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Hydride vapour phase epitaxy

Known as: HVPE, Hybrid vapour phase epitaxy, Hydride vapor phase epitaxy 
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their… Expand
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Related topics

Related topics

3 relations
List of semiconductor materialsMetalorganic vapour phase epitaxy

Broader (1)

Semiconductor device fabrication

Papers overview

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Highly Cited
2018
Highly Cited
2018
Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV
High-voltage vertical Ga<sub>2</sub>O<sub>3</sub> MISFETs are developed employing halide vapor phase epitaxial (HVPE) layers on… Expand
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2015
2015
Superconductivity above 100 K in PH3 at high pressures
Following the recent discovery of very high temperature conventional superconductivity in sulfur hydride (critical temperature Tc… Expand
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2009
2009
Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
This work proposes a method for fabricating 2 in. freestanding GaN substrates of high crystallographic quality and low residual… Expand
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2007
2007
High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process
A relatively large sample of gallium nitride (GaN) was grown as a single crystal using the hydride vapor phase epitaxy (HVPE… Expand
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2006
2006
Catalyst-free growth of GaN nanowires
We have grown GaN and AlGaN nanowires on Si (111) substrates with gassource molecular beam epitaxy (MBE). No metal catalysts were… Expand
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2003
2003
Watching GaN Nanowires Grow
We report real-time high temperature transmission electron microscopy observations of the growth of GaN nanowires via a self… Expand
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Highly Cited
2000
Highly Cited
2000
Isolation and genetic mapping of a non-lethal rice (Oryza sativa L.) low phytic acid 1 mutation.
Phytic acid (myo-inositol 1,2,3,4,5,6 hexakisphosphate) is the most abundant form of phosphorus (P) in seeds and is virtually… Expand
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1999
1999
High voltage (450 V) GaN Schottky rectifiers
We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate… Expand
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1998
1998
Fuel powder production from ductile uranium alloys.
Metallic uranium alloys are candidate materials for use as the fuel phase in very-high-density LEU dispersion fuels. These… Expand
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Highly Cited
1998
Highly Cited
1998
InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices grown on an epitaxially laterally overgrown GaN substrate
InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding… Expand
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