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Hydride vapour phase epitaxy
Known as:
HVPE
, Hybrid vapour phase epitaxy
, Hydride vapor phase epitaxy
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Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their…
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Related topics
Related topics
3 relations
List of semiconductor materials
Metalorganic vapour phase epitaxy
Broader (1)
Semiconductor device fabrication
Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2015
Highly Cited
2015
Superconductivity above 100 K in PH3 at high pressures
A. Drozdov
,
M. Eremets
,
I. Troyan
2015
Corpus ID: 118343604
Following the recent discovery of very high temperature conventional superconductivity in sulfur hydride (critical temperature Tc…
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Review
2006
Review
2006
New materials for radiation hard semiconductor dectectors
P. Sellin
,
J. Vaitkus
2006
Corpus ID: 15437535
Highly Cited
2006
Highly Cited
2006
Catalyst-free growth of GaN nanowires
K. Bertness
,
N. Sanford
,
+4 authors
I. Levin
2006
Corpus ID: 56395360
We have grown GaN and AlGaN nanowires on Si (111) substrates with gassource molecular beam epitaxy (MBE). No metal catalysts were…
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Highly Cited
2003
Highly Cited
2003
Watching GaN Nanowires Grow
E. Stach
,
P. Pauzauskie
,
T. Kuykendall
,
J. Goldberger
,
R. He
,
P. Yang
2003
Corpus ID: 98628923
We report real-time high temperature transmission electron microscopy observations of the growth of GaN nanowires via a self…
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Highly Cited
2001
Highly Cited
2001
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy - eScholarship
Z. Fang
,
D. Look
,
J. Jasinski
,
M. Benamara
,
Z. Liliental-Weber
,
R. Molnar
2001
Corpus ID: 45998658
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy Z-Q. Fang and D.C. Look Semiconductor Research Center…
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Highly Cited
2000
Highly Cited
2000
Isolation and genetic mapping of a non-lethal rice (Oryza sativa L.) low phytic acid 1 mutation
S. Larson
,
J. Rutger
,
K. A. Young
,
V. Raboy
2000
Corpus ID: 59395122
Phytic acid (myo-inositol 1,2,3,4,5,6 hexakisphosphate) is the most abundant form of phosphorus (P) in seeds and is virtually…
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Highly Cited
2000
Highly Cited
2000
High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
M. Manfra
,
L. Pfeiffer
,
+5 authors
R. Molnar
2000
Corpus ID: 121042088
We report on the growth and transport properties of high-mobility two-dimensional electron gases (2DEGs) confined at the AlGaN…
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Highly Cited
1999
Highly Cited
1999
High voltage (450 V) GaN Schottky rectifiers
Z. Bandic
,
P. Bridger
,
+4 authors
J. Redwing
1999
Corpus ID: 2787473
We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate…
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Highly Cited
1997
Highly Cited
1997
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
S. Nakamura
,
M. Senoh
,
+9 authors
Kazuyuki Chocho Kazuyuki Chocho
1997
Corpus ID: 119446981
InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding…
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Highly Cited
1989
Highly Cited
1989
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
E. Fitzgerald
,
G. Watson
,
+4 authors
J. Woodall
1989
Corpus ID: 18936354
To investigate the effect of growth area on interface dislocation density in strained‐layer epitaxy, we have fabricated 2‐μm‐high…
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