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Band offset
Band offset describes the relative alignment of the energy bands at a semiconductor heterojunction.
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Related topics
Related topics
2 relations
Anderson's rule
Heterojunction
Papers overview
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2014
2014
EFFECT OF N-TYPE TRANSITION METAL DICHALCOGENIDE MOLYBDENUM TELLURIDE ( N-MoTe 2 ) IN BACK CONTACT INTERFACE OF CADMIUM TELLURIDE SOLAR CELLS FROM NUMERICAL ANALYSIS
N. Dhara
,
T. CHOWDHURYa
,
+7 authors
N. Amina
2014
Corpus ID: 54069982
N. DHAR, T. H. CHOWDHURY, M. A. ISLAM, N. A. KHAN, M. J. RASHID, M. M. ALAM, Z. A. ALOTHMAN, K. SOPIAN, N. AMIN. Solar Energy…
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2013
2013
Physical Properties of CrSb/InP(001): Effect of Interface in Half-Metallic
A. Boochani
,
S. Solymani
,
S. Rezaee
,
N. B. Nezafat
,
S. Tadayon
,
Amin Aminian
2013
Corpus ID: 73691126
In this study, density functional theory in improved flat waves’ framework has been used. First of all, characterization, elastic…
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2010
2010
Effect of oxygen in the effective work function of Pt / HfO 2 .
Y. C. Quintero
2010
Corpus ID: 119071495
Metal-oxide interfaces are important for many applications such as catalysis, oxidation resistant metals, vacuum seals, thermal…
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2005
2005
Why Does Ga Addition to CIS Limit Its Cell Performance: The Amazing Physics of Grain-Boundaries and Killer-Defects in Chalcopyrites
A. Zunger
2005
Corpus ID: 54046293
New theoretical studies reveal the way that grain boundaries lead to a reduction in electron-hole recombination in CIS, and how…
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2005
2005
A Study of MIS - AlGaN/GaN HEMTs with SiO/sub 2/ Films as Gate Insulator
M. Sugimoto
,
M. Kodama
,
Narumasa Soejima
,
E. Hayashi
,
T. Uesugi
,
Tetsu Kachi
Proceedings. ISPSD '05. The 17th International…
2005
Corpus ID: 12799360
Gate insulator formation methods for GaN based MIS-HEMTs were examined. A SiO2 film formed with the HTO deposition method (HTO…
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1997
1997
Band discontinuities in zinc-blende and wurtzite AlN/SiC heterostructures
Philippe Ferrara
,
N. Binggeli
,
A. Baldereschi
1997
Corpus ID: 9236624
The AlN/SiC band discontinuities in zinc-blende ~110!, ~111!, and wurtzite ~0001! heterostructures were examined using the ab…
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1997
1997
Band structure and confined energy levels of the Si3N4/Si/GaAs system
Zhi Chen
,
S. Mohammad
,
Dae-gyu Park
,
D. Diatezua
,
H. Morkoç
,
Yia-Chung Chang
1997
Corpus ID: 16721478
The band structure of strained Si (4–10 ML) on (001) GaAs, band lineups of the strained Si/(001)GaAs heterojunction, and confined…
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1994
1994
Schottky barrier heights of Pt and Ir silicides formed on Si/SiGe measured by internal photoemission
J. Jimenez
,
X. Xiao
,
J. Sturm
,
P. Pellegrini
,
M. Weeks
1994
Corpus ID: 16173054
Lowered‐barrier‐height silicide Schottky diodes are desirable for obtaining longer cutoff‐wave‐ length Si‐based infrared…
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1992
1992
Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport
A. Levi
,
B. Jalali
,
R. Nottenburg
,
A. Cho
1992
Corpus ID: 17254655
We experimentally measure a departure from conventional scaling of current gain β with base thickness xB in abrupt junction n‐p‐n…
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1979
1979
Synthetic aperture radar/LANDSAT MSS image registration
H. Maurer
,
J. Oberholtzer
,
P. Anuta
1979
Corpus ID: 59168600
Algorithms and procedures necessary to merge aircraft synthetic aperture radar (SAR) and LANDSAT multispectral scanner (MSS…
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