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Hydride vapour phase epitaxy

Known as: HVPE, Hybrid vapour phase epitaxy, Hydride vapor phase epitaxy 
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their… Expand
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Papers overview

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2015
2015
Following the recent discovery of very high temperature conventional superconductivity in sulfur hydride (critical temperature Tc… Expand
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Highly Cited
2006
Highly Cited
2006
We have grown GaN and AlGaN nanowires on Si (111) substrates with gassource molecular beam epitaxy (MBE). No metal catalysts were… Expand
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Highly Cited
2003
Highly Cited
2003
We report real-time high temperature transmission electron microscopy observations of the growth of GaN nanowires via a self… Expand
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Highly Cited
2002
Highly Cited
2002
The hardness of 0.5-mm-thick single-crystal aluminum nitride (α-AlN) was measured by the nano-indentation method at room… Expand
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Highly Cited
2001
Highly Cited
2001
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy Z-Q. Fang and D.C. Look Semiconductor Research Center… Expand
Highly Cited
2000
Highly Cited
2000
Phytic acid (myo-inositol 1,2,3,4,5,6 hexakisphosphate) is the most abundant form of phosphorus (P) in seeds and is virtually… Expand
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Highly Cited
2000
Highly Cited
2000
We report on the growth and transport properties of high-mobility two-dimensional electron gases (2DEGs) confined at the AlGaN… Expand
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Highly Cited
1999
Highly Cited
1999
We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate… Expand
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Highly Cited
1998
Highly Cited
1998
InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding… Expand
Highly Cited
1989
Highly Cited
1989
To investigate the effect of growth area on interface dislocation density in strained‐layer epitaxy, we have fabricated 2‐μm‐high… Expand
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