Selective area epitaxy

Known as: SAE 
Selective area epitaxy is the local growth of epitaxial layer through a patterned dielectric mask (typically SiO2 or [[Si3O4]]) deposited on a… (More)
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Topic mentions per year

Topic mentions per year

1976-2018
05010019762018

Papers overview

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2015
2015
Articles you may be interested in Effect of interwire separation on growth kinetics and properties of site-selective GaAs… (More)
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2011
2011
Using selective area epitaxy to produce three-dimensional GaN structures, two different concepts for laser diodes (LDs) with… (More)
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2011
2011
Highly uniform InGaN quantum dots (QDs) were grown by metal-organic chemical vapor deposition utilizing self-assembled diblock… (More)
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Highly Cited
2011
Highly Cited
2011
Wireless vehicular communication has the potential to enable a host of new applications, the most important of which are a class… (More)
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2006
2006
The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the… (More)
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2004
2004
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conductivity of the sample and was measured by determining the change in the optical sampling beam polarisation due to a linear… (More)
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2004
2004
Control over the location, distribution, and size of quantum dots is essential for the engineering of next-generation… (More)
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2002
2002
A study has been made of high power single lateral mode buried ridge lasers fabricated by selective area epitaxy. Several ridge… (More)
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1994
1994
We demonstrate a 6 frequency digitally tunable laser based on a waveguide grating router fabricated using selective area epitaxy… (More)
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1994
1994
Strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostructure lasers grown by selective-area MOCVD are described… (More)
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