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List of semiconductor materials
Known as:
II-VI
, Compound semiconductor
, Semiconductor materials
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Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be doped with…
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Related topics
41 relations
Atomic layer deposition
Bismuth telluride
Computer
Copper indium gallium selenide
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
2008
2008
Einstein Relation in Compound Semiconductors and Their Nanostructures
K. P. Ghatak
,
S. Bhattacharya
,
D. De
2008
Corpus ID: 117064123
Basics of the Einstein Relation.- The Einstein Relation in Bulk Specimens of Compound Semiconductors.- The Einstein Relation in…
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Highly Cited
2007
Highly Cited
2007
Enhancement-mode InP n-channel metal-oxide-semiconductor field-effect transistors with atomic-layer-deposited Al2O3 dielectrics
Yan-Qing Wu
,
Y. Xuan
,
T. Shen
,
P. Ye
,
Z. Cheng
,
Anthony Lochtefeld
2007
Corpus ID: 120643563
Enhancement-mode (E-mode) n-channel InP metal-oxide-semiconductor field-effect transistors (MOSFETs) with 0.75–40μm gate length…
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Review
2005
Review
2005
Ovonics : From science to products
D. Strand
2005
Corpus ID: 17739922
Ovshinsky's pioneering work and inventions in amorphous chalcogenide semiconductor materials in the 1960s invigorated an entire…
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Review
2003
Review
2003
Room-Temperature Ballistic Nanodevices
A. Song
2003
Corpus ID: 5629424
One of the most important physical parameters to describe the quality of a piece of semiconductor material is the electron…
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2001
2001
Collinear light modulation by surface acoustic waves in laterally structured semiconductors
P. Santos
2001
Corpus ID: 56444659
The modulation of light beams by surface acoustic waves (SAW) in periodically modulated photonic materials is investigated. The…
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1999
1999
Photonic band-gap waveguide microcavities: Monorails and air bridges
K. Lim
,
D. Ripin
,
+7 authors
J. Joannopoulos
1999
Corpus ID: 42291880
Photonic band-gap monorail and air-bridge waveguide microcavities, operating at the wavelength regime of 1550 nm, are fabricated…
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1995
1995
Intensity-dependent energy and line shape variation of donor-acceptor-pair bands in ZnSe:N at different compensation levels
P. Baume
,
J. Gutowski
,
+5 authors
G. Landwehr
1995
Corpus ID: 55298020
We show that energy position and line shape of donor–acceptor‐pair luminescence bands in ZnSe:N/GaAs epilayers depend very…
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Highly Cited
1994
Highly Cited
1994
Crystalline phases of II‐VI compound semiconductors grown by pulsed laser deposition
Wen-Pin Shen
,
Hoi-Sing Kwok
1994
Corpus ID: 17075555
II‐VI compound semiconductors, ZnS, ZnSe, CdS, CdSe, and CdTe, were grown epitaxially on (111) and (100) InP and GaAs substrates…
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1994
1994
Measurement of solid–liquid interface temperature during pulsed excimer laser melting of polycrystalline silicon films
Xian-Fan Xu
,
C. Grigoropoulos
,
R. Russo
1994
Corpus ID: 123416951
A nanosecond time resolution pyrometer has been developed for measuring the transient temperature of thin polycrystalline silicon…
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Highly Cited
1983
Highly Cited
1983
Improved photoluminescence of organometallic vapor phase epitaxial AlGaAs using a new gettering technique on the arsine source
J. Shealy
,
V. G. Kreismanis
,
D. K. Wagner
,
J. Woodall
1983
Corpus ID: 12357401
Using an aluminum‐gallium‐indium ternary melt for the removal of oxygen and moisture from the arsine source, substantial…
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