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Band offset

Band offset describes the relative alignment of the energy bands at a semiconductor heterojunction.
Wikipedia

Related topics

Related topics

2 relations
Anderson's ruleHeterojunction

Papers overview

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Review
2015
Review
2015
High-K materials and metal gates for CMOS applications
Abstract The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a… Expand
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Highly Cited
2013
Highly Cited
2013
Band offsets and heterostructures of two-dimensional semiconductors
The band offsets and heterostructures of monolayer and few-layer transition-metal dichalcogenides MX2 (M = Mo, W; X = S, Se, Te… Expand
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Highly Cited
2013
Highly Cited
2013
Enhancing the efficiency of SnS solar cells via band-offset engineering with a zinc oxysulfide buffer layer
SnS is a promising earth-abundant material for photovoltaic applications. Heterojuction solar cells were made by vapor deposition… Expand
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Highly Cited
2012
Highly Cited
2012
Design Methodology for Dual-Band Doherty Power Amplifier With Performance Enhancement Using Dual-Band Offset Lines
This paper proposes a design methodology for dual-band Doherty power amplifier (DPA) with performance enhancement using dual-band… Expand
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2012
2012
Effect of electric field on the band structure of graphene/boron nitride and boron nitride/boron nitride bilayers
Effect of electric field on the band structures of graphene/boron nitride (BN) and BN/BN bilayers is investigated within the… Expand
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2007
2007
Valence band anticrossing in GaBixAs1−x
The optical properties of GaBixAs1-x (0.04< x< 0.08) grown by molecular beam epitaxy have been studied by photomodulated… Expand
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2005
2005
Compositionally induced valence-band offset at the grain boundary of polycrystalline chalcopyrites creates a hole barrier
First-principles calculations of model grain boundaries (GBs) in CuInSe2 and CaGaSe2 show that cation-terminated GBs have a… Expand
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2004
2004
Measurement of polarization charge and conduction-band offset at InxGa1−xN/GaN heterojunction interfaces
The spontaneous and piezoelectric polarization fields in group-III nitride semiconductors lead to the presence of large… Expand
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2003
2003
Band offset induced threshold variation in strained-Si nMOSFETs
Due to the offset in the valence band, strained-Si nMOSFETs exhibit a -100 mV threshold shift and 4% degradation of the… Expand
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Review
1996
Review
1996
Heterojunction band offset engineering
Abstract Control of band discontinuities in semiconductor heterostructures may introduce a new important degree of freedom in the… Expand
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