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Hydride vapour phase epitaxy

Known as: HVPE, Hybrid vapour phase epitaxy, Hydride vapor phase epitaxy 
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their… Expand
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Papers overview

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Highly Cited
2018
Highly Cited
2018
High-voltage vertical Ga<sub>2</sub>O<sub>3</sub> MISFETs are developed employing halide vapor phase epitaxial (HVPE) layers on… Expand
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2015
2015
Following the recent discovery of very high temperature conventional superconductivity in sulfur hydride (critical temperature Tc… Expand
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2009
2009
This work proposes a method for fabricating 2 in. freestanding GaN substrates of high crystallographic quality and low residual… Expand
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2007
2007
A relatively large sample of gallium nitride (GaN) was grown as a single crystal using the hydride vapor phase epitaxy (HVPE… Expand
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2006
2006
We have grown GaN and AlGaN nanowires on Si (111) substrates with gassource molecular beam epitaxy (MBE). No metal catalysts were… Expand
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2003
2003
We report real-time high temperature transmission electron microscopy observations of the growth of GaN nanowires via a self… Expand
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Highly Cited
2000
Highly Cited
2000
Phytic acid (myo-inositol 1,2,3,4,5,6 hexakisphosphate) is the most abundant form of phosphorus (P) in seeds and is virtually… Expand
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1999
1999
We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate… Expand
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1998
1998
Metallic uranium alloys are candidate materials for use as the fuel phase in very-high-density LEU dispersion fuels. These… Expand
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Highly Cited
1998
Highly Cited
1998
InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding… Expand
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