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Poole–Frenkel effect
Known as:
Frenkel-Poole emission
, Poole-Frenkel effect
In solid-state physics, the Poole–Frenkel effect (also known as Frenkel-Poole emission) is a means by which an electrical insulator can conduct…
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1 relation
Broader (1)
Quantum mechanics
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Improvement of Resistive Switching Characteristics by Thermally Assisted Forming Process for $\hbox{SiO}_{2}$-Based Structure
Yu-Ting Chen
,
T. Chang
,
+8 authors
S. Sze
IEEE Electron Device Letters
2013
Corpus ID: 26373332
After high-temperature forming (HTF) and room-temperature forming treatments, the resistive switching behavior gets some…
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2011
2011
Local external signal shows larger effectiveness when imposed on the fast components in an array of inductively coupled Josephson junctions
Alireza Valizadeh
2011
Corpus ID: 117054938
An array of inductively coupled Josephson junctions is considered and it is shown that in presence of a fast impurity which is a…
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2010
2010
A novel low cost failure analysis technique for dielectric charging phenomenon in electrostatically actuated MEMS devices
U. Zaghloul
,
F. Coccetti
,
George J. Papaioannou
,
Patrick Pons
,
Robert Plana
IEEE International Reliability Physics Symposium
2010
Corpus ID: 20585956
This work presents a novel failure analysis technique for the dielectric charging phenomenon in electrostatically driven MEMS…
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2010
2010
Observation of the Poole-Frenkel effect in Tantalum Polymer capacitors
G. F. Alapatt
,
W. Harrell
,
Y. Freeman
,
P. Lessner
SoutheastCon
2010
Corpus ID: 33548182
I-V and I-time measurements to characterize the Polymer-Dielectric interface of Tantalum/Ta<inf>2</inf>O<inf>5</inf>/Polymer…
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2009
2009
Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices
D. Fugazza
,
D. Ielmini
,
S. Lavizzari
,
A. Lacaita
International Electron Devices Meeting
2009
Corpus ID: 22826715
Understanding the effect of size scaling on resistance window in phase-change memory (PCM) requires accurate models for…
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Highly Cited
2005
Highly Cited
2005
Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film
Chih-Yi Liu
,
Pei-Hsun Wu
,
+4 authors
Tseung-Yuen Tseng
IEEE Electron Device Letters
2005
Corpus ID: 43545345
Sputter-deposited Cr-doped SrZrO/sub 3/-based metal-insulator-metal structures exhibited bistable resistive reversible switching…
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2003
2003
Life Tests and TDDB Life Prediction Modeling of 50 nm Silicon Nitride Capacitors
G. Drandova
,
J. Beall
,
K. Decker
,
K. Salzman
2003
Corpus ID: 55034052
In this paper we report room temperature constant voltage life-time measurements of silicon nitride capacitors with 50 nm…
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2003
2003
Electrical properties of thin RF sputtered Ta2O5 films after constant current stress
M. Pecovska-Gjorgjevich
,
N. Novkovski
,
E. Atanassova
Microelectronics and reliability
2003
Corpus ID: 45306784
2003
2003
Leakage Current Behavior in Common I-Layer A-SI:H P-I-N Photodiode Arrays
J. Theil
2003
Corpus ID: 55903881
Hydrogenated amorphous silicon photodiode arrays form the basis of monolithic threedimensional integrated circuit sensor…
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1994
1994
Performance and off-state current mechanisms of low-temperature processed polysilicon thin-film transistors with liquid phase deposited SiO/sub 2/ gate insulator
C. Yeh
,
Shyue-Shyh Lin
,
Tzung-Zu Yang
,
Chun-lin Chen
,
Yu-Chi Yang
1994
Corpus ID: 59430469
Polysilicon thin-film transistors (poly-Si TFT's) with liquid phase deposition (LPD) silicon dioxide (SiO/sub 2/) gate insulator…
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