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Band offset

Band offset describes the relative alignment of the energy bands at a semiconductor heterojunction.
Wikipedia

Related topics

Related topics

2 relations
Anderson's ruleHeterojunction

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2018
2018
Band Gap and Band Offset of Ga2O3 and (AlxGa1−x)2O3 Alloys
The band gaps and band offsets of the transparent conducting oxides Ga${}_{2}$O${}_{3}$ and (Al${}_{x}$Ga${}_{1\ensuremath{-}x… Expand
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Highly Cited
2017
Highly Cited
2017
Solar Energy Materials and Solar Cells
A new approach to back contacting CdTe solar cells that uses an organic poly(3-hexythiophene-2,5-diyl) (P3HT) back contact layer… Expand
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Highly Cited
2012
Highly Cited
2012
Design Methodology for Dual-Band Doherty Power Amplifier With Performance Enhancement Using Dual-Band Offset Lines
This paper proposes a design methodology for dual-band Doherty power amplifier (DPA) with performance enhancement using dual-band… Expand
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Highly Cited
2009
Highly Cited
2009
X-ray photoelectron spectroscopy measurement of n-ZnO/p-NiO heterostructure valence-band offset
Valence-band offset (VBO) of n-ZnO/p-NiO heterojunction has been investigated by x-ray photoelectron spectroscopy. Core levels of… Expand
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Highly Cited
2009
Highly Cited
2009
Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes
Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active regions for lasers and light emitting… Expand
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Highly Cited
2008
Highly Cited
2008
InN/GaN valence band offset : high-resolution x-ray photoemission spectroscopy measurements
High-resolution x-ray photoemission spectroscopy measurements are used to determine the valence band offset of wurtzite-InN/GaN… Expand
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Highly Cited
2007
Highly Cited
2007
Valence band anticrossing in GaBixAs1−x
The optical properties of GaBixAs1-x (0.04< x< 0.08) grown by molecular beam epitaxy have been studied by photomodulated… Expand
Highly Cited
2007
Highly Cited
2007
Valence band offset of InN∕AlN heterojunctions measured by x-ray photoelectron spectroscopy
X-ray photoelectron spectroscopy has been used to measure the valence band offset of the InN/BaTiO3 heterojunction. It is found… Expand
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Highly Cited
2002
Highly Cited
2002
Dielectric functions and optical bandgaps of high-K dielectrics for metal-oxide-semiconductor field-effect transistors by far ultraviolet spectroscopic ellipsometry
A far ultraviolet (UV) spectroscopic ellipsometer system working up to 9 eV has been developed, and applied to characterize high… Expand
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Highly Cited
2000
Highly Cited
2000
Fowler–Nordheim hole tunneling in p-SiC/SiO2 structures
We report the confirmed occurrence of Fowler–Nordheim hole tunneling in p-4H–SiC metal-oxide-semiconductor capacitor structures… Expand
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