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List of semiconductor materials

Known as: II-VI, Compound semiconductor, Semiconductor materials 
Semiconductor materials are nominally small band gap insulators. The defining property of a semiconductor material is that it can be doped with… 
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Related topics

Related topics

41 relations
Atomic layer depositionBismuth tellurideComputerCopper indium gallium selenide

Papers overview

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Review
2008
Review
2008
Main determinants for III–V metal-oxide-semiconductor field-effect transistors (invited)
  • P. Ye
  • 2008
  • Corpus ID: 45648280
Lacking a suitable gate insulator, practical GaAs metal-oxide-semiconductor field-effect transistors (MOSFETs) have remained all… 
Highly Cited
2007
Highly Cited
2007
Amphoteric Phosphorus Doping for Stable p‐Type ZnO
Zinc oxide is a wide bandgap semiconductor with potential applications in optoelectronic devices. The greatest challenge for… 
Highly Cited
2005
Highly Cited
2005
Similar and dissimilar aspects of III-V semiconductors containing Bi versus N
We show through band structure calculations that III-V-Bi alloys, emerging as a new class of semiconductor materials, differ… 
Highly Cited
2002
Highly Cited
2002
SiC and GaN transistors - is there one winner for microwave power applications?
Wide bandgap semiconductors show promise for high-power microwave electronic devices. Primarily due to low breakdown voltage, it… 
Highly Cited
2002
Highly Cited
2002
Template-Based Growth of Various Oxide Nanorods by Sol–Gel Electrophoresis
The ability to form oxide nanorods is of great interest in a number of areas. In this paper, we report the template-based growth… 
Highly Cited
1998
Highly Cited
1998
Reduction of Etch Pit Density in Organometallic Vapor Phase Epitaxy-Grown GaN on Sapphire by Insertion of a Low-Temperature-Deposited Buffer Layer between High-Temperature-Grown GaN
The etch pit density of organometallic vapor phase epitaxy (OMVPE)-grown GaN on sapphire was discovered to reduce drastically by… 
Highly Cited
1991
Highly Cited
1991
Van der Waals bonding of GaAs on Pd leads to a permanent, solid‐phase‐topotaxial, metallurgical bond
Various forms of wafer bonding have now emerged as a serious competitor to heteroepitaxy for optoelectronic integration of… 
Highly Cited
1990
Highly Cited
1990
Monte Carlo analysis of semiconductor devices: the DAMOCLES program
The behavior of small semiconductor devices is simulated using an advanced Monte Carlo carrier transport model. The model… 
Highly Cited
1980
Highly Cited
1980
Comparative potential performance of Si, GaAs, GaInAs, InAs submicrometer-gate FET's
For very-short-gate FET's, the nonstationary electron dynamic effects greatly improve the device performance. By means of a… 
Review
1975
Review
1975
Charge Carrier Transport Properties of Semiconductor Materials Suitable for Nuclear Radiation Detectors
Charge carrier drift velocities in semiconductor materials suitable for solid state detectors has been reviewed. Si, Ge, CdTe and… 
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