LOCOS

Known as: LOCal Oxidation of Silicon, Loco 
LOCOS, short for LOCal Oxidation of Silicon, is a microfabrication process where silicon dioxide is formed in selected areas on a silicon wafer… (More)
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Papers overview

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2008
2008
We present an improved fabrication method for capacitive micromachined ultrasonic transducers (CMUTs). Recently, a process was… (More)
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2006
2006
Problems of process LOCOS, related with oxidation time, temperature, silicon oxide layer, patterned silicon nitride in CMOS… (More)
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1996
1996
In this paper the feasibility of a lateral isolation scheme based on poly encapsulated LOCOS for 0.25 μm CMOS technologies is… (More)
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1996
1996
This paper presents 2D and 3D TEM characterisation of advanced LOCOS isolation to assess active area encroachment and nitride… (More)
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1992
1992
The inverse-narrow-width effect (INWE) of a LOCOS-isolated n-MOSFET formed in high concentration p-wells is described. The… (More)
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1990
1990
A description is presented of a new LOCOS (local oxidation of silicon) isolation process, reverse-L-shaped sealed poly-buffer… (More)
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1987
1987
Experimental and analytical studies on submicrometer LOCOS oxide structures have been carried out. LOCOS oxide thickness… (More)
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1986
1986
A two-dimensional oxidation model is introduced to analyze stresses induced in the oxide during silicon thermal oxidation for a… (More)
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1986
1986
The local oxidation of silicon (LOCOS) enhancement technique using a thin nitridized pad oxide formed by thermally nitridizing a… (More)
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1984
1984
A new trench isolation technology that is replaceable to LOCOS and is suitable for submicron VLSIs is presented. The technology… (More)
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