Hydride vapour phase epitaxy

Known as: HVPE, Hybrid vapour phase epitaxy, Hydride vapor phase epitaxy 
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their… (More)
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Topic mentions per year

Topic mentions per year

1987-2018
05101519872018

Papers overview

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2017
2017
Hydride vapor phase epitaxy (HVPE) is a low-cost alternative to conventional metal-organic vapor phase epitaxy (MOVPE) growth of… (More)
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2014
2014
Substantial increases in substrate temperature, super-saturation, and V/III ratio have dramatically improved vertical domain… (More)
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2008
2008
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  • 2008
The Si-doping of GaN by hydride vapour phase epitaxy (HVPE) has been analyzed. To this end, a Ga:Si-solution was employed as Si… (More)
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2007
2007
Hydride vapour phase epitaxy grown allepitaxial p-i-n structures were studied by synchrotron X-ray topography. Three types of… (More)
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2006
2006
Hydride vapour phase epitaxy (HVPE) is one of the most promising methods to grow thick GaN layers because of high rate of grown… (More)
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2006
2006
We report on successful spectral phase encoding and decoding operation in a pair of monolithically integrated InP encoder chips… (More)
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2005
2005
This work discusses photonic integration efforts toward developing an InP-based monolithically integrated photonic chip for… (More)
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2004
2004
Reliable values of thermal conductivity of thin films made of GaN and its alloys are important for further development of nitride… (More)
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1999
1999
We fabricated high standoff voltage ~450 V! Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate… (More)
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1999
1999
We report room temperature stimulated emission from as-grown GaN hexagons by selective area growth hydride vapor phase epitaxy… (More)
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