Skip to search formSkip to main contentSkip to account menu

Band offset

Band offset describes the relative alignment of the energy bands at a semiconductor heterojunction.
Wikipedia (opens in a new tab)

Related topics

Related topics

2 relations
Anderson's ruleHeterojunction

Papers overview

Semantic Scholar uses AI to extract papers important to this topic.
2013
2013
Subband splitting and surface roughness induced spin relaxation in (0 0 1) silicon SOI MOSFETs
2013
2013
Quantum-Dot-Based Mid-IR Single-Photon Detector With Self-Quenching and Self-Recovering Operation
A single-photon detector based on an avalanche quantum dot IR photodetector is presented and designed for self-quenching and self… 
2012
2012
Band alignment and electronic structure of the anatase TiO2/SrTiO3(001) heterostructure integrated on Si(001)
Using density functional theory (DFT), scanning transmission electron microscopy (STEM), and electron energy loss spectroscopy… 
2011
2011
NBTI reliability on high-k metal-gate SiGe transistor and circuit performances
2008
2008
Effects of Lateral Diffusion on the Temperature Sensitivity of the Threshold Current for 1.3-$\mu{\hbox {m}}$ Double Quantum-Well GaInNAs–GaAs Lasers
We present an experimental and theoretical investigation of the temperature dependence of the threshold current for double… 
2005
2005
Terahertz absorption in AlGaAs films and detection using heterojunctions
2003
2003
Photoionization of individual CdSe/CdS core/shell nanocrystals on silicon with 2-nm oxide depends on surface band bending
CdSe/CdS nanocrystals are studied by electrostatic force microscopy (EFM) on n- and p-type silicon with 2-nm surface oxide and… 
2002
2002
Comparison of 1300 nm quantum well lasers using different material systems
The band structure and material gain are calculated for 1300-nm band quantum well lasers of GaInNAs, AlGaInAs and GaInAsP… 
1992
1992
Vertical scaling in heterojunction bipolar transistors with nonequilibrium base transport
We experimentally measure a departure from conventional scaling of current gain β with base thickness xB in abrupt junction n‐p‐n… 
1986
1986
Defective Heterojunction Models
By clicking accept or continuing to use the site, you agree to the terms outlined in our Privacy Policy (opens in a new tab), Terms of Service (opens in a new tab), and Dataset License (opens in a new tab)