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Latch-up

Known as: Latchup 
A latch-up is a type of short circuit which can occur in an integrated circuit (IC). More specifically it is the inadvertent creation of a low… 
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Related topics

Related topics

9 relations
Immunity-aware programmingIntegrated circuitParasitic structurePower cycling

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2014
2014
Evidence of the Robustness of a COTS Soft-Error Free SRAM to Neutron Radiation
Radiation tests with 15-MeV neutrons were performed in a COTS SRAM including a new memory cell design combining SRAM cells and… 
2011
2011
Study of system ESD codesign of a realistic mobile board
Based on a mobile reference board a full system ESD IC/board codesign flow was examined. Accurate high current transient models… 
2006
2006
Investigation of External Latchup Robustness of Dual and Triple Well Designs in 65nm Bulk CMOS Technology
In this work, the effect of design parameters on the internal and external latchup robustness of dual well (DW) and triple well… 
Highly Cited
2003
Highly Cited
2003
CrossNets: possible neuromorphic networks based on nanoscale components
Extremely dense neuromorphic networks may be based on hybrid 2D arrays of nanoscale components, including molecular latching… 
Highly Cited
2002
Highly Cited
2002
Neutron-induced soft errors, latchup, and comparison of SER test methods for SRAM technologies
In this work we compare neutron-induced soft error rates (SER) and latchup in SRAMs from a variety of manufacturers. SER is found… 
1987
1987
High-speed BiCMOS technology with a buried twin well structure
A buried twin well and polysilicon emitter structure is developed for high-speed BiCMOS VLSI's. A bipolar transistor of high… 
1986
1986
Numerical Simulation of SEU Induced Latch-Up
The PISCES-II device analysis program has been modified to perform two-dimensional SEU induced latch-up simulations. The results… 
1986
1986
The SINFET—A Schottky injection MOS-gated power transistor
A new MOS-gated power device, the Schottky injection FET (SINFET), is described in this paper. The device offers 6 times higher… 
Highly Cited
1984
Highly Cited
1984
Suppressing latchup in insulated gate transistors
Two-dimensional computer modeling of insulated gate transistor (IGT) structures has been used to demonstrate the suppression of… 
Review
1974
Review
1974
Radiation effects on semiconductor devices
The radiation-induced degradation of semiconductor material parameters is reviewed. These results are related to the degradation… 
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