Numerical Simulation of Bottom Oxide Thickness Effect on Charge Retention in SONOS Flash Memory Cells

@article{Gu2007NumericalSO,
  title={Numerical Simulation of Bottom Oxide Thickness Effect on Charge Retention in SONOS Flash Memory Cells},
  author={Shaw-Hung Gu and Chih Wei Hsu and Tahui Wang and Wen-Pin Lu and Y. Ku and Chih-Yuan Lu},
  journal={IEEE Transactions on Electron Devices},
  year={2007},
  volume={54},
  pages={90-97}
}
In this paper, bottom-oxide thickness (Tbo) and program/erase stress effects on charge retention in SONOS Flash memory cells with FN programming are investigated. Utilizing a numerical analysis based on a multiple electron-trapping model to solve the Shockley-Read-Hall rate equations in nitride, we simulate the electron-retention behavior in a SONOS cell… CONTINUE READING