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Hydride vapour phase epitaxy

Known as: HVPE, Hybrid vapour phase epitaxy, Hydride vapor phase epitaxy 
Hydride vapour phase epitaxy (HVPE) is an epitaxial growth technique often employed to produce semiconductors such as GaN, GaAs, InP and their… 
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Related topics

Related topics

3 relations
List of semiconductor materialsMetalorganic vapour phase epitaxy

Broader (1)

Semiconductor device fabrication

Papers overview

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Highly Cited
2015
Highly Cited
2015
Superconductivity above 100 K in PH3 at high pressures
Following the recent discovery of very high temperature conventional superconductivity in sulfur hydride (critical temperature Tc… 
Review
2006
Review
2006
New materials for radiation hard semiconductor dectectors
Highly Cited
2006
Highly Cited
2006
Catalyst-free growth of GaN nanowires
We have grown GaN and AlGaN nanowires on Si (111) substrates with gassource molecular beam epitaxy (MBE). No metal catalysts were… 
Highly Cited
2003
Highly Cited
2003
Watching GaN Nanowires Grow
We report real-time high temperature transmission electron microscopy observations of the growth of GaN nanowires via a self… 
Highly Cited
2001
Highly Cited
2001
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy - eScholarship
Evolution of deep centers in GaN grown by hydride vapor phase epitaxy Z-Q. Fang and D.C. Look Semiconductor Research Center… 
Highly Cited
2000
Highly Cited
2000
Isolation and genetic mapping of a non-lethal rice (Oryza sativa L.) low phytic acid 1 mutation
Phytic acid (myo-inositol 1,2,3,4,5,6 hexakisphosphate) is the most abundant form of phosphorus (P) in seeds and is virtually… 
Highly Cited
2000
Highly Cited
2000
High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
We report on the growth and transport properties of high-mobility two-dimensional electron gases (2DEGs) confined at the AlGaN… 
Highly Cited
1999
Highly Cited
1999
High voltage (450 V) GaN Schottky rectifiers
We fabricated high standoff voltage (450 V) Schottky rectifiers on hydride vapor phase epitaxy grown GaN on sapphire substrate… 
Highly Cited
1997
Highly Cited
1997
InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices
InGaN multi-quantum-well-structure laser diodes with Al0.14Ga0.86N/GaN modulation doped strained-layer superlattice cladding… 
Highly Cited
1989
Highly Cited
1989
Nucleation mechanisms and the elimination of misfit dislocations at mismatched interfaces by reduction in growth area
To investigate the effect of growth area on interface dislocation density in strained‐layer epitaxy, we have fabricated 2‐μm‐high… 
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