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Heterojunction

Known as: HJ, Heterojunctions, Junction 
A heterojunction is the interface that occurs between two layers or regions of dissimilar crystalline semiconductors. These semiconducting materials… 
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Papers overview

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Highly Cited
2010
Highly Cited
2010
We have used scanning photocurrent microscopy to explore the electronic characteristics of a graphene p-n junction fabricated by… 
Highly Cited
2004
Highly Cited
2004
We have optimized the growth of multiple (40-70) layers of self-organized InAs quantum dots separated by GaAs barrier layers in… 
Highly Cited
2004
Highly Cited
2004
Electrical spin injection from the Heusler alloy Co2MnGe into a p-i-nAl0.1Ga0.9As∕GaAs light emitting diode is demonstrated. A… 
Highly Cited
1999
Highly Cited
1999
A new approach in the design of (Al)InGaAsSb-GaSb quantum-well separate confinement heterostructure (QW-SCH) diode lasers has led… 
Highly Cited
1998
Highly Cited
1998
Self-diffusion of silicon is measured between 855 and 1388 \ifmmode^\circ\else\textdegree\fi{}C in highly isotopically enriched… 
Highly Cited
1996
Highly Cited
1996
The way in which molecular building blocks are arranged within supramolecular structures has a marked effect on their chemical… 
Highly Cited
1996
Highly Cited
1996
Several oxide‐GaAs heterostructures were fabricated using in situ multiple‐chamber molecular beam epitaxy. The oxides include… 
Highly Cited
1993
Highly Cited
1993
A series of III‐V‐based magnetic semiconductor heterostructures, p‐type (In,Mn)As/(Ga,Al)Sb, has been grown by molecular beam… 
Highly Cited
1992
Highly Cited
1992
The lateral quantum wells formed in vertical (GaAs)n/(InAs)n and (GaP)n/(InP)n short‐period superlattices (SPS) grown on… 
Highly Cited
1976
Highly Cited
1976
Grating-coupled radiation in GaAs:GaAlAs lasers and waveguides is analyzed. A general formulation is developed for arbitrary…