45nm gate length strained silicon CMOS transistors
This paper describes the details of a novel strained transistor architecture which is incorporated into a 90nm logic technology… 
Highly Cited
2002
Highly Cited
2002
Silicon-Germanium Heterojunction Bipolar Transistors
A SiGe HBT is disclosed. A collector region consists of a first ion implantation region in an active area as well as second and… 
Highly Cited
1988
Highly Cited
1988
Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy
We report the first SiGe base heterojunction Bipolar Transistors (HBT) The devices were fabricated using Molecular Beam Epitaxy… 
Highly Cited
1981
Highly Cited
1981
Phonon scattering at grain boundaries in heavily doped fine-grained silicon–germanium alloys
Thermocouples made from heavily doped n - and p-type silicon-germanium alloys are used in the nuclear powered thermoelectric… 
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