Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film

  title={Bistable resistive switching of a sputter-deposited Cr-doped SrZrO/sub 3/ memory film},
  author={Chih-Yi Liu and Pei-Hsun Wu and A. Wang and Wen-Yueh Jang and Jien-Chen Young and Kuang-Yi Chiu and Tseung-Yuen Tseng},
  journal={IEEE Electron Device Letters},
Sputter-deposited Cr-doped SrZrO/sub 3/-based metal-insulator-metal structures exhibited bistable resistive reversible switching as observed under bias voltage and voltage pulse. The ratio of resistance of the two leakage states (high-H, low-L) was about five orders of magnitude. The conduction of the L-state satisfied Frenkel-Poole emission and that of the H-state followed ohmic mechanism, causing the resistance ratio to decrease with increasing bias voltage. The transition time of H- to L… CONTINUE READING
Highly Cited
This paper has 32 citations. REVIEW CITATIONS
23 Citations
6 References
Similar Papers


Publications citing this paper.
Showing 1-10 of 23 extracted citations


Publications referenced by this paper.
Showing 1-6 of 6 references

Effects of nitridation of silicon and repeated spike heating on the electrical properties of SrTiO gate dielectrics

  • C. Y. Liu, H. T. Lue, T. Y. Tseng
  • Appl. Phys. Lett., vol. 81, pp. 4416–4418, 2002.
  • 2002
1 Excerpt

Current-driven insulator-conductor transition and nonvolatile memory in chromium-doped SrTiO single crystals

  • Y. Watanabe, J. G. Bednorz, +4 authors S. J. Wind
  • Appl. Phys. Lett., vol. 78, pp. 3738–3740, 2001.
  • 2001

Electrical current distribution across a metal-insulator-metal structure during bistable switching

  • C. Rossel, G. I. Meijer, D. Bremauid, D. Widmer
  • J. Appl. Phys., vol. 90, pp. 2892–2898, 2001.
  • 2001
1 Excerpt

Reproducible switching effect in thin oxide films for memory applications

  • A. Beck, J. G. Bednorz, C. Gerber, C. Rossel, D. Widmer
  • Appl. Phys. Lett., vol. 77, pp. 139–141, 2000.
  • 2000
3 Excerpts

Bolometric response of superconducting YBa Cu O microbridges

  • C. J. Haung, C. Y. Chang, T. Y. Tseng
  • J. Appl. Phys., vol. 72, pp. 5786–5791, 1992.
  • 1992

Effect of bottom electrode materials and the electrical and reliability characteristics of (Ba, Sr) TiO capacitors

  • M. S. Tsai, S. C. Sun, T. Y. Tseng
  • IEEE Trans. Electron Devices, vol. 46, no. 12, pp…
  • 1829
2 Excerpts

Similar Papers

Loading similar papers…