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Band offset

Band offset describes the relative alignment of the energy bands at a semiconductor heterojunction.
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Related topics

Related topics

2 relations
Anderson's ruleHeterojunction

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
Highly Cited
2018
Highly Cited
2018
Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys
The band gaps and band offsets of the transparent conducting oxides Ga${}_{2}$O${}_{3}$ and (Al${}_{x}$Ga${}_{1\ensuremath{-}x… 
Highly Cited
2017
Highly Cited
2017
Solar Energy Materials and Solar Cells
A new approach to back contacting CdTe solar cells that uses an organic poly(3-hexythiophene-2,5-diyl) (P3HT) back contact layer… 
Review
2015
Review
2015
High-K materials and metal gates for CMOS applications
Highly Cited
2012
Highly Cited
2012
Design Methodology for Dual-Band Doherty Power Amplifier With Performance Enhancement Using Dual-Band Offset Lines
This paper proposes a design methodology for dual-band Doherty power amplifier (DPA) with performance enhancement using dual-band… 
Highly Cited
2009
Highly Cited
2009
Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active regions for lasers and light emitting… 
Highly Cited
2007
Highly Cited
2007
Valence band anticrossing in GaBixAs1−x
The optical properties of GaBixAs1-x (0.04< x< 0.08) grown by molecular beam epitaxy have been studied by photomodulated… 
Review
2006
Review
2006
Reliability and performance limitations in SiC power devices
  • R. Singh
  • Microelectron. Reliab.
  • 2006
  • Corpus ID: 14321829
Highly Cited
2005
Highly Cited
2005
Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier
First-principles calculations of model grain boundaries (GBs) in CuInSe2 and CaGaSe2 show that cation-terminated GBs have a… 
Highly Cited
2002
Highly Cited
2002
Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry
A far ultraviolet (UV) spectroscopic ellipsometer system working up to 9 eV has been developed, and applied to characterize high… 
Review
1996
Review
1996
Heterojunction band offset engineering
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