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Hydride vapour phase epitaxy

Known as: HVPE, Hybrid vapour phase epitaxy, Hydride vapor phase epitaxy 
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their… 
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Related topics

Related topics

3 relations
List of semiconductor materialsMetalorganic vapour phase epitaxy

Broader (1)

Semiconductor device fabrication

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2009
2009
Freestanding high quality GaN substrate by associated GaN nanorods self-separated hydride vapor-phase epitaxy
This work proposes a method for fabricating 2 in. freestanding GaN substrates of high crystallographic quality and low residual… 
2006
2006
Growth of bulk GaN by HVPE on pressure grown seeds
Growth of GaN under pressure from solution in gallium results in almost dislocation free plate-like crystals but with size… 
2006
2006
Ferroelectric properties and fatigue behavior of heteroepitaxial PbZr1-xTixO3 thin film fabricated by hydrothermal epitaxy below Curie temperature
A heteroepitaxial PbZr1−xTixO3 (PZT) thin film was fabricated by means of hydrothermal epitaxy at 210 °C below Curie temperature… 
Highly Cited
2005
Highly Cited
2005
Monolithically integrated InP-based photonic chip development for O-CDMA systems
This work discusses photonic integration efforts toward developing an InP-based monolithically integrated photonic chip for… 
2003
2003
GaN-based light-emitting diodes with Ni/AuBe transparent conductive layer
Review
2002
Review
2002
Structure of Bare and Adsorbate-Covered GaN(0001) Surfaces
A review of surface structures of bare and adsorbate-covered GaN (0001) and (0001 ) surfaces is presented, including results for… 
2002
2002
Deep Hole Traps in N-GaN Films Grown by Hydride Vapor Phase Epitaxy
Concentrations of deep hole traps were measured in a set of hydride vapor phase epitaxy grown samples with thicknesses varying… 
2002
2002
Scanning Kelvin probe microscopy of surface electronic structure in GaN grown by hydride vapor phase epitaxy
Scanning Kelvin probe microscopy is used to image surface potential variations in GaN (0001) grown by hydride vapor phase epitaxy… 
1998
1998
FUEL POWDER PRODUCTION FROM DUCTILE URANIUM ALLOYS
Metallic uranium alloys are candidate materials for use as the fuel phase in very-high-density LEU dispersion fuels. These… 
1996
1996
A near‐field scanning optical microscopy study of the photoluminescence from GaN films
We have achieved spatially resolved photoluminescence from GaN films using a near‐field scanning optical microscope (NSOM). GaN… 
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