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Hydride vapour phase epitaxy

Known as: HVPE, Hybrid vapour phase epitaxy, Hydride vapor phase epitaxy 
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their… 
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Papers overview

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2009
2009
This work proposes a method for fabricating 2 in. freestanding GaN substrates of high crystallographic quality and low residual… 
2006
2006
Growth of GaN under pressure from solution in gallium results in almost dislocation free plate-like crystals but with size… 
2006
2006
A heteroepitaxial PbZr1−xTixO3 (PZT) thin film was fabricated by means of hydrothermal epitaxy at 210 °C below Curie temperature… 
Highly Cited
2005
Highly Cited
2005
This work discusses photonic integration efforts toward developing an InP-based monolithically integrated photonic chip for… 
Review
2002
Review
2002
A review of surface structures of bare and adsorbate-covered GaN (0001) and (0001 ) surfaces is presented, including results for… 
2002
2002
Concentrations of deep hole traps were measured in a set of hydride vapor phase epitaxy grown samples with thicknesses varying… 
2002
2002
Scanning Kelvin probe microscopy is used to image surface potential variations in GaN (0001) grown by hydride vapor phase epitaxy… 
1998
1998
Metallic uranium alloys are candidate materials for use as the fuel phase in very-high-density LEU dispersion fuels. These… 
1996
1996
We have achieved spatially resolved photoluminescence from GaN films using a near‐field scanning optical microscope (NSOM). GaN…