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Hydride vapour phase epitaxy

Known as: HVPE, Hybrid vapour phase epitaxy, Hydride vapor phase epitaxy 
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their… 
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Related topics

Related topics

3 relations
List of semiconductor materialsMetalorganic vapour phase epitaxy

Broader (1)

Semiconductor device fabrication

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2012
2012
Lithium hydride powered PEM fuel cells for long-duration small mobile robotic missions
This paper reports on a study to develop power supplies for small mobile robots performing long duration missions. It… 
2009
2009
Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
This work proposes a method for fabricating 2 in. freestanding GaN substrates of high crystallographic quality and low residual… 
2006
2006
Growth of bulk GaN by HVPE on pressure grown seeds
Growth of GaN under pressure from solution in gallium results in almost dislocation free plate-like crystals but with size… 
Highly Cited
2005
Highly Cited
2005
Monolithically integrated InP-based photonic chip development for O-CDMA systems
This work discusses photonic integration efforts toward developing an InP-based monolithically integrated photonic chip for… 
Highly Cited
2003
Highly Cited
2003
Refractive index study of AlxGa1−xN films grown on sapphire substrates
A prism coupling method was used to measure the ordinary (no) and extraordinary (ne) refractive indices of AlxGa1−xN films, grown… 
Review
2002
Review
2002
Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
A review of surface structures of bare and adsorbate-covered GaN (0001) and (0001 ) surfaces is presented, including results for… 
Highly Cited
2000
Highly Cited
2000
High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
We report on the growth and transport properties of high-mobility two-dimensional electron gases (2DEGs) confined at the AlGaN… 
Highly Cited
1999
Highly Cited
1999
High voltage (450 V) GaN Schottky rectifiers
We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate… 
1998
1998
FUEL POWDER PRODUCTION FROM DUCTILE URANIUM ALLOYS
Metallic uranium alloys are candidate materials for use as the fuel phase in very-high-density LEU dispersion fuels. These… 
Highly Cited
1989
Highly Cited
1989
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
To investigate the effect of growth area on interface dislocation density in strained‐layer epitaxy, we have fabricated 2‐μm‐high… 
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