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Memory cell (binary)
Known as:
1 bit memory cell
, Memory cell
, DRAM cell
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The memory cell is the fundamental building block of computer memory. The memory cell is an electronic circuit that stores one bit of binary…
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Related topics
Related topics
31 relations
Bubble memory
CARDboard Illustrative Aid to Computation
CPU cache
Combinational logic
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Broader (2)
Digital electronics
Electronic engineering
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2009
Highly Cited
2009
Printed Nonvolatile Memory for a Sheet-Type Communication System
T. Sekitani
,
K. Zaitsu
,
+4 authors
T. Someya
IEEE Transactions on Electron Devices
2009
Corpus ID: 27147481
By using state-of-the-art printing technologies and functional inks, we have demonstrated organic nonvolatile flexible random…
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Highly Cited
2006
Highly Cited
2006
An Ultra-Low-Power Memory With a Subthreshold Power Supply Voltage
Jinhui Chen
,
L. Clark
,
Tai-hua Chen
IEEE Journal of Solid-State Circuits
2006
Corpus ID: 36994801
A 512times13 bit ultra-low-power subthreshold memory is fabricated on a 130-nm process technology. The fabricated memory is fully…
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Highly Cited
2005
Highly Cited
2005
A Lower-Power Register File Based on Complementary Pass-Transistor Adiabatic Logic
Jianping Hu
,
Tiefeng Xu
,
Hong Li
IEICE Trans. Inf. Syst.
2005
Corpus ID: 9664023
This paper presents a novel low-power register file based on adiabatic logic. The register file consists of a storage-cell array…
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Highly Cited
2001
Highly Cited
2001
Data retention behavior of a SONOS type two-bit storage flash memory cell
W. Tsai
,
N. Zous
,
+6 authors
S. Gu
International Electron Devices Meeting. Technical…
2001
Corpus ID: 34486471
Data retention loss mechanisms in a 2-bit SONOS type flash EEPROM cell with hot electron programming and hot hole erase are…
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Highly Cited
2000
Highly Cited
2000
Curie point written magnetoresistive memory
R. Beech
,
J. Anderson
,
A. Pohm
,
J. Daughton
2000
Corpus ID: 49472806
Memory cells have been fabricated and tested to demonstrate storage in the pinned layer of a giant magnetoresistance (GMR) spin…
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Highly Cited
1995
Highly Cited
1995
A multilevel-cell 32 Mb flash memory
M. Bauer
,
R. Alexis
,
+15 authors
K. Wojciechowski
IEEE International Solid-State Circuits…
1995
Corpus ID: 60568857
A flash memory with multilevel cell significantly reduces the memory per-bit cost. A 32 Mb multilevel-cell (MLC) flash memory…
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Highly Cited
1987
Highly Cited
1987
Ultra-thin Ta2O5dielectric film for high-speed bipolar memories
Y. Nishioka
,
N. Homma
,
+5 authors
K. Ogiue
IEEE Transactions on Electron Devices
1987
Corpus ID: 20950819
A new capacitor technology, with extremely thin (5.3-20 nm) Ta<inf>2</inf>O<inf>5</inf>film deposition and weak-spot oxidation…
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Highly Cited
1987
Highly Cited
1987
Resonant tunneling devices with multiple negative differential resistance and demonstration of a three-state memory cell for multiple-valued logic applications
F. Capasso
,
S. Sen
,
A. Cho
,
D. Sivco
IEEE Electron Device Letters
1987
Corpus ID: 26641229
A new resonant-tunneling (RT) functional device with two peaks in the current-voltage (I-V) characteristic has been demonstrated…
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Highly Cited
1985
Highly Cited
1985
An 8-kbit content-addressable and reentrant memory
Hiroshi
,
Kadota
,
Jiro Miyake
,
Hitoshi
,
Kudoh
IEEE Journal of Solid-State Circuits
1985
Corpus ID: 34741745
A 256-word/spl times/32-bit associated memory, referred to as the Content Addressable and Reentrant Memory (CARM), with a 100-ns…
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Highly Cited
1982
Highly Cited
1982
The Case for Idealism
H. Kincaid
,
John Foster
1982
Corpus ID: 146694969
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