FAQ

Hydride vapour phase epitaxy

Known as: HVPE, Hybrid vapour phase epitaxy, Hydride vapor phase epitaxy 
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their… (More)
Wikipedia

Topic mentions per year

Topic mentions per year

1987-2018
05101519872018

Related topics

Related topics

3 relations
List of semiconductor materialsMetalorganic vapour phase epitaxy

Broader (1)

Semiconductor device fabrication

Related mentions per year

Related mentions per year

1937-2018
19401960198020002020
Hydride vapour phase epitaxy
Semiconductor device fabrication
List of semiconductor materials
Metalorganic vapour phase epitaxy

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2017
2017
Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy
Hydride vapor phase epitaxy (HVPE) is a low-cost alternative to conventional metal-organic vapor phase epitaxy (MOVPE) growth of… (More)
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2014
2014
Growth of device-quality orientation-patterned gallium phosphide (OP-GaP) by improved hydride vapour phase epitaxy
Substantial increases in substrate temperature, super-saturation, and V/III ratio have dramatically improved vertical domain… (More)
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2008
2008
Si-doped GaN by Hydride-Vapour-Phase-Epitaxy Using a Ga:Si-Solution as Doping Source
  • Frank Lipski
  • 2008
The Si-doping of GaN by hydride vapour phase epitaxy (HVPE) has been analyzed. To this end, a Ga:Si-solution was employed as Si… (More)
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2007
2007
Dislocations in GaAs p-i-n diodes grown by hydride vapour phase epitaxy
Hydride vapour phase epitaxy grown allepitaxial p-i-n structures were studied by synchrotron X-ray topography. Three types of… (More)
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2006
2006
Thick GaN Layers Deposited by Hydride Vapour Phase Epitaxy
Hydride vapour phase epitaxy (HVPE) is one of the most promising methods to grow thick GaN layers because of high rate of grown… (More)
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2006
2006
Demonstration of Spectral Phase O-CDMA Encoding and Decoding in Monolithically Integrated Arrayed-Waveguide-Grating-Based Encoder
We report on successful spectral phase encoding and decoding operation in a pair of monolithically integrated InP encoder chips… (More)
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2005
2005
Monolithically integrated InP-based photonic chip development for O-CDMA systems
This work discusses photonic integration efforts toward developing an InP-based monolithically integrated photonic chip for… (More)
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2004
2004
Temperature dependence of thermal conductivity of AlxGa1−xN thin films measured by the differential 3v technique
Reliable values of thermal conductivity of thin films made of GaN and its alloys are important for further development of nitride… (More)
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1999
1999
High voltage „450 V... GaN Schottky rectifiers
We fabricated high standoff voltage ~450 V! Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate… (More)
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1999
1999
Stimulated Emission from As-grown GaN Hexagons by Selective Area Growth Hydride Vapor Phase Epitaxy
We report room temperature stimulated emission from as-grown GaN hexagons by selective area growth hydride vapor phase epitaxy… (More)
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