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Heterojunction

Known as: HJ, Heterojunctions, Junction 
A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors. These semiconducting materials… 
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Related topics

Related topics

33 relations
Anderson's ruleBand bendingBand offsetChemical vapor deposition

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2009
2009
Large converse magnetoelectric coupling in FeCoV/lead zinc niobate-lead titanate heterostructure
Multiferroic behavior was directly verified in a laminated ferroelectric-ferromagnetic heterostructure consisting of a FeCoV… 
Highly Cited
2007
Highly Cited
2007
Near ultraviolet light emitting diode composed of n-GaN∕ZnO coaxial nanorod heterostructures on a p-GaN layer
The authors report on the fabrication and characteristics of near ultraviolet nanorod light emitting diodes (LEDs) composed of n… 
Highly Cited
2007
Highly Cited
2007
Epitaxial growth of MgO nanowires by pulsed laser deposition
We fabricated single-crystalline MgO nanowires epitaxially grown on MgO single crystal substrate using the Au catalyst-assisted… 
Highly Cited
2002
Highly Cited
2002
Extremely high room-temperature two-dimensional hole gas mobility in Ge/Si0.33Ge0.67/Si(001) p-type modulation-doped heterostructures
To extract the room-temperature drift mobility and sheet carrier density of two-dimensional hole gas (2DHG) that form in Ge… 
Highly Cited
1998
Highly Cited
1998
NONLINEAR NANO-OPTICS : PROBING ONE EXCITON AT A TIME
Abstract : Coherent nonlinear optical spectroscopy of individual excitons in GaAs quantum dots is demonstrated and shows strong… 
Highly Cited
1998
Highly Cited
1998
Time-domain measurement of intersubband oscillations in a quantum well
We report time-domain measurements of electron intersubband oscillations in quantum wells. We use an interferometric technique to… 
Highly Cited
1994
Highly Cited
1994
Change in crystalline morphologies of polycrystalline silicon films prepared by radio‐frequency plasma‐enhanced chemical vapor deposition using SiF4+H2 gas mixture at 350 °C
Polycrystalline silicon films have been deposited on glass substrates at 350 °C by radio‐frequency plasma‐enhanced chemical vapor… 
Highly Cited
1993
Highly Cited
1993
Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics
A series of III‐V‐based magnetic semiconductor heterostructures, p‐type (In,Mn)As/(Ga,Al)Sb, has been grown by molecular beam… 
Highly Cited
1992
Highly Cited
1992
Formation of lateral quantum wells in vertical short-period superlattices by strain-induced lateral-layer ordering process
The lateral quantum wells formed in vertical (GaAs)n/(InAs)n and (GaP)n/(InP)n short‐period superlattices (SPS) grown on… 
Highly Cited
1988
Highly Cited
1988
Resonant tunneling and intrinsic bistability in asymmetric double‐barrier heterostructures
We report measurements of the current‐voltage characteristics of an asymmetric GaAs/AlGaAs double‐barrier resonant tunneling… 
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