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Self-discharge

Known as: Charge retention, Loss of charge 
Self-discharge is a phenomenon in batteries in which internal chemical reactions reduce the stored charge of the battery without any connection… 
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Related topics

Related topics

4 relations
Float voltageState of healthTI MSP430Trickle charging

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Transactive-Market-Based Operation of Distributed Electrical Energy Storage with Grid Constraints
In a transactive energy market, distributed energy resources (DERs) such as dispatchable distributed generators (DGs), electrical… 
2008
2008
Model based state of charge estimation method for ultra-capacitor
Ultra-capacitor has the features of high power density, quick charge and long life cycle, which receives great attention in the… 
2007
2007
Modeling of retention characteristics for metal and semiconductor nanocrystal memories
2007
2007
P-Type Floating Gate for Retention and P/E Window Improvement of Flash Memory Devices
A flash memory with a lightly doped p-type floating gate is proposed, which improves charge retention and programming/erase (P/E… 
2007
2007
Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory
It was found that the charge loss behavior of TANOS (TaN-Al2O3-nitride-oxide-silicon) cells for NAND flash memory application is… 
Highly Cited
2007
Highly Cited
2007
Numerical Simulation of Bottom Oxide Thickness Effect on Charge Retention in SONOS Flash Memory Cells
In this paper, bottom-oxide thickness (Tbo) and program/erase stress effects on charge retention in SONOS Flash memory cells with… 
2006
2006
SiO2∕Si3N4∕Al2O3 stacks for scaled-down memory devices: Effects of interfaces and thermal annealing
Effects of interfaces and thermal annealing on the electrical performance of the SiO2∕Si3N4∕Al2O3 (ONA) stacks in nonvolatile… 
Highly Cited
2000
Highly Cited
2000
A solution to the dead-layer problem in ionization and phonon-based dark matter detectors
Highly Cited
1991
Highly Cited
1991
Analog floating-gate synapses for general-purpose VLSI neural computation
A floating-gate-based synapse structure for neural computing fabricated by a standard double-polysilicon CMOS process is… 
Highly Cited
1954
Highly Cited
1954
C12(x,xn)C11 AND Al27(x, x2pn)Na24 CROSS SECTIONS AT HIGH ENERGIES
The ${\mathrm{C}}^{12}(x, xn){\mathrm{C}}^{11}$ and ${\mathrm{Al}}^{27}(x, x2pn){\mathrm{Na}}^{24}$ cross sections were measured… 
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