Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory

@article{Kang2007EffectsOL,
  title={Effects of Lateral Charge Spreading on the Reliability of TANOS (TaN/AlO/SiN/Oxide/Si) NAND Flash Memory},
  author={Changseok Kang and Jungdal Choi and Jaesung Sim and Changhyun Lee and Yoocheol Shin and Jintaek Park and Jongsun Sel and Sanghun Jeon and Youngwoo Park and Kinam Kim},
  journal={2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual},
  year={2007},
  pages={167-170}
}
It was found that the charge loss behavior of TANOS (TaN-Al2O3-nitride-oxide-silicon) cells for NAND flash memory application is highly dependent on the gate structures for the first time. The gate structures with trap layers remained on source and drain regions showed increased charge loss compared to the one with trap layers separated between different gate lines. The improvement by removing the trap layers between gate lines suggests that the lateral charge spreading via trap layers from the… CONTINUE READING
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