Skip to search formSkip to main contentSkip to account menu

Heterojunction

Known as: HJ, Heterojunctions, Junction 
A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors. These semiconducting materials… 
Wikipedia (opens in a new tab)

Related topics

Related topics

33 relations
Anderson's ruleBand bendingBand offsetChemical vapor deposition

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2002
Highly Cited
2002
Terahertz semiconductor-heterostructure lasers
Injection lasers based on interminiband transitions in GaAs/AlGaAs heterostructures are operated in the THz range. Single-mode… 
Highly Cited
1998
Highly Cited
1998
NONLINEAR NANO-OPTICS : PROBING ONE EXCITON AT A TIME
Abstract : Coherent nonlinear optical spectroscopy of individual excitons in GaAs quantum dots is demonstrated and shows strong… 
Highly Cited
1994
Highly Cited
1994
Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °C
Polycrystalline silicon films have been deposited on glass substrates at 350 °C by radio‐frequency plasma‐enhanced chemical vapor… 
Highly Cited
1993
Highly Cited
1993
Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics
A series of III‐V‐based magnetic semiconductor heterostructures, p‐type (In,Mn)As/(Ga,Al)Sb, has been grown by molecular beam… 
Highly Cited
1992
Highly Cited
1992
Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering process
The lateral quantum wells formed in vertical (GaAs)n/(InAs)n and (GaP)n/(InP)n short‐period superlattices (SPS) grown on… 
Highly Cited
1988
Highly Cited
1988
Resonant tunneling and intrinsic bistability in asymmetric double‐barrier heterostructures
We report measurements of the current‐voltage characteristics of an asymmetric GaAs/AlGaAs double‐barrier resonant tunneling… 
Highly Cited
1987
Highly Cited
1987
Gaas-Alas Monolithic Microresonator Arrays
Monolithic optical logic devices 1.5-5 μm across are defined by ion-beam assisted etching through a GaAs/AlAs Fabry-Perot… 
Highly Cited
1986
Highly Cited
1986
Enhancement- and depletion-mode p-channel GexSi1-xmodulation-doped FET's
We report enhancement- and depletion-mode p-channel modulation-doped field-effect transistors (FET's) in Si. Si/GexSi1… 
Highly Cited
1986
Highly Cited
1986
On the low-temperature degradation of (AlGa)As/GaAs modulation-doped field-effect transistors
A comprehensive study of the anomalous low-temperature behavior of modulation,doped (Al, Ga)As/GaAs field-effect transistors is… 
Highly Cited
1976
Highly Cited
1976
Analysis of grating-coupled radiation in GaAs:GaAlAs lasers and waveguides - I
Grating-coupled radiation in GaAs:GaAlAs lasers and waveguides is analyzed. A general formulation is developed for arbitrary… 
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)