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Lambert's cosine law

Known as: Lambertian emitter, Lambert's laws, Lambert's Law 
In optics, Lambert's cosine law says that the radiant intensity or luminous intensity observed from an ideal diffusely reflecting surface or ideal… 
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Related topics

Related topics

7 relations

Broader (1)

3D computer graphics
Diffuse reflectionLambertian reflectanceNormal (geometry)Path tracing

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2004
Highly Cited
2004
Spirobifluorene-linked bisanthracene: An efficient blue emitter with pronounced thermal stability
Spiro-FPA, a novel blue emitter, in which two identical anthracene luminophores are linked orthogonally around a spirobifluorene… 
Highly Cited
2002
Highly Cited
2002
Highly bright blue organic light-emitting devices using spirobifluorene-cored conjugated compounds
An efficient and morphologically stable pyrimidine-containing spirobifluorene-cored oligoaryl, 2,7-bis[2-(4-tert-butylphenyl… 
Highly Cited
1997
Highly Cited
1997
Exciplex emission in bilayer polymer light-emitting devices
Photoluminescent and electroluminescent studies of bilayer heterojunctions formed from a poly(pyridyl vinylene phenylene vinylene… 
Highly Cited
1994
Highly Cited
1994
Design techniques for low-voltage high-speed digital bipolar circuits
This paper describes design techniques for multigigahertz digital bipolar circuits with supply voltages as low as 1.5 V. Examples… 
Highly Cited
1986
Highly Cited
1986
Physics, technology, and modeling of polysilicon emitter contacts for VLSI bipolar transistors
The physics of minority-carrier injection into polysilicon-contacted emitters has been studied through a series of experiments… 
Highly Cited
1986
Highly Cited
1986
Quantum-well resonant tunneling bipolar transistor operating at room temperature
The first resonant tunneling bipolar transistor (RBT) is reported. The AlGaAs/GaAs wide-gap emitter device, grown by molecular… 
Highly Cited
1984
Highly Cited
1984
A comprehensive analytical and numerical model of polysilicon emitter contacts in bipolar transistors
A comprehensive model-both analytical and numerical-is proposed as a tool to analyze heavily doped emitters of transistors with… 
Highly Cited
1981
Highly Cited
1981
Self-aligned bipolar transistors for high-performance and low-power-delay VLSI
An n-p-n bipolar transistor structure with the emitter region self-aligned to the polysilicon base contact is described. The self… 
Highly Cited
1980
Highly Cited
1980
Effect of emitter contact on current gain of silicon bipolar devices
The common-emitter current gain β of silicon n-p-n bipolar transistors with shallow (200 nm) emitters contacted by either i) Al… 
Review
1979
Review
1979
Models for computer simulation of complete IC fabrication process
The structure of a complete process simulator for modeling IC technologies is described. Multiple-step sequences which include… 
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