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Heterojunction
Known as:
HJ
, Heterojunctions
, Junction
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A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors. These semiconducting materials…
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Related topics
Related topics
33 relations
Anderson's rule
Band bending
Band offset
Chemical vapor deposition
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Papers overview
Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2010
Highly Cited
2010
Gate dependent photocurrents at a graphene p-n junction
E. Peters
,
Eduardo J H Lee
,
M. Burghard
,
K. Kern
2010
Corpus ID: 121005126
We have used scanning photocurrent microscopy to explore the electronic characteristics of a graphene p-n junction fabricated by…
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Highly Cited
2004
Highly Cited
2004
High-temperature operation of InAs-GaAs quantum-dot infrared photodetectors with large responsivity and detectivity
Subhananda Chakrabarti
,
A. Stiff-Roberts
,
+4 authors
S. Kennerly
IEEE Photonics Technology Letters
2004
Corpus ID: 35281667
We have optimized the growth of multiple (40-70) layers of self-organized InAs quantum dots separated by GaAs barrier layers in…
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Highly Cited
2004
Highly Cited
2004
Spin injection from the Heusler alloy Co2MnGe into Al0.1Ga0.9As∕GaAs heterostructures
X. Dong
,
C. Adelmann
,
+6 authors
A. Petford-Long
2004
Corpus ID: 118275279
Electrical spin injection from the Heusler alloy Co2MnGe into a p-i-nAl0.1Ga0.9As∕GaAs light emitting diode is demonstrated. A…
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Highly Cited
1999
Highly Cited
1999
2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
D. Garbuzov
,
H. Lee
,
V. Khalfin
,
R. Martinelli
,
J. Connolly
,
G. Belenky
IEEE Photonics Technology Letters
1999
Corpus ID: 29876258
A new approach in the design of (Al)InGaAsSb-GaSb quantum-well separate confinement heterostructure (QW-SCH) diode lasers has led…
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Highly Cited
1998
Highly Cited
1998
Silicon Self-Diffusion in Isotope Heterostructures
H. Bracht
,
E. Haller
,
R. Clark-Phelps
1998
Corpus ID: 54514180
Self-diffusion of silicon is measured between 855 and 1388 \ifmmode^\circ\else\textdegree\fi{}C in highly isotopically enriched…
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Highly Cited
1996
Highly Cited
1996
ELECTRON TRANSFER IN SELF-ASSEMBLED INORGANIC POLYELECTROLYTE/METAL NANOPARTICLE HETEROSTRUCTURES
D. Feldheim
,
Katherine C. Grabar
,
M. Natan
,
T. Mallouk
1996
Corpus ID: 94983221
The way in which molecular building blocks are arranged within supramolecular structures has a marked effect on their chemical…
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Highly Cited
1996
Highly Cited
1996
Low interface state density oxide‐GaAs structures fabricated by in situ molecular beam epitaxy
M. Hong
,
M. Passlack
,
+5 authors
V. Fratello
1996
Corpus ID: 33083842
Several oxide‐GaAs heterostructures were fabricated using in situ multiple‐chamber molecular beam epitaxy. The oxides include…
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Highly Cited
1993
Highly Cited
1993
Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics
H. Munekata
,
A. Zaslavsky
,
P. Fumagalli
,
R. Gambino
1993
Corpus ID: 120586338
A series of III‐V‐based magnetic semiconductor heterostructures, p‐type (In,Mn)As/(Ga,Al)Sb, has been grown by molecular beam…
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Highly Cited
1992
Highly Cited
1992
Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering process
K. Cheng
,
K. Hsieh
,
J. Baillargeon
1992
Corpus ID: 64504124
The lateral quantum wells formed in vertical (GaAs)n/(InAs)n and (GaP)n/(InP)n short‐period superlattices (SPS) grown on…
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Highly Cited
1976
Highly Cited
1976
Analysis of grating-coupled radiation in GaAs:GaAlAs lasers and waveguides - I
W. Streifer
,
D. Scifres
,
R. Burnham
IEEE Journal of Quantum Electronics
1976
Corpus ID: 40165597
Grating-coupled radiation in GaAs:GaAlAs lasers and waveguides is analyzed. A general formulation is developed for arbitrary…
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