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Self-discharge
Known as:
Charge retention
, Loss of charge
Self-discharge is a phenomenon in batteries in which internal chemical reactions reduce the stored charge of the battery without any connection…
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Related topics
Related topics
4 relations
Float voltage
State of health
TI MSP430
Trickle charging
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2011
2011
Performance Comparison of Different Organic Molecular Floating-Gate Memories
S. Paydavosi
,
Hassen A. Abdu
,
G. Supran
,
V. Bulović
IEEE transactions on nanotechnology
2011
Corpus ID: 108715
In this paper, nanosegmented floating-gate memories consisting of a uniform set of identical organic dye molecules were…
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2010
2010
Patterning of inorganic electrets
V. Leonov
,
R. van Schaijk
IEEE transactions on dielectrics and electrical…
2010
Corpus ID: 6481954
A yearlong experiment has been conducted to prove that the field emission and atmospheric ions are responsible for discharging of…
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2008
2008
Model based state of charge estimation method for ultra-capacitor
Ren-gui Lu
,
Guoliang Wu
,
Rui Ma
,
Chunbo Zhu
IEEE Vehicle Power and Propulsion Conference
2008
Corpus ID: 38235091
Ultra-capacitor has the features of high power density, quick charge and long life cycle, which receives great attention in the…
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2007
2007
Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory
Chang-seok Kang
,
Jungdal Choi
,
+7 authors
Kinam Kim
IEEE International Reliability Physics Symposium…
2007
Corpus ID: 7069118
It was found that the charge loss behavior of TANOS (TaN-Al2O3-nitride-oxide-silicon) cells for NAND flash memory application is…
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2007
2007
Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory
Woei-Cherng Wu
,
T. Chao
,
+8 authors
J. Liou
IEEE Electron Device Letters
2007
Corpus ID: 30710920
In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory…
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2006
2006
Stabilization of positive charge in SiO/sub 2//Si/sub 3/N/sub 4/ electrets
V. Leonov
,
P. Fiorini
,
C. van Hoof
IEEE transactions on dielectrics and electrical…
2006
Corpus ID: 44526130
The stability of charge storage in electrets is a key parameter for their use in practical devices. For this purpose a new…
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2003
2003
Minimizing CTE losses in the WFC3 CCDs: Post Flash vs. Charge Injection
M. Giavalisco
2003
Corpus ID: 62882038
We present a comparative study of the relative merits of Post Flash and Charge Injection in mitigating the loss of charge…
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2002
2002
Scaling of Flash NVRAM to 10's of nm by Decoupling of Storage From Read/Sense Using
Arvind Kumar
,
S. Tiwari
2002
Corpus ID: 61301336
Conventional floating-gate flash memory structures have limited scalability due to nonscaling of insulators for charge retention…
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1985
1985
Buried storage electrode (BSE) cell for megabit DRAMs
M. Sakamoto
,
T. Katoh
,
+5 authors
K. Kobayashi
International Electron Devices Meeting
1985
Corpus ID: 39501196
The structure, fabrication and electrical characteristics of a new one-transistor one-capacitor MOS memory cell for megabit DRAMs…
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1980
1980
Charge retention of floating-gate transistors under applied bias conditions
S.T. Wang
IEEE Transactions on Electron Devices
1980
Corpus ID: 19665067
The nonvolatile memory-retention characteristics of floating-gate transistors with thin gate oxides are shown to be a strong…
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