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Latch-up
Known as:
Latchup
A latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically it is the inadvertent creation of a low…
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Related topics
Related topics
9 relations
Immunity-aware programming
Integrated circuit
Parasitic structure
Power cycling
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2011
2011
Study of system ESD codesign of a realistic mobile board
D. Johnsson
,
H. Gossner
EOS/ESD Symposium Proceedings
2011
Corpus ID: 6270543
Based on a mobile reference board a full system ESD IC/board codesign flow was examined. Accurate high current transient models…
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2006
2006
Evaluation on board-level noise filter networks to suppress transient-induced latchup in CMOS ICs under system-level ESD test
M. Ker
,
Sheng-Fu Hsu
IEEE transactions on electromagnetic…
2006
Corpus ID: 33044551
Different types of board-level noise filter networks are evaluated to find their effectiveness for improving the immunity of CMOS…
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Highly Cited
2003
Highly Cited
2003
CrossNets: possible neuromorphic networks based on nanoscale components
Özgür Türel
,
K. Likharev
International journal of circuit theory and…
2003
Corpus ID: 3983530
Extremely dense neuromorphic networks may be based on hybrid 2D arrays of nanoscale components, including molecular latching…
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Highly Cited
2002
Highly Cited
2002
Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies
P. Dodd
,
M. Shaneyfelt
,
J. Schwank
,
G. L. Hash
Digest. International Electron Devices Meeting,
2002
Corpus ID: 32794315
In this work we compare neutron-induced soft error rates (SER) and latchup in SRAMs from a variety of manufacturers. SER is found…
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1995
1995
Circuit techniques for the radiation environment of space
J. Canaris
,
Sterling Whitaker
Proceedings of the IEEE Custom Integrated…
1995
Corpus ID: 61610931
Outer space provides a harsh environment for electronic circuits. Even near earth orbits are subject to radiation that can cause…
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1988
1988
Computation of steady-state CMOS latchup characteristics
W. M. Coughran
,
M. Pinto
,
R. K. Smith
IEEE Trans. Comput. Aided Des. Integr. Circuits…
1988
Corpus ID: 5386317
Robust computational techniques are presented for steady-state characterization of CMOS latchup via numerical device simulation…
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1987
1987
High-speed BiCMOS technology with a buried twin well structure
T. Ikeda
,
A. Watanabe
,
+4 authors
K. Ogiue
IEEE Transactions on Electron Devices
1987
Corpus ID: 1923688
A buried twin well and polysilicon emitter structure is developed for high-speed BiCMOS VLSI's. A bipolar transistor of high…
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1985
1985
Accurate trigger condition analysis for CMOS latchup
M. Pinto
,
R. Dutton
IEEE Electron Device Letters
1985
Corpus ID: 44540560
Two-dimensional device simulation is used to accurately predict both static and dynamic triggering conditions for CMOS latchup…
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1985
1985
Mechanisms for the Latchup Window Effect in Integrated Circuits
A. Johnston
,
M. Baze
IEEE Transactions on Nuclear Science
1985
Corpus ID: 7533730
The latchup window effect has been studied in CMOS and advanced bipolar integrated circuits, using a 1.06 pm laser as a…
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Highly Cited
1984
Highly Cited
1984
Suppressing latchup in insulated gate transistors
B. Baliga
,
M. S. Adler
,
Peter V. Gray
,
R. P. Love
IEEE Electron Device Letters
1984
Corpus ID: 8439659
Two-dimensional computer modeling of insulated gate transistor (IGT) structures has been used to demonstrate the suppression of…
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