Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film

@article{Liu2005BistableRS,
  title={Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film},
  author={Chih-Yi Liu and Pei-Hsun Wu and A. Wang and Wen-Yueh Jang and Jien-Chen Young and Kuang-Yi Chiu and Tseung-Yuen Tseng},
  journal={IEEE Electron Device Letters},
  year={2005},
  volume={26},
  pages={351-353}
}
Sputter-deposited Cr-doped SrZrO/sub 3/-based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L… CONTINUE READING
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