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Hydride vapour phase epitaxy

Known as: HVPE, Hybrid vapour phase epitaxy, Hydride vapor phase epitaxy 
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their… 
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Related topics

Related topics

3 relations
List of semiconductor materialsMetalorganic vapour phase epitaxy

Broader (1)

Semiconductor device fabrication

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2009
2009
Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
This work proposes a method for fabricating 2 in. freestanding GaN substrates of high crystallographic quality and low residual… 
2006
2006
Growth of bulk GaN by HVPE on pressure grown seeds
Growth of GaN under pressure from solution in gallium results in almost dislocation free plate-like crystals but with size… 
2006
2006
Ferroelectric properties and fatigue behavior of heteroepitaxial PbZr1-xTixO3 thin film fabricated by hydrothermal epitaxy below Curie temperature
A heteroepitaxial PbZr1−xTixO3 (PZT) thin film was fabricated by means of hydrothermal epitaxy at 210 °C below Curie temperature… 
2004
2004
Synthesis of Potassium Niobiate (KNbO3) Thin Films by Low-Temperature Hydrothermal Epitaxy
Orthorhombic KNbO3 thin films were deposited on SrTiO3 (100) and LiTaO3 (001) substrates by low-temperature hydrothermal epitaxy… 
2003
2003
Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals
Hydride vapor phase epitaxy (HVPE) was used to grow nominally undoped 30–160 μm thick GaN layers on both the Ga and N polar sides… 
2003
2003
GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer
2002
2002
Deep Hole Traps in N-GaN Films Grown by Hydride Vapor Phase Epitaxy
Concentrations of deep hole traps were measured in a set of hydride vapor phase epitaxy grown samples with thicknesses varying… 
2002
2002
Gallium nitride materials - progress, status, and potential roadblocks
Metal-organic vapor phase epitaxy (MOVPE) and molecular beam epitaxy (MBE) are the principal techniques for the growth and n-type… 
1998
1998
Growth of GaN on lithium gallate substrates for development of a GaN thin compliant substrate
Since we have found that an entire substrate can be chemically removed in less than 5 min and since GaN is impervious to chemical… 
1996
1996
A near‐field scanning optical microscopy study of the photoluminescence from GaN films
We have achieved spatially resolved photoluminescence from GaN films using a near‐field scanning optical microscope (NSOM). GaN… 
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